@phdthesis{Hajer2022,
  author    = {Hajer, Jan},
  title     = {Mercury Telluride Nanowires for Topological Quantum Transport},
  doi       = {10.25972/OPUS-29322},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-293222},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2022},
  abstract  = {Novel appraches to the molecular beam epitaxy of core-shell nanowires in the group II telluride material system were explored in this work. Significant advances in growth spurred the development of a flexible and reliable platform for a charge transport characterization of the topological insulator HgTe in a tubular nanowire geometry. The transport results presented provide an important basis for the design of future studies that strive for the experimental realization of topological charge transport in the quantum wire limit.},
  subject      = {Quecksilbertellurid},
  language  = {en}
}
@article{FornariRapplMorelhaoetal.2016,
  author    = {Fornari, C. I. and Rappl, P. H. O. and Morelhao, S. L. and Peixoto, T. R. F. and Bentmann, H. and Reinert, F. and Abramof, E.},
  title     = {Preservation of pristine Bi\(_2\)Te\(_3\) thin film topological insulator surface after ex situ mechanical removal of Te capping layer},
  series = {APL Materials},
  volume    = {4},
  journal   = {APL Materials},
  doi       = {10.1063/1.4964610},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-164468},
  pages     = {106107},
  year      = {2016},
  abstract  = {Ex situ analyses on topological insulator films require protection against surface contamination during air exposure. This work reports on a technique that combines deposition of protective capping just after epitaxial growth and its mechanical removal inside ultra-high vacuum systems. This method was applied to Bi2Te3 films with thickness varying from 8 to 170 nm. Contrarily to other methods, this technique does not require any sputtering or thermal annealing setups installed inside the analyzing system and preserves both film thickness and surface characteristics. These results suggest that the technique presented here can be expanded to other topological insulator materials.},
  language  = {en}
}