@phdthesis{Gruene2022,
  author    = {Gr{\"u}ne, Marvin},
  title     = {Solid-state NMR Spectroscopic, X-Ray Diffraction and Quantum Chemical Investigations of the Crystalline Cancer Drug Paclitaxel and Paclitaxel incorporated into Polymer Micelles},
  doi       = {10.25972/OPUS-23719},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-237199},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2022},
  abstract  = {Paclitaxel (PTX) is one of the leading drugs against breast and ovarian cancer. Due to its low solubility, treatment of the patients with this drug requires a very well-suited combination with a soluble pharmaceutical excipient to increase the bioavailability and reduce the strong side ef-fects. One efficient way to achieve this in the future could be the incorporation of PTX into pol-ymeric micelles composed of poly(2-oxazoline) based triblock copolymers (POL) which ena-bles PTX loadings of up to 50 wt.\%. However, structural information at an atomic level and thus the knowledge of interaction sites within these promising but complex PTX-POL formula-tions were not yet available. Such results could support the future development of improved excipients for PTX and suitable excipients for other pharmaceutical drugs. Therefore, a solid-state MAS NMR investigation of these amorphous formulations with different POL-PTX com-positions was performed in this thesis as this gives insights of the local structure at an atomic level in its solid state. NMR in solution showed very broad 13C signals of PTX for this system due to the reduced mobility of the incorporated drug which exclude this as an analytical meth-od. In a first study, crystalline PTX was structurally characterized by solid-state NMR as no com-plete 13C spectrum assignment and no 1H NMR data existed for the solid state. In addition, the asymmetric unit of the PTX crystal structure consists of two molecules (Z'=2) that can only be investigated in its solid state. As crystalline PTX in total has about 100 different 13C and 1H chemical shifts with very small differences due to Z'=2, and furthermore, its unit cell consisting of more than 900 atoms, accompanying GIPAW (CASTEP) calculations were required for NMR signal assignments. These calculations were performed using the first three available purely hydrous and anhydrous PTX structures, which were determined by XRD and published by Vel-la-Zarb et al. in 2013. Within this thesis, is was discovered that two investigated batches of commercially available PTX from the same supplier both contained an identical and so far un-known PTX phase that was elucidated by PXRD as well as solid-state NMR data. One of the two batches consists of an additional phase that was shown to be very similar to a known hy-drated phase published in 2013.[1] By heating the batch with the mixture of the two phases un-der vacuum, it is transformed completely to the new dry phase occurring in both PTX batches. Since the drying conditions to obtain anhydrous PTX in-situ on the PXRD setup described by Vella-Zarb et. al.[1] were much softer than ours, we identify our dry phase as a relaxed version of their published anhydrate structure. The PXRD data of the new anhydrate phase was trans-ferred into a new structural model, which currently undergoes geometry optimization. Based on solid-state NMR data at MAS spinning frequencies up to 100 kHz, a 13C and a partial 1H signal assignment for the new anhydrous structure were achieved. These results provided sufficient structural information for further investigations of the micellar POL-PTX system. In a second study, the applicability and benefit of two-dimensional solid-state 14N-1H HMQC MAS NMR spectra for the characterization of amorphous POL-PTX formulations was investi-gated. The mentioned technique has never been applied to a system of similar complexity be-fore and was chosen because around 84\% of the small-molecule drugs contain at least one nitrogen atom. In addition, the number of nitrogen atoms in both POL and PTX is much smaller than the number of carbons or hydrogens, which significantly reduces the spectral complexity. 