@phdthesis{Pohl2013, author = {Pohl, Christoph}, title = {Silicon Based MBE of Manganese-Silicide and Silicon-Suboxide}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-83757}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2013}, abstract = {The present thesis deals with the fabrication, optimization of growth process and characterization of silicon based materials with molecular beam epitaxy. Two material systems are investigated in the course of this work: silicon/silicon suboxide multilayer structures and mono manganese silicide thin films. Mono manganese silicide (MnSi) is grown on Si(111) substrates with an hydrogen passivated surface, that is prepared by wet chemical processes. The growth start is performed by deposition of an amorphous Mn wetting layer that is subsequently annealed to form a MnSi seed layer on which the MnSi molecular beam epitaxy (MBE) is achieved. An amorphous or a crystalline Si cap layer is deposited onto the MnSi film to finalize the growth process and protect the sample from oxidation. With Raman spectroscopy it is shown that the crystalline cap layer is in fact single crystalline silicon. Results of x-ray diffraction and Raman spectroscopy confirm the growth of mono manganese silicide in contrast to other existing manganese silicide phases. In addition, in-plane and out-of-plane residual strain, and twinning of the MnSi thin film is detected with x-ray diffraction of symmetric and asymmetric reflections. Orientation between the Si substrate and the MnSi film is determined with the parallel lattice planes MnSi(210) and Si(511). Transport measurements show a T^2 dependence of the resistivity below 30K and metallic behavior above, a magneto resistance of 0.9\% and an unusual memory like effect of the resistance for an in-plane magnetic field sweep measurement. Silicon/Silicon suboxide (SiOx) multilayer structures are grown on Si(100) by interrupting the Si growth and oxidizing the surface with molecular oxygen. During oxidation the RHEED pattern changes from the Si(2x1) reconstruction to an amorphous pattern. When silicon growth is resumed a spotty RHEED pattern emerges, indicating a rough, three dimensional surface. The rough surface can be smoothed out with Si growth at substrate temperatures between 600°C and 700°C. Measurements with transmission electron microscopy show that a silicon suboxide layer of about 1nm embedded in single crystalline silicon is formed with the procedure. Multilayer structures are achieved by repeating the oxidation procedure when the Si spacer layer has a smooth and flat surface. The oxygen content of the suboxide layers can be varied between 7.6\% and 26.8\%, as determined with secondary ion mass spectrometry and custom-built simulations models for the x-ray diffraction. Structural stability of the multilayer structures is investigated by x-ray diffraction before and after rapid thermal annealing. For temperatures up to 1000°C the multilayer structures show no modification of the SiOx layer in x-ray diffraction.}, subject = {Molekularstrahlepitaxie}, language = {en} } @phdthesis{Gluyas2012, author = {Gluyas, Josef Bheinn George}, title = {Synthesis of Silicon-Based Drugs and Odourants}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-72182}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2012}, abstract = {This thesis concerns (i) the synthesis and olfactory characterisation of silicon-containing analogues of the musk odourant phantolide, (ii) the synthesis and pharmacological investigation of silicon-containing analogues of retinoids of the EC23 and TTNN type and (iii) the attempted syntheses of silicon-containing analogues of the antipsychotic penfluridol and the antidiarrhoeal agent loperamide. All target compounds and intermediates were characterised by multinuclear NMR studies (1H, 13C, 15N, 19F, 29Si) and elemental analyses or high-resolution mass spectrometry. Additionally, some of these compounds were characterized by single crystal X-ray diffraction studies.}, subject = {Silicium}, language = {en} } @phdthesis{Cota2010, author = {Cota, Smaranda}, title = {Contributions to the Chemistry of Higher-Coordinate Silicon: Synthesis, Structure, and Stereodynamics of New Penta- and Hexacoordinate Silicon(IV) Complexes}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-52312}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2010}, abstract = {Im Vordergrund dieser Arbeit stand die Synthese und strukturelle Charakterisierung penta- und hexakoordinierter Silicium(IV)-Komplexe. Im Verlauf dieser Untersuchungen wurden die neutralen pentakoordinierten Silicium(IV)-Komplexe 38, 39, 43-48, 54 und 55 dargestellt. Weiterhin konnten die neutralen hexakoordinierten Silicium(IV)-Komplexe 33-36,49, 50, 52, 53, 56-62, 63, 64 und 65 synthetisiert werden. Die Charakterisierung aller Verbindungen erfolgte durch Elementaranalyse, NMR-Spektroskopie in L{\"o}sung (1H, 13C, 15N, 29Si) und im Festk{\"o}rper (13C, 15N, 29Si VACP/MAS NMR), sowie durch Kristallstrukturanalyse(außer 45, 47-49, 52, 53 und 63).}, subject = {Silicium}, language = {en} } @phdthesis{Daiss2004, author = {Daiß, J{\"u}rgen Oliver}, title = {Synthesis of sila-analogs and silicon-containing derivatives of drugs and development and application of the Si-2,4,6-trimethoxyphenyl moiety as a novel protecting group in organosilicon chemistry}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-11187}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2004}, abstract = {The present work describes the synthesis of sila-venlafaxine, disila-bexarotene, disila-AG-045572 (disila-CMPD1), a series of silicon-based allosteric modulators of muscarinic receptors, and a partial synthesis of sila-gabapentin. Crystal structure data of rac-sila-venlafaxine hydrochloride, (R)-sila-venlafaxine hydrobromide, bexarotene, disila-bexarotene, and disila-AG-045572 (disila-CMPD1) are included. Studies on the biological activities of sila-venlafaxine and of silicon-based allosteric modulators of muscarinic receptors are discussed. The Si-2,4,6-trimethoxyphenyl (Si-2,4,6-TMOP) moiety is described as a novel, acid-labile protecting group in organosilicon chemistry. The synthesis of chlorotris(chloromethyl)silane and tris(chloromethyl)methoxysilane is described.}, subject = {Wirkstoff}, language = {en} }