@phdthesis{Walther2008,
  author    = {Walther, Markus},
  title     = {Simulation of strain-induced and defect-controlled self-organization of nanostructures},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-27931},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2008},
  abstract  = {In this PhD thesis, the effect of strain on heteroepitaxial growth is investigated by means of Kinetic Monte Carlo simulations. In this context the lattice misfit, arising from the different lattice constants of the adsorbate and the substrate material, is of particular interest. As a consequence, this lattice misfit leads to long-range elastic strain effects having strong influence on the entire growing crystal and its resulting surface morphology. The main focus of this work is the investigation of different strain relaxation mechanisms and their controlling parameters, revealing interesting consequences on the subsequent growth. Since epitaxial growth is carried out under conditions far away from thermodynamic equilibrium, it is strongly determined by surface kinetics. At this point the relevant kinetic microscopic processes are described, followed by theoretical considerations of heteroepitaxial growth disclosing an overview over several independent methodological streams, used to model epitaxy in different time and length scales, as well as the characterization of misfit dislocations and the classification of epitaxial growth modes based on thermodynamic considerations. The epitaxial growth is performed by means of Kinetic Monte Carlo simulations which allows for the consideration of long range effects in systems with lateral extension of few hundred atoms. By using an off-lattice simulation model the particles are able to leave their predefined lattice sites, which is an indispensable condition for simulating strain relaxation mechanisms. The main idea of our used model is calculating the activation energy of all relevant thermally activated processes by using simple pair potentials and then realizing the dynamics by performing each event according to its probability by means of a rejection-free algorithm method. In addition, the crystal relaxation procedure, the grid-based particle access method, which accelerates the simulation enormously, and the efficient implementation of the algorithm are discussed. To study the influence of long range elastic strain effects, the main part of this work was realized on the two dimensional triangular lattice, which can be treated as a cross section of the real three dimensional case. Chapter 4 deals with the formation of misfit dislocations as a strain relaxation mechanism and the resulting consequences on the subsequent heteroepitaxial growth. We can distinguish between two principally different dislocation formation mechanisms, depending strongly on the sign as well as on the magnitude of the misfit, but also the surface kinetics need to be taken into account. Additionally, the dislocations affect the lattice spacings of the crystal whose observed progression is in qualitative good agreement with experimental results. Furthermore, the dislocations influence the subsequent growth of the adsorbate film, since the potential energy of an adatom is modulated by buried dislocations. A clear correlation between the lateral positions of buried dislocations and the positions of mounds grown on the surface can be observed. In chapter 5, an alternative strain relaxation mechanism is studied: the formation of three dimensional islands enables the particles to approach their preferred lattice spacing. We demonstrate that it is possible to adjust within our simulation model each of the three epitaxial growth modes: Volmer-Weber, Frank-van der Merve or layer-by-layer, and Stranski-Krastanov growth mode. Moreover, we can show that the emerging growth mode depends in principle on two parameters: on the one hand the interaction strength of adsorbate particles with each other, compared to the interaction of adsorbate with substrate particles, and on the other hand the lattice misfit between adsorbate and substrate particles. A sensible choice of these two parameters allows the realization of each growth mode within the simulations. In conclusion, the formation of nanostructures controlled by an underlying dislocation network can be applied in the concept of self-organized pattern formation as well as by the tendency to form ordered arrays of strain-induced three dimensional grown islands. In chapter 6, we extend our model to three dimensions and investigate the effect of strain on growth on bcc(100) surfaces. We introduce an anisotropic potential yielding a stable bcc lattice structure within the off-lattice representation. We can show that the strain built up in submonolayer islands is mainly released at the island edges and the lattice misfit has strong influence on the diffusion process on the plane surface as well as on the situation at island edges with eminent consequences on the appearance of submonolayer islands.},
  subject      = {Kristallwachstum},
  language  = {en}
}
@phdthesis{Weber2008,
  author    = {Weber, Sebastian},
  title     = {Simulation of self-assembled nanopatterns in binary alloys on the fcc(111) surface},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-27914},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2008},
  abstract  = {In this PhD thesis, we study the heteroepitaxial crystal growth by means of Monte Carlo simulations. Of particular interest in this work is the influence of the lattice mismatch of the adsorbates relative to the substrate on surface structures. In the framework of an off-lattice model, we consider one monolayer of adsorbate and investigate the emerging nanopatterns in equilibrium and their formation during growth. In chapter 1, a brief introduction is given, which describes the role of computer simulations in the field of the physics of condensed matter. Chapter 2 is devoted to some technical basics of experimental methods of molecular beam epitaxy and the theoretical description. Before a model for the simulation can be designed, it is necessary to make some considerations of the single processes which occur during epitaxial growth. For that purpose we look at an experimental setup and extract the main microscopic processes. Afterwards a brief overview of different theoretical concepts describing that physical procedures is given. In chapter 3, the model used in the simulations is presented. The aim is to investigate the growth of an fcc crystal in the [111] direction. In order to keep the simulation times within a feasible limit a simple pair potential, the Lennard-Jones potential, with continuous particle positions is used, which are necessary to describe effects resulting from the atomic mismatch in the crystal. Furthermore the detailed algorithm is introduced which is based on the idea to calculate the barrier of each diffusion event and to use the barriers in a rejection-free method. Chapter 4 is attended to the simulation of equilibrium. The influence of different parameters on the emerging structures in the first monolayer upon the surface, which is completely covered with two adsorbate materials, is studied. Especially the competition between binding energy and strain leads to very interesting pattern formations like islands or stripes. In chapter 5 the results of growth simulations are presented. At first, we introduce a model in order to realize off-lattice Kinetic Monte Carlo simulations. Since the costs in simulation time are enormous, some simplifications in the calculation of diffusion barriers are necessary and therefore the previous model is supplemented with some elements from the so-called ball and spring model. The next point is devoted to the calculation of energy barriers followed by the presentation of the growth simulations. Binary systems with only one sort of adsorbate are investigated as well as ternary systems with two different adsorbates. Finally, a comparison to the equilibrium simulations is drawn. Chapter 6 contains some concluding remarks and gives an outlook to possible further investigations.},
  subject      = {Kristallwachstum},
  language  = {en}
}