@phdthesis{Boariu2014,
  author    = {Boariu, Florin Loredan},
  title     = {The "Hidden-Order" Phase Transition of URu2Si2 : Investigated by Angle-Resolved Photoelectron Spectroscopy},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-98259},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2014},
  abstract  = {In 1985, an enigmatic second order phase transition was discovered in the actinide compound URu2Si2. Evading a microscopic description for nearly three decades in spite of numerous experimental and theoretical attempts, the name "hidden order Transition" was adopted for the effect. (...)},
  subject      = {Actinoide},
  language  = {en}
}
@phdthesis{Bradeanu2005,
  author    = {Bradeanu, Ioana Lavinia},
  title     = {Photoionization and excitation of free variable size van der Waals clusters in the inner shell regime},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-16372},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2005},
  abstract  = {The studies presented in this thesis deal with resonant and non-resonant excitation of free variable size clusters using synchrotron radiation in the soft X-ray regime. The post collision interaction (PCI) effect is investigated in free variable size krypton and argon clusters near the Kr 3d and Ar 2p ionization energies. The core ionization energies of surface and bulk sites in variable size clusters can be clearly distinguished. This is mostly due to the polarization screening. It is found that the asymmetry, which is a consequence of PCI, is characteristically smaller for clusters than for isolated atoms. Moreover, there is less asymmetry for bulk sites than for surface sites in variable size rare gas clusters. We assign the results in terms of mechanisms that are based on quantum mechanical models of post collision interaction. Complementary experiments on the photoionization of free van der Waals clusters are performed by using zero kinetic energy (ZEKE) photoelectron spectroscopy in the Ar 2p-, Kr 3d-, Ne 1s-, and N2-regimes. The experimental approach is also suitable to detect cluster size dependent changes in electronic structure. This also allows us to study post collision interaction in variable size clusters. The parameters of the PCI profiles deduced for ZEKE experiments indicate that there are no significant changes in core ionization dynamics compared to near-threshold experiments. Results from model calculations in Kr 3d ionization energy indicate that different geometric sites can be clearly distinguished from each other by their substantial shift in Kr 3d ionization energy, though the dimer shows almost the same Kr 3d ionization energy as the free atom. A comparison with the experimental results indicates that there is resemblance with the model calculations, even though close-lying ionization energies are blended and require deconvolutions of the experimental spectra. It is evident from the present work that one can observe distinct shifts in core ionization energies in van der Waals clusters that are formed in wide size distributions of a jet expansion. The emission of ultraviolet fluorescence radiation from variable size argon clusters is investigated with high spectral resolution in the Ar 2p-excitation regime. The fluorescence excitation spectra reveal strong fluorescence intensity in the Ar 2p-continuum, but no evidence for the occurrence of discrete low-lying core-exciton states in the near-edge regime. This finding is different from the absorption and photoionization cross sections of argon clusters and the solid. The dispersed fluorescence shows a broad molecular band centered near 280 nm. The present results are consistent with the formation of singly charged, excited moieties within the clusters, which are assigned as sources of the radiative relaxation in the 280 nm regime. A fast energy transfer process (interatomic Coulombic decay, ICD) is assigned to be primarily the origin of these singly charged, excited cations besides intra-cluster electron impact ionization by Auger electrons. Our findings give possibly the first experimental evidence for ICD in the core level regime. Free, variable size nitrogen clusters are investigated in the N 1s excitation regime in comparison with the free molecule and solid nitrogen. The conversion of Rydberg states into core excitons, surface and bulk, was studied. The experimental results are simulated by ab initio calculations using (N2)13 as a reasonable prototype cluster structure that allows us to simulate both surface and bulk properties in comparison with the isolated molecule. The present results clearly show that there are specific properties, such as molecular orientation, in molecular van der Waals clusters, which do not exist in atomic van der Waals clusters. It is shown that inner and outer surface sites give rise to distinct energy shifts of the low lying surface core excitons.},
