@article{WyborskiPodemskiWrońskietal.2022,
  author    = {Wyborski, Paweł and Podemski, Paweł and Wroński, Piotr Andrzej and Jabeen, Fauzia and H{\"o}fling, Sven and Sęk, Grzegorz},
  title     = {Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer},
  series = {Materials},
  volume    = {15},
  journal   = {Materials},
  number    = {3},
  issn      = {1996-1944},
  doi       = {10.3390/ma15031071},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-297037},
  year      = {2022},
  abstract  = {We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.},
  language  = {en}
}
@article{PfenningKruegerJabeenetal.2022,
  author    = {Pfenning, Andreas and Kr{\"u}ger, Sebastian and Jabeen, Fauzia and Worschech, Lukas and Hartmann, Fabian and H{\"o}fling, Sven},
  title     = {Single-photon counting with semiconductor resonant tunneling devices},
  series = {Nanomaterials},
  volume    = {12},
  journal   = {Nanomaterials},
  number    = {14},
  issn      = {2079-4991},
  doi       = {10.3390/nano12142358},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-281922},
  year      = {2022},
  abstract  = {Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined single-photon detectors (SPDs) with enhanced detector performance. Superconducting nanowire single-photon detectors (SNSPDs) and single-photon avalanche diodes (SPADs) are the top-performer in this field, but alternative promising and innovative devices are emerging. In this review article, we discuss the current state-of-the-art of one such alternative device capable of single-photon counting: the resonant tunneling diode (RTD) single-photon detector. Due to their peculiar photodetection mechanism and current-voltage characteristic with a region of negative differential conductance, RTD single-photon detectors provide, theoretically, several advantages over conventional SPDs, such as an inherently deadtime-free photon-number resolution at elevated temperatures, while offering low dark counts, a low timing jitter, and multiple photon detection modes. This review article brings together our previous studies and current experimental results. We focus on the current limitations of RTD-SPDs and provide detailed design and parameter variations to be potentially employed in next-generation RTD-SPD to improve the figure of merits of these alternative single-photon counting devices. The single-photon detection capability of RTDs without quantum dots is shown.},
  language  = {en}
}
@article{RothmayrGuarinCastroHartmannetal.2022,
  author    = {Rothmayr, Florian and Guarin Castro, Edgar David and Hartmann, Fabian and Knebl, Georg and Schade, Anne and H{\"o}fling, Sven and Koeth, Johannes and Pfenning, Andreas and Worschech, Lukas and Lopez-Richard, Victor},
  title     = {Resonant tunneling diodes: mid-infrared sensing at room temperature},
  series = {Nanomaterials},
  volume    = {12},
  journal   = {Nanomaterials},
  number    = {6},
  issn      = {2079-4991},
  doi       = {10.3390/nano12061024},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-267152},
  year      = {2022},
  abstract  = {Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2-4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor's electrical response and how they allow controlling the device's sensing abilities.},
  language  = {en}
}
@article{LiShanRupprechtetal.2022,
  author    = {Li, Donghai and Shan, Hangyong and Rupprecht, Christoph and Knopf, Heiko and Watanabe, Kenji and Taniguchi, Takashi and Qin, Ying and Tongay, Sefaattin and Nuß, Matthias and Schr{\"o}der, Sven and Eilenberger, Falk and H{\"o}fling, Sven and Schneider, Christian and Brixner, Tobias},
  title     = {Hybridized exciton-photon-phonon states in a transition-metal-dichalcogenide van-der-Waals heterostructure microcavity},
  series = {Physical Review Letters},
  journal   = {Physical Review Letters},
  edition   = {accepted version},
  issn      = {1079-7114},
  doi       = {10.1103/PhysRevLett.128.087401},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-351303},
  year      = {2022},
  abstract  = {Excitons in atomically thin transition-metal dichalcogenides (TMDs) have been established as an attractive platform to explore polaritonic physics, owing to their enormous binding energies and giant oscillator strength. Basic spectral features of exciton polaritons in TMD microcavities, thus far, were conventionally explained via two-coupled-oscillator models. This ignores, however, the impact of phonons on the polariton energy structure. Here we establish and quantify the threefold coupling between excitons, cavity photons, and phonons. For this purpose, we employ energy-momentum-resolved photoluminescence and spatially resolved coherent two-dimensional spectroscopy to investigate the spectral properties of a high-quality-factor microcavity with an embedded WSe\(_2\) van-der-Waals heterostructure at room temperature. Our approach reveals a rich multi-branch structure which thus far has not been captured in previous experiments. Simulation of the data reveals hybridized exciton-photon-phonon states, providing new physical insight into the exciton polariton system based on layered TMDs.},
