TY - JOUR A1 - Xu, Shanjia A1 - Sheng, Xinqing A1 - Greiner, P. A1 - Becker, Charles R. A1 - Geick, R. T1 - High-order finite-element analysis of scattering properties of II-VI semiconductor materials N2 - The sattering characteristics ot the n-VI semiconductors were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avolds the difficulty of solving the complex transcendental equation introduced in the multimode network method and calculates all the eigenvalues and eigenfunctions simultaneously which are needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and tbe network method. Very good agreement has been achieved, the accuracy and efficiency of the present method are thus verified. KW - Halbleiter KW - II-VI semiconductor KW - scattering characteristics KW - high-order finite element KW - mode matching method Y1 - 1994 UR - https://opus.bibliothek.uni-wuerzburg.de/frontdoor/index/index/docId/7154 UR - https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-86283 ER -