14N has a natural abundance of 99.6\% but leads to quadrupolar broadening due to its nuclear spin quantum number I = 1. While this is usually undesirable due to broadening in the resulting 1D 14N NMR spectra, this effect is explicitly used in the 2D 14N-1H HMQC MAS experiment. The indirect 14N measurement can avoid the broadening while maintaining the advantage of the high natural abundance and making use of the much more dispersed signals due to the additional quadrupolar shifts as compared to 15N. This measurement method could be successfully applied to the complex amorphous POL-PTX mixtures. With increasing PTX loading of the formulations, additional peaks arise as spatial proximities of the amide nitrogens of POL to NH or OH groups of PTX. In addition, the 14N quadrupolar shift of these amide nitrogens decreases with increasing PTX content indicating a more symmetric nitrogen environment. The latter can be explained by a transformation of the trigonal planar coordination of the tertiary amide nitrogen atoms in pure POL towards a more tetrahedral environment upon PTX loading induced by the formation of hydrogen bonds with NH/OH groups of PTX. In the third and last project, the results of the two abovementioned studies were used and ex-tended by solid state 13C and two-dimensional 1H-13C as well as 1H-1H MAS NMR data with the aim to derive a structural model of the POL-PTX formulations at an atomic level. The knowledge of the NMR signal assignments for crystalline PTX was transferred to amorphous PTX (present in the micelles of the formulations). The 13C solid-state NMR signals were evalu-ated concerning changes in chemical shifts and full widths of half maximum (FWHM) for the different PTX loadings. In this way, the required information about possible interaction sites at an atomic level becomes available. Due to the complexity of these systems, such proximities often cannot be assigned to special atoms, but more to groups of atoms, as the individual de-velopments of line widths and line shifts are mutually dependent. An advantageous aspect for this analysis was that pure POL already forms unloaded micelles. The evaluation of the data showed that the terminal phenyl groups of PTX seem to be most involved in the interaction by the establishment of the micelle for lowest drug loading and that they are likely to react to the change in the amount of PTX molecules as well. For the incorporation of PTX in the micelles, the following model could be obtained: For lowest drug loading, PTX is mainly located in the inner part of the micelles. Upon further increasing of the loading, it progressively extends to-ward the micellar shell. This could be well shown by the increasing interactions of the hydro-phobic butyl chain of POL and PTX, proceeding in the direction of the polymer backbone with rising drug load. Furthermore, due to the size of PTX and the hydrodynamic radius of the mi-celles, even at the lowest loading, the PTX molecules partially reach the core-shell interface of the micelle. Upon increasing the drug loading, the surface coverage with PTX clusters increas-es based on the obtained model approach. The latter result is supported by DLS and SANS data of this system. The abovementioned results of the 14N-1H HMQC MAS investigation of the POL-PTX formulations support the outlined model. As an outlook, the currently running geometry optimization and subsequently scheduled calcu-lation of the chemical shieldings of the newly obtained anhydrous PTX crystal structure can further improve the solid-state NMR characterization through determination of further spatial proximities among protons using the existing 2D 1H(DQ)-1H(SQ) solid-state MAS NMR spec-trum at 100 kHz rotor spinning frequency. The 2D 14N-1H HMQC MAS NMR experiments were shown to have great potential as a technique for the analysis of other disordered and amor-phous drug delivery systems as well. The results of this thesis should be subsequently applied to other micellar systems with varying pharmaceutical excipients or active ingredients with the goal of systematically achieving higher drug loadings (e.g., for the investigated PTX, the similar drug docetaxel or even different natural products). Additionally, it is planned to transfer the knowledge to another complex polymer system containing poly(amino acids) which offers hy-drogen bonding donor sites for additional intermolecular interactions. Currently, the POL-PTX system is investigated by further SANS studies that may provide another puzzle piece to the model as complementary measurement method in the future. In addition, the use of MD simu-lations might be considered in the future. This would allow a computerized linking of the differ-ent pieces of information with the aim to determine the most likely model.},
  subject      = {Wirkstoff-Tr{\"a}ger-System},
  language  = {en}
}
@phdthesis{Trabel2019,
  author    = {Trabel, Mirko},
  title     = {Growth and Characterization of Epitaxial Manganese Silicide Thin Films},
  doi       = {10.25972/OPUS-18472},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-184720},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2019},