  subject      = {Photoionisation},
  language  = {en}
}
@article{GabelPickemScheidereretal.2022,
  author    = {Gabel, Judith and Pickem, Matthias and Scheiderer, Philipp and Dudy, Lenart and Leikert, Berengar and Fuchs, Marius and St{\"u}binger, Martin and Schmitt, Matthias and K{\"u}spert, Julia and Sangiovanni, Giorgio and Tomczak, Jan M. and Held, Karsten and Lee, Tien-Lin and Claessen, Ralph and Sing, Michael},
  title     = {Toward Functionalized Ultrathin Oxide Films: The Impact of Surface Apical Oxygen},
  series = {Advanced Electronic Materials},
  volume    = {8},
  journal   = {Advanced Electronic Materials},
  number    = {4},
  issn      = {2199-160X},
  doi       = {10.1002/aelm.202101006},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-318914},
  year      = {2022},
  abstract  = {Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO\(_{3}\) as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which are present even if the films are kept in an ultrahigh vacuum environment and not explicitly exposed to air, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or—mutatis mutandis—the specific oxygen configuration imposed by a capping layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.},
  language  = {en}
}
@article{GerlachMonningerSchleieretal.2021,
  author    = {Gerlach, Marius and Monninger, Sophie and Schleier, Domenik and Hemberger, Patrick and Goettel, James T. and Braunschweig, Holger and Fischer, Ingo},
  title     = {Photoelectron Photoion Coincidence Spectroscopy of NCl\(_{3}\) and NCl\(_{2}\)},
  series = {ChemPhysChem},
  volume    = {22},
  journal   = {ChemPhysChem},
  number    = {21},
  doi       = {10.1002/cphc.202100537},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-257322},
  pages     = {2164-2167},
  year      = {2021},
  abstract  = {We investigate NCl\(_{3}\) and the NCl\(_{2}\) radical by photoelectron-photoion coincidence spectroscopy using synchrotron radiation. The mass selected threshold photoelectron spectrum (ms-TPES) of NCl\(_{3}\) is broad and unstructured due to the large geometry change. An ionization energy of 9.7±0.1 eV is estimated from the spectrum and supported by computations. NCl2 is generated by photolysis at 213 nm from NCl\(_{3}\) and its ms-TPES shows an extended vibrational progression with a 90 meV spacing that is assigned to the symmetric N-Cl stretching mode in the cation. An adiabatic ionization energy of 9.94 ± 0.02 eV is determined.},
  language  = {en}
}
@phdthesis{Hauschild2015,
  author    = {Hauschild, Dirk},
  title     = {Electron and soft x-ray spectroscopy of indium sulfide buffer layers and the interfaces in Cu(In,Ga)(S,Se)2-based thin-film solar cells},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-126766},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2015},
  abstract  = {In this thesis, thin-film solar cells on the basis of Cu(In,Ga)(S,Se)2 (CIGSSe) were investigated. Until today, most high efficient CIGSSe-based solar cells use a toxic and wetchemical deposited CdS buffer layer, which doesn't allow a dry inline production. However, a promising and well-performing alternative buffer layer, namely indium sulfide, has been found which doesn't comprise these disadvantages. In order to shed light on these well-performing devices, the surfaces and in particular the interfaces which play a major role for the charge carrier transport are investigated in the framework of this thesis. Both, the chemical and electronic properties of the solar cells' interfaces were characterized. In case of the physical vapor deposition of an InxSy-based buffer layer, the cleaning step of the CdS chemical-bath deposition is not present and thus changes of the absorber surface have to be taken into account. Therefore, adsorbate formation, oxidation, and segregation of absorber elements in dependence of the storing temperature and the humidity are investigated in the first part of this thesis. The efficiencies of CIGSSe-based solar cells with an InxSy buffer layer depend on the nominal indium concentration x and display a maximum for x = 42 \%. In this thesis, InxSy samples with a nominal indium concentration of 40.2\% ≤ x ≤ 43.2\% were investigated by surface-sensitive and surface-near bulk-sensitive techniques, namely with photoemission spectroscopy (PES) and x-ray