@article{SuchomelBrodbeckLiewetal.2017,
  author    = {Suchomel, H. and Brodbeck, S. and Liew, T. C. H. and Amthor, M. and Klaas, M. and Klembt, S. and Kamp, M. and H{\"o}fling, S. and Schneider, C.},
  title     = {Prototype of a bistable polariton field-effect transistor switch},
  series = {Scientific Reports},
  volume    = {7},
  journal   = {Scientific Reports},
  number    = {5114},
  doi       = {10.1038/s41598-017-05277-1},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-158323},
  year      = {2017},
  abstract  = {Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior.},
  language  = {en}
}
@article{ArcaTeddeSrameketal.2013,
  author    = {Arca, Francesco and Tedde, Sandro F. and Sramek, Maria and Rauh, Julia and Lugli, Paolo and Hayden, Oliver},
  title     = {Interface Trap States in Organic Photodiodes},
  series = {Scientific Reports},
  volume    = {3},
  journal   = {Scientific Reports},
  doi       = {10.1038/srep01324},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-131507},
  pages     = {1324},
  year      = {2013},
  abstract  = {Organic semiconductors are attractive for optical sensing applications due to the effortless processing on large active area of several \(cm^2\), which is difficult to achieve with solid-state devices. However, compared to silicon photodiodes, sensitivity and dynamic behavior remain a major challenge with organic sensors. Here, we show that charge trapping phenomena deteriorate the bandwidth of organic photodiodes (OPDs) to a few Hz at low-light levels. We demonstrate that, despite the large OPD capacitances of similar to 10 nF \(cm^{-2}\), a frequency response in the kHz regime can be achieved at light levels as low as 20 nW \(cm^{-2}\) by appropriate interface engineering, which corresponds to a 1000-fold increase compared to state-of-the-art OPDs. Such device characteristics indicate that large active area OPDs are suitable for industrial sensing and even match medical requirements for single X-ray pulse detection in the millisecond range.},
  language  = {en}
}