  abstract  = {This thesis describes the growth and characterization of epitaxial MnSi thin films on Si substrates. The interest in this material system stems from the rich magnetic phase diagram resulting from the noncentrosymmetric B20 crystal structure. Here neighboring spins prefer a tilted relative arrangement in contrast to ferro- and antiferromagnets, which leads to a helical ground state where crystal and spin helix chirality are linked [IEM+85]. This link makes the characterization and control of the crystal chirality the main goal of this thesis. After a brief description of the material properties and applied methods, the thesis itself is divided into four main parts. In the first part the advancement of the MBE growth process of MnSi on Si\((111)\) substrate as well as the fundamental structural characterization are described. Here the improvement of the substrate interface by an adjusted substrate preparation process is demonstrated, which is the basis for well ordered flat MnSi layers. On this foundation the influence of Mn/Si flux ratio and substrate temperature on the MnSi layer growth is investigated via XRD and clear boundaries to identify the optimal growth conditions are determined. The nonstoichiometric phases outside of this optimal growth window are identified as HMS and Mn\(_5\)Si\(_3\). Additionally, a regime at high substrate temperatures and low Mn flux is discovered, where MnSi islands are growing incorporated in a Si layer, which could be interesting for further investigations as a size confinement can change the magnetic phase diagram [DBS+18]. XRD measurements demonstrate the homogeneity of the grown MnSi layers over most of the 3 inch wafer diameter and a small \(\omega\)-FWHM of about 0.02° demonstrates the high quality of the layers. XRD and TEM measurements also show that relaxation of the layers happens via misfit dislocations at the interface to the substrate. The second part of the thesis is concerned with the crystal chirality. Here azimuthal \(\phi\)-scans of asymmetric XRD reflections reveal twin domains with a \(\pm\)30° rotation to the substrate. These twin domains seem to consist of left and right-handed MnSi, which are connected by a mirror operation at the \((\bar{1}10)\) plane. For some of the asymmetric XRD reflections this results in different intensities for the different twin domains, which reveals that one of the domains is rotated +30° and the other is rotated -30°. From XRD and TEM measurements an equal volume fraction of both domains is deduced. Different mechanisms to suppress these twin domains are investigated and successfully achieved with the growth on chiral Si surfaces, namely Si\((321)\) and Si\((531)\). Azimuthal \(\phi\)-scans of asymmetric XRD reflections demonstrate a suppression of up to 92\%. The successful twin suppression is an important step in the use of MnSi for the proposed spintronics applications with skyrmions as information carriers, as discussed in the introduction. Because of this achievement, the third part of the thesis on the magnetic properties of the MnSi thin films is not only concerned with the principal behavior, but also with the difference between twinned and twin suppressed layers. Magnetometry measurements are used to demonstrate, that the MnSi layers behave principally as expected from the literature. The analysis of saturation and residual magnetization hints to the twin suppression on Si\((321)\) and Si\((531)\) substrates and further investigations with more samples can complete this picture. For comparable layers on Si\((111)\), Si\((321)\) and Si\((531)\) the Curie-Weiss temperature is identical within 1 K and the critical field within 0.1 T. Temperature dependent magnetoresistivity measurements also demonstrate the expected \(T^2\) behavior not only on Si\((111)\) but also on Si\((321)\) substrates. This demonstrates the successful growth of MnSi on Si\((321)\) and Si\((531)\) substrates. The latter measurements also reveal a residual resistivity of less then half for MnSi on Si\((321)\) in comparison to Si\((111)\). This can be explained with the reduced number of domain boundaries demonstrating the successful suppression of one of the twin domains. The homogeneity of the residual resistivity as well as the charge carrier density over a wide area of the Si\((111)\) wafer is also demonstrated with these measurements as well as Hall effect measurements. The fourth part shows the AMR and PHE of MnSi depending on the angle between in plane current and magnetic field direction with respect to the crystal direction. This was proposed as a tool to identify skyrmions [YKT+15]. The influence of the higher C\(_{3\mathrm{v}}\) symmetry of the twinned system instead of the C\(_3\) symmetry