emission spectroscopy (XES). The surfaces of the films were found to be sulfur-poor and indium-rich in comparison with stoichiometric In2S3. Moreover, a direct determination of the band alignment at the InxSy/CISSe interface in dependence of the nominal indium concentration x was conducted with the help of PES and inverse PES (IPES) and a flat band alignment was found for x = 42 \%. In order to study the impact of a heat treatment as it occurs during subsequent cell process steps, the indium sulfide-buffered absorbers were annealed for 30 minutes under UHV conditions at 200 °C after the initial data set was taken. Besides a reported enhanced solar cell performance, a significant copper diffusion from the absorber into the buffer layer takes place due to the thermal treatment. Accordingly, the impact of the copper diffusion on the hidden InxSy/CISSe interface was discussed and for x = 40.2\% a significant cliff (downwards step in the conduction band) is observed. For increasing x, the alignment in the conduction band turns into a small upwards step (spike) for the region 41\% ≤ x ≤ 43.2\%. This explains the optimal solar cell performance for this indium contents. In a further step, the sodium-doped indium sulfide buffer which leads to significantly higher efficient solar cells was investigated. It was demonstrated by PES/IPES that the enhanced performance can be ascribed to a significant larger surface band gap in comparison with undoped InxSy. The occurring spike in the Na:InxSy/CISSe band alignment gets reduced due to a Se diffusion induced by the thermal treatment. Furthermore, after the thermal treatment the sodium doped indium sulfide layer experiences a copper diffusion which is reduced by more than a factor of two compared to pure InxSy. Next, the interface between the Na:InxSy buffer layer and the i-ZnO (i = intrinsic, non-deliberately doped), as a part of the transparent front contact was analyzed. The i-ZnO/Na:InxSy interface shows significant interdiffusion, leading to the formation of, e.g., ZnS and hence to a reduction of the nominal cliff in the conduction band alignment. In the last part of this thesis, the well-established surface-sensitive reflective electron energy loss spectroscopy (REELS) was utilized to study the CIGSSe absorber, the InxSy buffer, and annealed InxSy buffer surfaces. By fitting the characteristic inelastic scattering cross sections λK(E) with Drude-Lindhard oscillators the dielectric function was identified. The determined dielectric functions are in good agreement with values from bulk-sensitive optical measurements on indium sulfide layers. In contrast, for the chalcopyrite-based absorber significant differences appear. In particular, a substantial larger surface band gap of the CIGSSe surface of E^Ex_Gap = (1.4±0.2) eV in comparison with bulk values is determined. This provides for the first time an independent verification of earlier PES/IPES results. Finally, the electrons' inelastic mean free paths l for the three investigated surfaces are compared for different primary energies with theoretical values and the universal curve.},
  subject      = {Photoelektronenspektroskopie},
  language  = {en}
}
@phdthesis{Hoepfner2012,
  author    = {H{\"o}pfner, Philipp Alexander},
  title     = {Two-Dimensional Electron Systems at Surfaces — Spin-Orbit Interaction and Electronic Correlations},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-78876},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2012},
  abstract  = {This thesis addresses three different realizations of a truly two-dimensional electron system (2DES), established at the surface of elemental semiconductors, i.e., Pt/Si(111), Au/Ge(111), and Sn/Si(111). Characteristic features of atomic structures at surfaces have been studied using scanning tunneling microscopy and low energy electron diffraction with special emphasis on Pt deposition onto Si(111). Topographic inspection reveals that Pt atoms agglomerate as trimers, which represent the structural building block of phase-slip domains. Surprisingly, each trimer is rotated by 30° with respect to the substrate, which results in an unexpected symmetry breaking. In turn, this represents a unique example of a chiral structure at a semiconductor surface, and marks Pt/Si(111) as a promising candidate for catalytic processes at the atomic scale. Spin-orbit interactions (SOIs) play a significant role at surfaces involving heavy adatoms. As a result, a lift of the spin degeneracy in the electronic states, termed as Rashba effect, may be observed. A candidate system to exhibit such physics is