  language  = {en}
}
@article{WrońskiWyborskiMusiałetal.2021,
  author    = {Wroński, Piotr Andrzej and Wyborski, Paweł and Musiał, Anna and Podemski, Paweł and Sęk, Grzegorz and H{\"o}fling, Sven and Jabeen, Fauzia},
  title     = {Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate},
  series = {Materials},
  volume    = {14},
  journal   = {Materials},
  number    = {18},
  issn      = {1996-1944},
  doi       = {10.3390/ma14185221},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-246145},
  year      = {2021},
  abstract  = {We demonstrate single-photon emission with a low probability of multiphoton events of 5\% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42\% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.},
  language  = {en}
}
@article{vanLoockAltBecheretal.2020,
  author    = {van Loock, Peter and Alt, Wolfgang and Becher, Christoph and Benson, Oliver and Boche, Holger and Deppe, Christian and Eschner, J{\"u}rgen and H{\"o}fling, Sven and Meschede, Dieter and Michler, Peter and Schmidt, Frank and Weinfurter, Harald},
  title     = {Extending Quantum Links: Modules for Fiber- and Memory-Based Quantum Repeaters},
  series = {Advanced Quantum Technologies},
  volume    = {3},
  journal   = {Advanced Quantum Technologies},
  number    = {11},
  doi       = {10.1002/qute.201900141},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-228322},
  year      = {2020},
  abstract  = {Elementary building blocks for quantum repeaters based on fiber channels and memory stations are analyzed. Implementations are considered for three different physical platforms, for which suitable components are available: quantum dots, trapped atoms and ions, and color centers in diamond. The performances of basic quantum repeater links for these platforms are evaluated and compared, both for present-day, state-of-the-art experimental parameters as well as for parameters that can in principle be reached in the future. The ultimate goal is to experimentally explore regimes at intermediate distances—up to a few 100 km—in which the repeater-assisted secret key transmission rates exceed the maximal rate achievable via direct transmission. Two different protocols are considered, one of which is better adapted to the higher source clock rate and lower memory coherence time of the quantum dot platform, while the other circumvents the need of writing photonic quantum states into the memories in a heralded, nondestructive fashion. The elementary building blocks and protocols can be connected in a modular form to construct a quantum repeater system that is potentially scalable to large distances.},
  language  = {en}
}
@article{SchlottmannSchickeKruegeretal.2019,
  author    = {Schlottmann, Elisabeth and Schicke, David and Kr{\"u}ger, Felix and Lingnau, Benjamin and Schneider, Christian and H{\"o}fling, Sven and L{\"u}dge, Kathy and Porte, Xavier and Reitzenstein, Stephan},
  title     = {Stochastic polarization switching induced by optical injection in bimodal quantum-dot micropillar lasers},
  series = {Optics Express},
  volume    = {27},
  journal   = {Optics Express},
  number    = {20},
  doi       = {10.1364/OE.27.028816},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-228603},
  pages     = {28816-28831},
  year      = {2019},
  abstract  = {Mutual coupling and injection locking of semiconductor lasers is of great interest in non-linear dynamics and its applications for instance in secure data communication and photonic reservoir computing. Despite its importance, it has hardly been studied in microlasers operating at mu W light levels. In this context, vertically emitting quantum dot micropillar lasers are of high interest. Usually, their light emission is bimodal, and the gain competition of the associated linearly polarized fundamental emission modes results in complex switching dynamics. We report on selective optical injection into either one of the two fundamental mode components of a bimodal micropillar laser. Both modes can lock to the master laser and influence the non-injected mode by reducing the available gain. We demonstrate that the switching dynamics can be tailored externally via optical injection in very good agreement with our theory based on semi-classical rate equations. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement},
  language  = {en}
}
@article{WurdackLundtKlaasetal.2017,
  author    = {Wurdack, Matthias and Lundt, Nils and Klaas, Martin and Baumann, Vasilij and Kavokin, Alexey V. and H{\"o}fling, Sven and Schneider, Christian},
