@article{ArcaTeddeSrameketal.2013,
  author    = {Arca, Francesco and Tedde, Sandro F. and Sramek, Maria and Rauh, Julia and Lugli, Paolo and Hayden, Oliver},
  title     = {Interface Trap States in Organic Photodiodes},
  series = {Scientific Reports},
  volume    = {3},
  journal   = {Scientific Reports},
  doi       = {10.1038/srep01324},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-131507},
  pages     = {1324},
  year      = {2013},
  abstract  = {Organic semiconductors are attractive for optical sensing applications due to the effortless processing on large active area of several \(cm^2\), which is difficult to achieve with solid-state devices. However, compared to silicon photodiodes, sensitivity and dynamic behavior remain a major challenge with organic sensors. Here, we show that charge trapping phenomena deteriorate the bandwidth of organic photodiodes (OPDs) to a few Hz at low-light levels. We demonstrate that, despite the large OPD capacitances of similar to 10 nF \(cm^{-2}\), a frequency response in the kHz regime can be achieved at light levels as low as 20 nW \(cm^{-2}\) by appropriate interface engineering, which corresponds to a 1000-fold increase compared to state-of-the-art OPDs. Such device characteristics indicate that large active area OPDs are suitable for industrial sensing and even match medical requirements for single X-ray pulse detection in the millisecond range.},
  language  = {en}
}