TY  - JOUR
A1  - Shamim, Saquib
A1  - Mahapatra, S.
A1  - Scappucci, G.
A1  - Klesse, W. M.
A1  - Simmons, M. Y.
A1  - Ghosh, Arindam
T1  - Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si: P and Ge: P δ-layers
T2  - Scientific Reports
N2  - We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10\(^{18}\)m\(^{−2}\)) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.
KW  - two-dimensional materials
KW  - quantum information
KW  - electronic properties and materials
Y1  - 2017
UR  - https://opus.bibliothek.uni-wuerzburg.de/frontdoor/index/index/docId/17093
UR  - https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-170934
VL  - 7
IS  - 46670
ER  -