TY  - JOUR
A1  - Astakhov, Georgy V.
A1  - Fuchs, F.
A1  - Soltamov, V. A.
A1  - Väth, S.
A1  - Baranov, P. G.
A1  - Mokhov, E. N.
A1  - Dyakonov, V.
T1  - Silicon carbide light-emitting diode as a prospective room temperature source for single photons
T2  - Scientific Reports
N2  - Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.
KW  - semiconductors
KW  - inorganic LEDs
KW  - quantum optics
KW  - nanophotonics
KW  - plasmonics
Y1  - 2013
UR  - https://opus.bibliothek.uni-wuerzburg.de/frontdoor/index/index/docId/9630
UR  - https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-96308
ER  -