of a B20 single crystal is demonstrated. The difference could serve as a useful additional tool to prove the twin suppression on the chiral substrates. But this is only possible for rotations with specific symmetry surfaces and not for the studied unsymmetrical Si\((321)\) surface. Measurements for MnSi layers on Si\((111)\) above the critical magnetic field demonstrate the attenuation of AMR and PHE parameters for increasing resistivity, as expected from literature [WC67]. Even if a direct comparison to the parameters on Si\((321)\) is not possible, the higher values of the parameters on Si\((321)\) can be explained considering the reduced charge carrier scattering from domain boundaries. Below the critical magnetic field, which would be the region where a skyrmion lattice could be expected, magnetic hysteresis complicates the analysis. Only one phase transition at the critical magnetic field can be clearly observed, which leaves the existence of a skyrmion lattice in thin epitaxial MnSi layers open. The best method to solve this question seems to be a more direct approach in the form of Lorentz-TEM, which was also successfully used to visualize the skyrmion lattice for thin plates of bulk MnSi [TYY+12]. For the detection of in plane skyrmions, lamellas would have to be prepared for a side view, which seems in principle possible. The demonstrated successful twin suppression for MnSi on Si\((321)\) and Si\((531)\) substrates may also be applied to other material systems. Suppressing the twinning in FeGe on Si\((111)\) would lead to a single chirality skyrmion lattice near room temperature [HC12]. This could bring the application of skyrmions as information carriers in spintronics within reach. Glossary: MBE Molecular Beam Epitaxy XRD X-Ray Diffraction HMS Higher Manganese Silicide FWHM Full Width Half Maximum TEM Tunneling Electron Microscopy AMR Anisotropic MagnetoResistance PHE Planar Hall Effect Bibliography: [IEM+85] M. Ishida, Y. Endoh, S. Mitsuda, Y. Ishikawa, and M. Tanaka. Crystal Chirality and Helicity of the Helical Spin Density Wave in MnSi. II. Polarized Neutron Diffraction. Journal of the Physical Society of Japan, 54(8):2975, 1985. [DBS+18] B. Das, B. Balasubramanian, R. Skomski, P. Mukherjee, S. R. Valloppilly, G. C. Hadjipanayis, and D. J. Sellmyer. Effect of size confinement on skyrmionic properties of MnSi nanomagnets. Nanoscale, 10(20):9504, 2018. [YKT+15] T. Yokouchi, N. Kanazawa, A. Tsukazaki, Y. Kozuka, A. Kikkawa, Y. Taguchi, M. Kawasaki, M. Ichikawa, F. Kagawa, and Y. Tokura. Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect. Journal of the Physical Society of Japan, 84(10):104708, 2015. [WC67] R. H. Walden and R. F. Cotellessa. Magnetoresistance of Nickel-Copper Single-Crystal Thin Films. Journal of Applied Physics, 38(3):1335, 1967. [TYY+12] A. Tonomura, X. Yu, K. Yanagisawa, T. Matsuda, Y. Onose, N. Kanazawa, H. S. Park, and Y. Tokura. Real-Space Observation of Skyrmion Lattice in Helimagnet MnSi Thin Samples. Nano Letters, 12(3):1673, 2012. [HC12] S. X. Huang and C. L. Chien. Extended Skyrmion Phase in Epitaxial FeGe(111) Thin Films. Physical Review Letters, 108(26):267201, 2012.},
  subject      = {Molekularstrahlepitaxie},
  language  = {en}
}
@phdthesis{Lochner2011,
  author    = {Lochner, Florian},
  title     = {Epitaxial growth and characterization of NiMnSb layers for novel spintronic devices},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-72276},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2011},
  abstract  = {In dieser Dissertation wurde das epitaktische Wachstum und die Charakterisierung des halb-metallischen Ferromagneten NiMnSb vorgestellt. NiMnSb kristallisiert in der C1b Kristallstruktur, welche {\"a}hnlich der Zinkblendestruktur von h{\"a}ufig verwendeten III-V Halbleitern ist. Eine besondere Eigenschaft von NiMnSb ist die theoretische 100\% Spin-polarisation an der Fermikante, die es zu einem perfekten Kandidaten f{\"u}r Spintronikexperimente macht. Eine weitere große Rolle f{\"u}r diese Arbeit spielten die magnetischen Eigenschaften von NiMnSb, insbesondere die niedrige magnetische D{\"a}mpfung der abgeschiedenen Schichten. Alle gewachsenen Schichten wurden mit der MBE-Technik hergestellt. Die Schichtstapel f{\"u}r alle unterschiedlichen Experimente und Anwendungen wurden auf InP Substrate in (001) oder (111)B Orientierung abgeschieden. Vor der NiMnSb Schicht wurde eine undotierte (In,Ga)As Pufferschicht gewachsen. F{\"u}r einige Proben auf InP(111)B wurde zus{\"a}tzlich eine Si-dotierte (In,Ga)As-Schicht auf die undotierte (In,Ga)As-Schicht gewachsen. Die Dotierungskonzentration der n-dotierenten Schicht wurde per ETCH-CV bestimmt. Alle