Au/Ge(111). Its large hexagonal Fermi sheet is suggested to be spin-split by calculations within the density functional theory. Experimental clarification is obtained by exploiting the unique capabilities of three-dimensional spin detection in spin- and angle-resolved photoelectron spectroscopy. Besides verification of the spin splitting, the in-plane components of the spin are shown to possess helical character, while also a prominent rotation out of this plane is observed along straight sections of the Fermi surface. Surprisingly and for the first time in a 2DES, additional in-plane rotations of the spin are revealed close to high symmetry directions. This complex spin pattern must originate from crystalline anisotropies, and it is best described by augmenting the original Rashba model with higher order Dresselhaus-like SOI terms. The alternative use of group-IV adatoms at a significantly reduced coverage drastically changes the basic properties of a 2DES. Electron localization is strongly enhanced, and the ground state characteristics will be dominated by correlation effects then. Sn/Si(111) is scrutinized with this regard. It serves as an ideal realization of a triangular lattice, that inherently suffers from spin frustration. Consequently, long-range magnetic order is prohibited, and the ground state is assumed to be either a spiral antiferromagnetic (AFM) insulator or a spin liquid. Here, the single-particle spectral function is utilized as a fundamental quantity to address the complex interplay of geometric frustration and electronic correlations. In particular, this is achieved by combining the complementary strengths of ab initio local density approximation (LDA) calculations, state-of-the-art angle-resolved photoelectron spectroscopy, and the sophisticated many-body LDA+DCA. In this way, the evolution of a shadow band and a band backfolding incompatible with a spiral AFM order are unveiled. Moreover, beyond nearest-neighbor hopping processes are crucial here, and the spectral features must be attributed to a collinear AFM ground state, contrary to common expectation for a frustrated spin lattice.},
  subject      = {Halbleiteroberfl{\"a}che},
  language  = {en}
}
@phdthesis{Lutz2018,
  author    = {Lutz, Peter},
  title     = {Surface and Interface Electronic Structure in Ferroelectric BaTiO\(_3\)},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-159057},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2018},
  abstract  = {Transition metal oxides (TMO) represent a highly interesting material class as they exhibit a variety of different emergent phenomena including multiferroicity and superconductivity. These effects result from a significant interplay of charge, spin and orbital degrees of freedom within the correlated d-electrons. Oxygen vacancies (OV) at the surface of certain d0 TMO release free charge carriers and prompt the formation of a two-dimensional electron gas (2DEG). Barium titanate (BaTiO3) is a prototypical and promising d0 TMO. It displays ferroelectricity at room temperature and features several structural phase transitions, from cubic over tetragonal (at room temperature) and orthorhombic to rhombohedral. The spontaneous electric polarization in BaTiO3 can be used to manipulate the physical properties of adjacent materials, e.g. in thin films. Although the macroscopic properties of BaTiO3 are studied in great detail, the microscopic electronic structure at the surface and interface of BaTiO3 is not sufficiently understood yet due to the complex interplay of correlation within the d states, oxygen vacancies at the surface, ferroelectricity in the bulk and the structural phase transitions in BaTiO3. This thesis investigates the electronic structure of different BaTiO3 systems by means of angle-resolved photoelectron spectroscopy (ARPES). The valence band of BaTiO3 single crystals is systematically characterized and compared to theoretical band structure calculations. A finite p-d hybridization of titanium and oxygen states was inferred at the high binding energy side of the valence band. In BaTiO3 thin films, the occurrence of spectral weight near the Fermi level could be linked to a certain amount of OV at the surface which effectively dopes the host system. By a systematic study of the metallic surface states as a function of temperature and partial oxygen pressure, a model was established which reflects the depletion and accumulation of charge carriers at the surface of BaTiO3. An instability at T ~ 285K assumes a volatile behavior of these surface states. The ferroelectricity in BaTiO3 allows a