@article{HeStolteBurschkaetal.2015,
  author    = {He, Tao and Stolte, Matthias and Burschka, Christian and Hansen, Nis Hauke and Musiol, Thomas and K{\"a}lblein, Daniel and Pflaum, Jens and Tao, Xutang and Brill, Jochen and W{\"u}rthner, Frank},
  title     = {Single-crystal field-effect transistors of new Cl\(_{2}\)-NDI polymorph processed by sublimation in air},
  series = {Nature Communications},
  volume    = {6},
  journal   = {Nature Communications},
  number    = {5954},
  doi       = {10.1038/ncomms6954},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-149255},
  year      = {2015},
  abstract  = {Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-film transistors by sublimation of 2,6-dichloro-naphthalene diimide in air. Under these conditions, a new polymorph with two-dimensional brick-wall packing mode (\(\beta\)-phase) is obtained that is distinguished from the previously reported herringbone packing motif obtained from solution (\(\alpha\)-phase). We are able to fabricate single-crystal field-effect transistors with electron mobilities in air of up to 8.6 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\) (\(\alpha\)-phase) and up to 3.5 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\) (\(\beta\)-phase) on n-octadecyltriethoxysilane-modified substrates. On silicon dioxide, thin-film devices based on \(\beta\)-phase can be manufactured in air giving rise to electron mobilities of 0.37 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\). The simple crystal and thin-film growth procedures by sublimation under ambient conditions avoid elaborate substrate modifications and costly vacuum equipment-based fabrication steps.},
  language  = {en}
}