@article{MargapotiAlvesMahapatraetal.2012, author = {Margapoti, E. and Alves, F. M. and Mahapatra, S. and Lopez-Richard, V. and Worschech, L. and Brunner, K. and Qu, F. and Destefani, C. and Menendez-Proupin, E. and Bougerol, C. and Forchel, A. and Marques, G. E.}, title = {Paramagnetic shift in thermally annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots}, series = {New Journal of Physics}, volume = {14}, journal = {New Journal of Physics}, number = {043038}, doi = {10.1088/1367-2630/14/4/043038}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-133294}, year = {2012}, abstract = {The photoluminescence of annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots (QDs) under the influence of an external magnetic field has been studied in this paper. Post-growth annealing was performed for different annealing times. Above a critical annealing time, the QD luminescence shows a pronounced red-shift of the Zeeman split magnetic subcomponents. This observation is in contrast to the blue-shift caused by the diamagnetic behavior that is usually observed in non-magnetic QDs. We attribute our finding to the paramagnetism caused by the mixing of heavy and light hole states. Hence, post-growth thermal annealing treatment might be employed to render undoped epitaxial QDs intrinsically magnetic in a controlled manner. Two theoretical models were developed: a few-particle model to account for excitonic complex effects and a multiband calculation that describes the valence band hybridization. Contrasting the two models allowed us to unambiguously elucidate the nature of such an effect.}, language = {en} } @article{AstakhovFuchsSoltamovetal.2013, author = {Astakhov, Georgy V. and Fuchs, F. and Soltamov, V. A. and V{\"a}th, S. and Baranov, P. G. and Mokhov, E. N. and Dyakonov, V.}, title = {Silicon carbide light-emitting diode as a prospective room temperature source for single photons}, series = {Scientific Reports}, journal = {Scientific Reports}, doi = {10.1038/srep01637}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-96308}, year = {2013}, abstract = {Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.}, language = {en} } @article{MaassBentmannSeibeletal.2016, author = {Maaß, Henriette and Bentmann, Hendrik and Seibel, Christoph and Tusche, Christian and Eremeev, Sergey V. and Peixoto, Thiago R.F. and Tereshchenko, Oleg E. and Kokh, Konstantin A. and Chulkov, Evgueni V. and Kirschner, J{\"u}rgen and Reinert, Friedrich}, title = {Spin-texture inversion in the giant Rashba semiconductor BiTeI}, series = {Nature Communications}, volume = {7}, journal = {Nature Communications}, doi = {10.1038/ncomms11621}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-173769}, year = {2016}, abstract = {Semiconductors with strong spin-orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimentally challenging and yet essential for exploiting spin-orbit effects for spin manipulation. Here we employ a state-of-the-art photoelectron momentum microscope with a multichannel spin filter to directly image the spin texture of the layered polar semiconductor BiTeI within the full two-dimensional momentum plane. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the valence and conduction band electrons in BiTeI have spin textures of opposite chirality and of pronounced orbital dependence beyond the standard Rashba model, the latter giving rise to strong optical selection-rule effects on the photoelectron spin polarization. These observations open avenues for spin-texture manipulation by atomic-layer and charge carrier control in polar semiconductors.}, language = {en} } @article{MotykaDyksikRyczkoetal.2016, author = {Motyka, M. and Dyksik, M. and Ryczko, K. and Weih, R. and Dallner, M. and H{\"o}fling, S. and Kamp, M. and Sęk, G. and Misiewicz, J.}, title = {Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing}, series = {Applied Physics Letters}, volume = {108}, journal = {Applied Physics Letters}, number = {10}, doi = {10.1063/1.4943193}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-189795}, year = {2016}, abstract = {Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.}, language = {en} } @article{TuanScharfŽutičetal.2017, author = {Tuan, Dinh Van and Scharf, Benedikt and Žutič, Igor and Dery, Hanan}, title = {Marrying excitons and plasmons in monolayer transition-metal dichalcogenides}, series = {Physical Review X}, volume = {7}, journal = {Physical Review X}, number = {4}, doi = {10.1103/PhysRevX.7.041040}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-173030}, year = {2017}, abstract = {Just as photons are the quanta of light, plasmons are the quanta of orchestrated charge-density oscillations in conducting media. Plasmon phenomena in normal metals, superconductors, and doped semiconductors are often driven by long-wavelength Coulomb interactions. However, in crystals whose Fermi surface is comprised of disconnected pockets in the Brillouin zone, collective electron excitations can also attain a shortwave component when electrons transition between these pockets. In this work, we show that the band structure of monolayer transition-metal dichalcogenides gives rise to an intriguing mechanism through which shortwave plasmons are paired up with excitons. The coupling elucidates the origin for the optical sideband that is observed repeatedly in monolayers of WSe\(_2\) and WS\(_2\) but not understood. The theory makes it clear why exciton-plasmon coupling has the right conditions to manifest itself distinctly only in the optical spectra of electron-doped tungsten-based monolayers.}, language = {en} } @article{SuchomelBrodbeckLiewetal.2017, author = {Suchomel, H. and Brodbeck, S. and Liew, T. C. H. and Amthor, M. and Klaas, M. and Klembt, S. and Kamp, M. and H{\"o}fling, S. and Schneider, C.}, title = {Prototype of a bistable polariton field-effect transistor switch}, series = {Scientific Reports}, volume = {7}, journal = {Scientific Reports}, number = {5114}, doi = {10.1038/s41598-017-05277-1}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-158323}, year = {2017}, abstract = {Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior.}, language = {en} } @article{PeixotoBentmannRuessmannetal.2020, author = {Peixoto, Thiago R. F. and Bentmann, Hendrik and R{\"u}ßmann, Philipp and Tcakaev, Abdul-Vakhab and Winnerlein, Martin and Schreyeck, Steffen and Schatz, Sonja and Vidal, Raphael Crespo and Stier, Fabian and Zabolotnyy, Volodymyr and Green, Robert J. and Min, Chul Hee and Fornari, Celso I. and Maaß, Henriette and Vasili, Hari Babu and Gargiani, Pierluigi and Valvidares, Manuel and Barla, Alessandro and Buck, Jens and Hoesch, Moritz and Diekmann, Florian and Rohlf, Sebastian and Kall{\"a}ne, Matthias and Rossnagel, Kai and Gould, Charles and Brunner, Karl and Bl{\"u}gel, Stefan and Hinkov, Vladimir and Molenkamp, Laurens W. and Friedrich, Reinert}, title = {Non-local effect of impurity states on the exchange coupling mechanism in magnetic topological insulators}, series = {NPJ Quantum Materials}, volume = {5}, journal = {NPJ Quantum Materials}, doi = {10.1038/s41535-020-00288-0}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-230686}, year = {2020}, abstract = {Since the discovery of the quantum anomalous Hall (QAH) effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)\(_2\)Te\(_3\) and V:(Bi,Sb)\(_2\)Te\(_3\), the search for the magnetic coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic circular dichroism and density functional theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)\(_2\)Te\(_3\). State-of-the-art first-principles calculations find pronounced differences in their 3d densities of states, and show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results explain, in an unified picture, the origins of the observed magnetic properties, and establish the essential role of impurity-state-mediated exchange interactions in the magnetism of MTI.}, language = {en} }