control of the electronic structure at the interface of BaTiO3-based heterostructures. Therefore, the interface electronic structure of Bi/BaTiO3 was studied with respect to the strongly spin-orit coupled states in Bi by also including a thickness dependent characterization. The ARPES results, indeed, confirm the presence of Rashba spin-split electronic states in the bulk band gap of the ferroelectric substrate. By varying the film thickness in Bi/BaTiO3, it was able to modify the energy position and the Fermi vector of the spin-split states. This observation is associated with the appearance of an interface state which was observed for very low film thickness. Both spectral findings suggest a significant coupling between the Bi films and BaTiO3.},
  subject      = {Bariumtitanat},
  language  = {en}
}
@phdthesis{Paul2010,
  author    = {Paul, Markus Christian},
  title     = {Molecular beam epitaxy and properties of magnetite thin films on semiconducting substrates},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-56044},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2010},
  abstract  = {The present thesis is concerned with molecular beam epitaxy of magnetite (Fe3O4) thin films on semiconducting substrates and the characterization of their structural, chemical, electronic, and magnetic properties. Magnetite films could successfully be grown on ZnO substrates with high structural quality and atomically abrupt interfaces. The films are structurally almost completely relaxed exhibiting nearly the same in-plane and out-of-plane lattice constants as in the bulk material. Films are phase-pure and show only small deviations from the ideal stoichiometry at the surface and in some cases at the interface. Growth proceeds via wetting layer plus island mode and results in a domain structure of the films. Upon coalescence of growing islands twin-boundaries (rotational twinning) and anti-phase boundaries are formed. The overall magnetization is nearly bulk-like, but shows a slower approach to saturation, which can be ascribed to the reduced magnetization at anti-phase boundaries. However, the surface magnetization which was probed by x-ray magnetic circular dichroism was significantly decreased and is ascribed to a magnetically inactive layer at the surface. Such a reduced surface magnetization was also observed for films grown on InAs and GaAs. Magnetite could also be grown with nearly ideal iron-oxygen stoichiometry on InAs substrates. However, interfacial reactions of InAs with oxygen occur and result in arsenic oxides and indium enrichment. The grown films are of polycrystalline nature. For the fabrication of Fe3O4/GaAs films, a postoxidation of epitaxial Fe films on GaAs was applied. Growth proceeds by a transformation of the topmost Fe layers into magnetite. Depending on specific growth conditions, an Fe layer of different thickness remains at the interface. The structural properties are improved in comparison with films on InAs, and the resulting films are well oriented along [001] in growth direction. The magnetic properties are influenced by the presence of the Fe interface layer as well. The saturation magnetization is increased and the approach to saturation is faster than for films on the other substrates. We argue that this is connected to a decreased density of anti-phase boundaries because of the special growth method. Interface phases, viz. arsenic and gallium oxides, are quantified and different growth conditions are compared with respect to the interface composition.},
  subject      = {Molekularstrahlepitaxie},
  language  = {en}
}
@phdthesis{Reis2022,
  author    = {Reis, Felix},
  title     = {Realization and Spectroscopy of the Quantum Spin Hall Insulator Bismuthene on Silicon Carbide},
  doi       = {10.25972/OPUS-25825},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-258250},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2022},
