@article{ShanjiaXinzhangGreineretal.1992,
  author    = {Shanjia, Xu and Xinzhang, Wu and Greiner, P. and Becker, Charles R. and Geick, R.},
  title     = {Microwave transmission and reflection of stratified lossy dielectric segments partially filled waveguide},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37958},
  year      = {1992},
  abstract  = {The microwave transmission and reßection is evaluated for stratified lossy dielectric segments partially filling the rectangular waveguide by the method which combines the multimode network theory with the rigorous mode matching procedure. As an example, we investigate in detail the microwave scattering properties of II-VI-epitaxial layer on a lossy dielectric substrate inserted in the rectangular waveguide. The experimental data verify the accuracy and the effectiveness of the present method. Extensive numerical results are presented to establish useful guidelines for the contactless microwave measurement of the conductivity of the epitaxiallayer.},
  language  = {en}
}
@article{ShanjiaXinzhangBoegeetal.1993,
  author    = {Shanjia, Xu and Xinzhang, Wu and Boege, P. and Sch{\"a}fer, H. and Becker, Charles R. and Geick, R.},
  title     = {Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37964},
  year      = {1993},
  abstract  = {No abstract available},
  language  = {en}
}
@inproceedings{BoegeSchaeferShanjiaetal.1994,
  author    = {Boege, P. and Sch{\"a}fer, H. and Shanjia, Xu and Xinzhang, Wu and Einfeldt, S. and Becker, Charles R. and Hommel, D. and Geick, R.},
  title     = {Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37763},
  year      = {1994},
  abstract  = {Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.},
  subject      = {Millimeterwelle},
  language  = {en}
}