TY  - JOUR
A1  - Motyka, M.
A1  - Dyksik, M.
A1  - Ryczko, K.
A1  - Weih, R.
A1  - Dallner, M.
A1  - Höfling, S.
A1  - Kamp, M.
A1  - Sęk, G.
A1  - Misiewicz, J.
T1  - Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
T2  - Applied Physics Letters
N2  - Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.
KW  - modulation spectroscopy
KW  - semiconductors
KW  - Type-II quantum well
KW  - interband cascade laser
KW  - GaAsSb
Y1  - 2016
UR  - https://opus.bibliothek.uni-wuerzburg.de/frontdoor/index/index/docId/18979
UR  - https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-189795
VL  - 108
IS  - 10
ER  -