  abstract  = {Topological matter is one of the most vibrant research fields of contemporary solid state physics since the theoretical prediction of the quantum spin Hall effect in graphene in 2005. Quantum spin Hall insulators possess a vanishing bulk conductivity but symmetry-protected, helical edge states that give rise to dissipationless charge transport. The experimental verification of this exotic state of matter in 2007 lead to a boost of research activity in this field, inspired by possible ground-breaking future applications. However, the use of the quantum spin Hall materials available to date is limited to cryogenic temperatures owing to their comparably small bulk band gaps. In this thesis, we follow a novel approach to realize a quantum spin Hall material with a large energy gap and epitaxially grow bismuthene, i.e., Bi atoms adopting a honeycomb lattice, in a \((\sqrt{3}\times\sqrt{3})\) reconstruction on the semiconductor SiC(0001). In this way, we profit both from the honeycomb symmetry as well as the large spin-orbit coupling of Bi, which, in combination, give rise to a topologically non-trivial band gap on the order of one electronvolt. An in-depth theoretical analysis demonstrates that the covalent bond between the Si and Bi atoms is not only stabilizing the Bi film but is pivotal to attain the quantum spin Hall phase. The preparation of high-quality, unreconstructed SiC(0001) substrates sets the basis for the formation of bismuthene and requires an extensive procedure in ultra-pure dry H\(_2\) gas. Scanning tunneling microscopy measurements unveil the (\(1\times1\)) surface periodicity and smooth terrace planes, which are suitable for the growth of single Bi layers by means of molecular beam epitaxy. The chemical configuration of the resulting Bi film and its oxidation upon exposure to ambient atmosphere are inspected with X-ray photoelectron spectroscopy. Angle-resolved photoelectron spectroscopy reveals the excellent agreement of probed and calculated band structure. In particular, it evidences a characteristic Rashba-splitting of the valence bands at the K point. Scanning tunneling spectroscopy probes signatures of this splitting, as well, and allows to determine the full band gap with a magnitude of \(E_\text{gap}\approx0.8\,\text{eV}\). Constant-current images and local-density-of-state maps confirm the presence of a planar honeycomb lattice, which forms several domains due to different, yet equivalent, nucleation sites of the (\(\sqrt{3}\times\sqrt{3}\))-Bi reconstruction. Differential conductivity measurements demonstrate that bismuthene edge states evolve at atomic steps of the SiC substrate. The probed, metallic local density of states is in agreement with the density of states expected from the edge state's energy dispersion found in density functional theory calculations - besides a pronounced dip at the Fermi level. By means of temperature- and energy-dependent tunneling spectroscopy it is shown that the spectral properties of this suppressed density of states are successfully captured in the framework of the Tomonaga-Luttinger liquid theory and most likely originate from enhanced electronic correlations in the edge channel.},
  subject      = {Zweidimensionales Material},
  language  = {en}
}
@article{ReuschHolzmeierGerlachetal.2019,
  author    = {Reusch, Engelbert and Holzmeier, Fabian and Gerlach, Marius and Fischer, Ingo and Hemberger, Patrick},
  title     = {Decomposition of Picolyl Radicals at High Temperature: A Mass Selective Threshold Photoelectron Spectroscopy Study},
  series = {Chemistry - A European Journal},
  volume    = {25},
  journal   = {Chemistry - A European Journal},
  number    = {72},
  doi       = {10.1002/chem.201903937},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-208132},
  pages     = {16652-16659},
  year      = {2019},
  abstract  = {The reaction products of the picolyl radicals at high temperature were characterized by mass-selective threshold photoelectron spectroscopy in the gas phase. Aminomethylpyridines were pyrolyzed to initially produce picolyl radicals (m /z =92). At higher temperatures further thermal reaction products are generated in the pyrolysis reactor. All compounds were identified by mass-selected threshold photoelectron spectroscopy and several hitherto unexplored reactive molecules were characterized. The mechanism for several dissociation pathways was outlined in computations. The spectrum of m /z =91, resulting from hydrogen loss of picolyl, shows four isomers, two ethynyl pyrroles with adiabatic ionization energies (IE\(_{ad}\)) of 7.99 eV (2-ethynyl-1H -pyrrole) and 8.12 eV (3-ethynyl-1H -pyrrole), and two cyclopentadiene carbonitriles with IE′s of 9.14 eV (cyclopenta-1,3-diene-1-carbonitrile) and 9.25 eV (cyclopenta-1,4-diene-1-carbonitrile). A second consecutive hydrogen loss forms the cyanocyclopentadienyl radical with IE′s of 9.07 eV (T\(_0\)) and 9.21 eV (S\(_1\)). This compound dissociates further to acetylene and the cyanopropynyl radical (IE=9.35 eV). Furthermore, the cyclopentadienyl radical, penta-1,3-diyne, cyclopentadiene and propargyl were identified in the spectra. Computations indicate that dissociation of picolyl proceeds initially via a resonance-stabilized seven-membered ring.},
  language  = {en}
}