  title     = {Observation of hybrid Tamm-plasmon exciton-polaritons with GaAs quantum wells and a MoSe\(_{2}\) monolayer},
  series = {Nature Communications},
  volume    = {8},
  journal   = {Nature Communications},
  number    = {259},
  doi       = {10.1038/s41467-017-00155-w},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-170480},
  year      = {2017},
  abstract  = {Strong light matter coupling between excitons and microcavity photons, as described in the framework of cavity quantum electrodynamics, leads to the hybridization of light and matter excitations. The regime of collective strong coupling arises, when various excitations from different host media are strongly coupled to the same optical resonance. This leads to a well-controllable admixture of various matter components in three hybrid polariton modes. Here, we study a cavity device with four embedded GaAs quantum wells hosting excitons that are spectrally matched to the A-valley exciton resonance of a MoSe\(_{2}\) monolayer. The formation of hybrid polariton modes is evidenced in momentum resolved photoluminescence and reflectivity studies. We describe the energy and k-vector distribution of exciton-polaritons along the hybrid modes by a thermodynamic model, which yields a very good agreement with the experiment.},
  language  = {en}
}
@article{KimZhangWangetal.2016,
  author    = {Kim, Seonghoon and Zhang, Bo and Wang, Zhaorong and Fischer, Julian and Brodbeck, Sebastian and Kamp, Martin and Schneider, Christian and H{\"o}fling, Sven and Deng, Hui},
  title     = {Coherent Polariton Laser},
  series = {Physical Review X},
  volume    = {6},
  journal   = {Physical Review X},
  number    = {011026},
  doi       = {10.1103/PhysRevX.6.011026},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-166597},
  year      = {2016},
  abstract  = {The semiconductor polariton laser promises a new source of coherent light, which, compared to conventional semiconductor photon lasers, has input-energy threshold orders of magnitude lower. However, intensity stability, a defining feature of a coherent state, has remained poor. Intensity noise many times the shot noise of a coherent state has persisted, attributed to multiple mechanisms that are difficult to separate in conventional polariton systems. The large intensity noise, in turn, limits the phase coherence. Thus, the capability of the polariton laser as a source of coherence light is limited. Here, we demonstrate a polariton laser with shot-noise-limited intensity stability, as expected from a fully coherent state. This stability is achieved by using an optical cavity with high mode selectivity to enforce single-mode lasing, suppress condensate depletion, and establish gain saturation. Moreover, the absence of spurious intensity fluctuations enables the measurement of a transition from exponential to Gaussian decay of the phase coherence of the polariton laser. It suggests large self-interaction energies in the polariton condensate, exceeding the laser bandwidth. Such strong interactions are unique to matter-wave lasers and important for nonlinear polariton devices. The results will guide future development of polariton lasers and nonlinear polariton devices.},
  language  = {en}
}
@article{RedlichLingnauHolzingeretal.2016,
  author    = {Redlich, Christoph and Lingnau, Benjamin and Holzinger, Steffen and Schlottmann, Elisabeth and Kreinberg, S{\"o}ren and Schneider, Christian and Kamp, Martin and H{\"o}fling, Sven and Wolters, Janik and Reitzenstein, Stephan and L{\"u}dge, Kathy},
  title     = {Mode-switching induced super-thermal bunching in quantum-dot microlasers},
  series = {New Journal of Physics},
  volume    = {18},
  journal   = {New Journal of Physics},
  number    = {063011},
  doi       = {10.1088/1367-2630/18/6/063011},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-166286},
  year      = {2016},
  abstract  = {The super-thermal photon bunching in quantum-dot (QD) micropillar lasers is investigated both experimentally and theoretically via simulations driven by dynamic considerations. Using stochastic multi-mode rate equations we obtain very good agreement between experiment and theory in terms of intensity profiles and intensity-correlation properties of the examined QD micro-laser's emission. Further investigations of the time-dependent emission show that super-thermal photon bunching occurs due to irregular mode-switching events in the bimodal lasers. Our bifurcation analysis reveals that these switchings find their origin in an underlying bistability, such that spontaneous emission noise is able to effectively perturb the two competing modes in a small parameter region. We thus ascribe the observed high photon correlation to dynamical multistabilities rather than quantum mechanical correlations.},
  language  = {en}
}