@article{WaagHeinkeScholletal.1993,
  author    = {Waag, A. and Heinke, H. and Scholl, S. and Becker, Charles R. and Landwehr, G.},
  title     = {Growth of MgTe and Cd\(_{1-x}\)Mg\(_x\)Te thin films by molecular beam epitaxy},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37917},
  year      = {1993},
  abstract  = {We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd\(_{l-x}\)Mg, Te by molecular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cd\(_{l_x}\),Mg\(_x\)Te epilayers were grown with a Mg concentration between 0 and 68\%, which corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7\%. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the rather good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range.},
  language  = {en}
}
@article{ShanjiaXinzhangGreineretal.1992,
  author    = {Shanjia, Xu and Xinzhang, Wu and Greiner, P. and Becker, Charles R. and Geick, R.},
  title     = {Microwave transmission and reflection of stratified lossy dielectric segments partially filled waveguide},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37958},
  year      = {1992},
  abstract  = {The microwave transmission and reßection is evaluated for stratified lossy dielectric segments partially filling the rectangular waveguide by the method which combines the multimode network theory with the rigorous mode matching procedure. As an example, we investigate in detail the microwave scattering properties of II-VI-epitaxial layer on a lossy dielectric substrate inserted in the rectangular waveguide. The experimental data verify the accuracy and the effectiveness of the present method. Extensive numerical results are presented to establish useful guidelines for the contactless microwave measurement of the conductivity of the epitaxiallayer.},
  language  = {en}
}
@article{ShanjiaXinzhangBoegeetal.1993,
  author    = {Shanjia, Xu and Xinzhang, Wu and Boege, P. and Sch{\"a}fer, H. and Becker, Charles R. and Geick, R.},
  title     = {Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37964},
  year      = {1993},
  abstract  = {No abstract available},
  language  = {en}
}
@article{HeBeckerBicknellTassiusetal.1993,
  author    = {He, L. and Becker, Charles R. and Bicknell-Tassius, R. N. and Scholl, S. and Landwehr, G.},
  title     = {Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped (100) Hg\(_{0.8}\)Cd\(_{0.2}\)Te on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37885},
  year      = {1993},
  abstract  = {No abstract available.},
  language  = {en}
}
@article{SchikoraHausleitnerEinfeldtetal.1994,
  author    = {Schikora, D. and Hausleitner, H. and Einfeldt, S. and Becker, Charles R. and Widmer, T. and Giftige, C. and Lischka, K. and von Ortenburg, M. and Landwehr, G.},
  title     = {Epitaxial overgrowth of II-VI compounds on patterned substrates},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37985},
  year      = {1994},
  abstract  = {The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes.},
  language  = {en}
}
@article{EinfeldtHeinkeBehringeretal.1994,
  author    = {Einfeldt, S. and Heinke, H. and Behringer, M. and Becker, Charles R. and Kurtz, E. and Hommel, D. and Landwehr, G.},
  title     = {The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-38001},
  year      = {1994},
  abstract  = {The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.},
  language  = {en}
}
@article{WuBeckerWaagetal.1993,
  author    = {Wu, Y. S. and Becker, Charles R. and Waag, A. and Bicknell-Tassius, R. N. and Landwehr, G.},
  title     = {Removal of oxygen and reduction of carbon contamination on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-38014},
  year      = {1993},
  abstract  = {No abstract available},
  language  = {en}
}
@article{ZhangBeckerZhangetal.1994,
  author    = {Zhang, X. F. and Becker, Charles R. and Zhang, H. and He, L. and Landwehr, G.},
  title     = {Investigation of a short period (001) HgTe-Hg\(_{0.6}\)Cd\(_{0.4}\)Te superlattice by transmission electron microscopy},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-38029},
  year      = {1994},
  abstract  = {No abstract available},
  language  = {en}
}
@article{BeckerMartin1972,
  author    = {Becker, Charles R. and Martin, T. P.},
  title     = {Infrared absorption by Impurity-pair resonant modes in NaCl:F},
  isbn      = {1098-0121},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37840},
  year      = {1972},
  abstract  = {New resonant-mode infrared absorption lines have been observed in NaCl with high concentrations of fluorine impurities. The quadratic concentration dependence of the strength of these lines indicates that they are due to pairs of fluorine impurities. At the resonant frequencies, the motion of some host ions appears to be as important as the motion of the impurities themselves.},
  subject      = {Festk{\"o}rperphysik},
  language  = {en}
}
@article{BeckerNath1970,
  author    = {Becker, Charles R. and Nath, G.},
  title     = {Optical properties of LiIO\(_3\) in the far infrared},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37905},
  year      = {1970},
  abstract  = {No abstract available},
  language  = {en}
}