@phdthesis{Hoepfner2012, author = {H{\"o}pfner, Philipp Alexander}, title = {Two-Dimensional Electron Systems at Surfaces — Spin-Orbit Interaction and Electronic Correlations}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-78876}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2012}, abstract = {This thesis addresses three different realizations of a truly two-dimensional electron system (2DES), established at the surface of elemental semiconductors, i.e., Pt/Si(111), Au/Ge(111), and Sn/Si(111). Characteristic features of atomic structures at surfaces have been studied using scanning tunneling microscopy and low energy electron diffraction with special emphasis on Pt deposition onto Si(111). Topographic inspection reveals that Pt atoms agglomerate as trimers, which represent the structural building block of phase-slip domains. Surprisingly, each trimer is rotated by 30° with respect to the substrate, which results in an unexpected symmetry breaking. In turn, this represents a unique example of a chiral structure at a semiconductor surface, and marks Pt/Si(111) as a promising candidate for catalytic processes at the atomic scale. Spin-orbit interactions (SOIs) play a significant role at surfaces involving heavy adatoms. As a result, a lift of the spin degeneracy in the electronic states, termed as Rashba effect, may be observed. A candidate system to exhibit such physics is Au/Ge(111). Its large hexagonal Fermi sheet is suggested to be spin-split by calculations within the density functional theory. Experimental clarification is obtained by exploiting the unique capabilities of three-dimensional spin detection in spin- and angle-resolved photoelectron spectroscopy. Besides verification of the spin splitting, the in-plane components of the spin are shown to possess helical character, while also a prominent rotation out of this plane is observed along straight sections of the Fermi surface. Surprisingly and for the first time in a 2DES, additional in-plane rotations of the spin are revealed close to high symmetry directions. This complex spin pattern must originate from crystalline anisotropies, and it is best described by augmenting the original Rashba model with higher order Dresselhaus-like SOI terms. The alternative use of group-IV adatoms at a significantly reduced coverage drastically changes the basic properties of a 2DES. Electron localization is strongly enhanced, and the ground state characteristics will be dominated by correlation effects then. Sn/Si(111) is scrutinized with this regard. It serves as an ideal realization of a triangular lattice, that inherently suffers from spin frustration. Consequently, long-range magnetic order is prohibited, and the ground state is assumed to be either a spiral antiferromagnetic (AFM) insulator or a spin liquid. Here, the single-particle spectral function is utilized as a fundamental quantity to address the complex interplay of geometric frustration and electronic correlations. In particular, this is achieved by combining the complementary strengths of ab initio local density approximation (LDA) calculations, state-of-the-art angle-resolved photoelectron spectroscopy, and the sophisticated many-body LDA+DCA. In this way, the evolution of a shadow band and a band backfolding incompatible with a spiral AFM order are unveiled. Moreover, beyond nearest-neighbor hopping processes are crucial here, and the spectral features must be attributed to a collinear AFM ground state, contrary to common expectation for a frustrated spin lattice.}, subject = {Halbleiteroberfl{\"a}che}, language = {en} } @phdthesis{Mueller2012, author = {M{\"u}ller, Andreas}, title = {Towards functional oxide heterostructures}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-72478}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2012}, abstract = {Oxide heterostructures attract a lot of attention as they display a vast range of physical phenomena like conductivity, magnetism, or even superconductivity. In most cases, these effects are caused by electron correlations and are therefore interesting for studying fundamental physics, but also in view of future applications. This thesis deals with the growth and characterization of several prototypical oxide heterostructures. Fe3O4 is highly ranked as a possible spin electrode in the field of spintronics. A suitable semiconductor for spin injection in combination with Fe3O4 is ZnO due to its oxide character and a sufficiently long spin coherence length. Fe3O4 has been grown successfully on ZnO using pulsed laser deposition and molecular beam epitaxy by choosing the oxygen partial pressure adequately. Here, a pressure variation during growth reduces an FeO-like interface layer. Fe3O4 films grow in an island-like growth mode and are structurally nearly fully relaxed, exhibiting the same lattice constants as the bulk materials. Despite the presence of a slight oxygen off-stoichiometry, indications of the Verwey transition hint at high-quality film properties. The overall magnetization of the films is reduced compared to bulk Fe3O4 and a slow magnetization behavior is observed, most probably due to defects like anti-phase boundaries originating from the initial island growth. LaAlO3/SrTiO3 heterostructures exhibit a conducting interface above a critical film thickness, which is most likely explained by an electronic reconstruction. In the corresponding model, the potential built-up owing to the polar LaAlO3 overlayer is compensated by a charge transfer from the film surface to the interface. The properties of these heterostructures strongly depend on the growth parameters. It is shown for the first time, that it is mainly the total pressure which determines the macroscopic sample properties, while it is the oxygen partial pressure which controls the amount of charge carriers near the interface. Oxygen-vacancy-mediated conductivity is found for too low oxygen pressures. A too high total pressure, however, destroys interface conductivity, most probably due to a change of the growth kinetics. Post-oxidation leads to a metastable state removing the arbitrariness in controlling the electronic interface properties by the oxygen pressure during growth. LaVO3/SrTiO3 heterostructures exhibit similar behavior compared to LaAlO3/SrTiO3 when it comes to a thickness-dependent metal-insulator transition. But in contrast to LaAlO3, LaVO3 is a Mott insulator exhibiting strong electron correlations. Films have been grown by pulsed laser deposition. Layer-by-layer growth and a phase-pure pervoskite lattice structure is observed, indicating good structural quality of the film and the interface. An electron-rich layer is found near the interface on the LaVO3 side for conducting LaVO3/SrTiO3. This could be explained by an electronic reconstruction within the film. The electrostatic doping results in a band-filling-controlled metal-insulator transition without suffering from chemical impurities, which is unavoidable in conventional doping experiments.}, subject = {Oxide}, language = {en} } @phdthesis{Falge2012, author = {Falge, Mirjam}, title = {Dynamik gekoppelter Elektronen-Kern-Systeme in Laserfeldern}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-72889}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2012}, abstract = {Die vorliegende Arbeit besch{\"a}ftigt sich mit der theoretischen Untersuchung zweier Themenkomplexe: der Erzeugung Hoher Harmonischer in Molek{\"u}len und dem Einfluss von gekoppelter Elektronen-Kern-Dynamik auf Ultrakurzpuls-Ionisationsprozesse und Quantenkontrolle. W{\"a}hrend bei der Untersuchung der Hohen Harmonischen die Auswirkungen der Kernbewegung auf die Spektren im Mittelpunkt des Interesses stehen, wird bei der Analyse der gekoppelter Elektronen-Kern-Dynamik das Hauptaugenmerk auf die nicht-adiabatischen Effekte gerichtet, die auftreten, wenn Kern- und Elektronenbewegung sich nicht, wie es im Rahmen der Born-Oppenheimer-N{\"a}herung in der Quantenchemie h{\"a}ufig angenommen wird, voneinander trennen lassen.}, subject = {Nichtadiabatischer Prozess}, language = {de} }