@article{LundtKlembtCherotchenkoetal.2016,
  author    = {Lundt, Nils and Klembt, Sebastian and Cherotchenko, Evgeniia and Betzold, Simon and Iff, Oliver and Nalitov, Anton V. and Klaas, Martin and Dietrich, Christof P. and Kavokin, Alexey V. and H{\"o}fling, Sven and Schneider, Christian},
  title     = {Room-temperature Tamm-plasmon exciton-polaritons with a WSe\(_{2}\) monolayer},
  series = {Nature Communications},
  volume    = {7},
  journal   = {Nature Communications},
  doi       = {10.1038/ncomms13328},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-169470},
  year      = {2016},
  abstract  = {Solid-state cavity quantum electrodynamics is a rapidly advancing field, which explores the frontiers of light-matter coupling. Metal-based approaches are of particular interest in this field, as they carry the potential to squeeze optical modes to spaces significantly below the diffraction limit. Transition metal dichalcogenides are ideally suited as the active material in cavity quantum electrodynamics, as they interact strongly with light at the ultimate monolayer limit. Here, we implement a Tamm-plasmon-polariton structure and study the coupling to a monolayer of WSe\(_{2}\), hosting highly stable excitons. Exciton-polariton formation at room temperature is manifested in the characteristic energy-momentum dispersion relation studied in photoluminescence, featuring an anti-crossing between the exciton and photon modes with a Rabi-splitting of 23.5 meV. Creating polaritonic quasiparticles in monolithic, compact architectures with atomic monolayers under ambient conditions is a crucial step towards the exploration of nonlinearities, macroscopic coherence and advanced spinor physics with novel, low-mass bosons.},
  language  = {en}
}
@article{AnisimovSiminSoltamovetal.2016,
  author    = {Anisimov, A. N. and Simin, D. and Soltamov, V. A. and Lebedev, S. P. and Baranov, P. G. and Astakhov, G. V. and Dyakonov, V.},
  title     = {Optical thermometry based on level anticrossing in silicon carbide},
  series = {Scientific Reports},
  volume    = {6},
  journal   = {Scientific Reports},
  number    = {33301},
  doi       = {10.1038/srep33301},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-147809},
  year      = {2016},
  abstract  = {We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz\(^{1/2}\) for a detection volume of approximately 10\(^{-6}\) mm\(^3\). In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.},
  language  = {en}
}
@article{KrausHeiberVaethetal.2016,
  author    = {Kraus, Hannes and Heiber, Michael C. and V{\"a}th, Stefan and Kern, Julia and Deibel, Carsten and Sperlich, Andreas and Dyakonov, Vladimir},
  title     = {Analysis of Triplet Exciton Loss Pathways in PTB7:PC\(_{71}\)BM Bulk Heterojunction Solar Cells},
  series = {Scientific Reports},
  volume    = {6},
  journal   = {Scientific Reports},
  number    = {29158},
  doi       = {10.1038/srep29158},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-147413},
  year      = {2016},
  abstract  = {A strategy for increasing the conversion efficiency of organic photovoltaics has been to increase the VOC by tuning the energy levels of donor and acceptor components. However, this opens up a new loss pathway from an interfacial charge transfer state to a triplet exciton (TE) state called electron back transfer (EBT), which is detrimental to device performance. To test this hypothesis, we study triplet formation in the high performing PTB7:PC\(_{71}\)BM blend system and determine the impact of the morphology-optimizing additive 1,8-diiodoctane (DIO). Using photoluminescence and spin-sensitive optically detected magnetic resonance (ODMR) measurements at low temperature, we find that TEs form on PC\(_{71}\)BM via intersystem crossing from singlet excitons and on PTB7 via EBT mechanism. For DIO blends with smaller fullerene domains, an increased density of PTB7 TEs is observed. The EBT process is found to be significant only at very low temperature. At 300 K, no triplets are detected via ODMR, and electrically detected magnetic resonance on optimized solar cells indicates that TEs are only present on the fullerenes. We conclude that in PTB7:PC\(_{71}\)BM devices, TE formation via EBT is impacted by fullerene domain size at low temperature, but at room temperature, EBT does not represent a dominant loss pathway.},
  language  = {en}
}