Schichten wurden auf strukturelle Eigenschaften und die NiMnSb-Schichten zus{\"a}tzlich auf magnetische Eigenschaften untersucht. F{\"u}r die strukturellen Untersuchungen wurde die in-situ Technik RHEED und das ex-situ Werkzeug HRXRD verwendet. Auf beiden Orientierungen zeigten die RHEED-Beobachtungen eine gute Qualit{\"a}t der gewachsenen Puffer- und halb-metallischen Ferromagnetschichten. Dieses Ergebnis wurde durch die HRXRD-Messung best{\"a}rkt. Es konnte die vertikale Gitterkonstante bestimmt werden. Der erhaltene Wert von NiMnSb auf InP(001) a(NiMnSb_vertikal) = 5.925 {\AA} ist in guter {\"U}bereinstimmung mit dem Literaturwert a(NiMnSb_Lit) = 5.903 {\AA}[Cas55]. F{\"u}r NiMnSb auf InP(111)B wurde eine vertikale Gitterkonstante von a(NiMnSb_vertikal) = 6.017 {\AA} bestimmt. Die horizontale Gitterkonstante des Puffers und des halb-metallischen Ferromagneten konnte in guter {\"U}bereinstimmung mit der Substratgitterkonstante bestimmt werden. Allerdings ist dieses Ergebnis ausschließlich bis zu einer Schichtdicke von ≈40nm f{\"u}r NiMnSb g{\"u}ltig. Um diese maximale Schichtdicke zu erh{\"o}hen, wurden NiMnSb auf InP(001) Substrate gewachsen und mit einer Ti/Au-Schicht als Schutz versehen. Mit diesen Proben wurden reziproke Gitterkarten des (533) Reflex mit GIXRD am Synchrotron BW2 des HASYLAB gemessen [Kum07]. Es hat sich gezeigt, dass sich die kritische Schichtdicke mehr als verdopppeln l{\"a}sst, wenn eine Ti/Au- Schicht direkt nach dem Wachstum von NiMnSb abgeschieden wird, ohne das Ultrahochvakuum (UHV) zu verlassen. Die magnetischen Eigenschaften wurden mit FMR Experimenten und SQUID bestimmt. Der gemessene magnetische D{\"a}mpfungsparameter α einer 40nm dicken NiMnSb Schicht auf InP(001) wurde zu 3.19e-3 entlang [1-10] bestimmt. Die resultierende Linienbreite von unseren Schichten auf InP(001) ist mehr als 4.88 mal kleiner als bei [Hei04] gemessen. Ein weiteres Ergebnis ist die Richtungsabh{\"a}ngigkeit der D{\"a}mpfung. Es wurde gemessen, dass die D{\"a}mpfung sich um mehr als 42\% {\"a}ndert, wenn das angelegte Feld um 45° von [1-10] nach [100] gedreht wird. Mit SQUID messten wir die S{\"a}ttigungsmagnetisierung von einer 40nm dicken NiMnSb-Schicht zu 4µB. NiMnSb-Schichten auf InP(111)B Substrate wurden ebenfalls mit FMR untersucht, mit einem {\"u}berraschenden Ergebnis. Diese Schichten zeigten nicht nur eine Abnahme im Anisotropiefeld mit ansteigender Schichtdicke, sondern auch ein uniaxiales Anisotropieverhalten. Dieses Verhalten kann mit Defekten in diesen Proben erkl{\"a}rt werden. Mit einem Rasterkraftmikroskop (AFM) wurden dreieckige Defekte gemessen. Diese Defekte haben ihren Ursprung in der Pufferschicht und beeinflussen die magnetischen Eigenschaften. Ein weiterer Teil dieser Arbeit widmete sich dem Verhalten von NiMnSb bei Temperaturen um die 80K. In unserer Probe konnte ein Phasen{\"u}bergang in den Messdaten des normalen Hall Koeffizienten, anomalen Hall-Term und Leitungswiderstand nicht beobachtet werden. Der letzte Teil dieser Arbeit behandelt verschiedene Spintronikanwendungen, welche aus unseren NiMnSb-Schichten gebaut wurden. In einer ersten Anwendung agiert die Magnetisierung auf einen Strom I. Die so genannte GMR-Anwendung besteht aus InP:S(001)- 180nm undotierten (In,Ga)As - 40nm NiMnSb - 10nm Cu - 6nm NiFe - 10nm Ru in CPP Geomtrie . Wir erhielten ein MR-Verh{\"a}ltnis von 3.4\%. In einer zweiten Anwendung agiert der Strom I auf die Magnetisierung und nutzt dabei das Ph{\"a}nomen des Spin-Drehmomentes aus. Dieser so genannte Spin Torque Oscillator (STO) emittiert Frequenzen im GHz Bereich (13.94GHz - 14.1GHz). Die letzte hergestellte Anwendung basiert auf dem magnetischen Wirbelph{\"a}nomen. F{\"u}r das Umschalten der Kernpolarit{\"a}t sind die gyrotropischen Frequenzen f + = 254MHz, f - = 217MHz und ein totales, statisches magnetisches Feld von nur mµ0H = 65mT n{\"o}tig. Die Umkehreffizienz wurde besser als 99\% bestimmt.},
  subject      = {Nickelverbindungen},
  language  = {en}
}
@phdthesis{Frey2011,
  author    = {Frey, Alexander},
  title     = {Spin-Dependent Tunneling and Heterovalent Heterointerface Effects in Diluted Magnetic II-VI Semiconductor Heterostructures},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-78133},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2011},
  abstract  = {The contribution of the present thesis consists of three parts. They are centered around investigating certain semiconductor heterointerfaces relevant to spin injection, exploring novel, diluted magnetic single barrier tunneling structures, and further developing diluted magnetic II-VI resonant tunneling diodes.},
  subject      = {Zwei-Sechs-Halbleiter},
  language  = {en}
}