@phdthesis{Fijalkowski2022,
  author    = {Fijalkowski, Kajetan Maciej},
  title     = {Electronic Transport in a Magnetic Topological Insulator (V,Bi,Sb)\(_2\)Te\(_3\)},
  doi       = {10.25972/OPUS-28230},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-282303},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2022},
  abstract  = {This thesis focuses on investigating magneto-transport properties of a ferromagnetic topological insulator (V,Bi,Sb)2Te3. This material is most famously known for exhibiting the quantum anomalous Hall effect, a novel quantum state of matter that has opened up possibilities for potential applications in quantum metrology as a quantum standard of resistance, as well as for academic investigations into unusual magnetic properties and axion electrodynamics. All of those aspects are investigated in the thesis.},
  subject      = {Topologischer Isolator},
  language  = {en}
}
@article{FornariRapplMorelhaoetal.2016,
  author    = {Fornari, C. I. and Rappl, P. H. O. and Morelhao, S. L. and Peixoto, T. R. F. and Bentmann, H. and Reinert, F. and Abramof, E.},
  title     = {Preservation of pristine Bi\(_2\)Te\(_3\) thin film topological insulator surface after ex situ mechanical removal of Te capping layer},
  series = {APL Materials},
  volume    = {4},
  journal   = {APL Materials},
  doi       = {10.1063/1.4964610},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-164468},
  pages     = {106107},
  year      = {2016},
  abstract  = {Ex situ analyses on topological insulator films require protection against surface contamination during air exposure. This work reports on a technique that combines deposition of protective capping just after epitaxial growth and its mechanical removal inside ultra-high vacuum systems. This method was applied to Bi2Te3 films with thickness varying from 8 to 170 nm. Contrarily to other methods, this technique does not require any sputtering or thermal annealing setups installed inside the analyzing system and preserves both film thickness and surface characteristics. These results suggest that the technique presented here can be expanded to other topological insulator materials.},
  language  = {en}
}