@article{SyperekAndrzejewskiRudnoRudzińskietal.2017,
  author    = {Syperek, M. and Andrzejewski, J. and Rudno-Rudziński, W. and Maryński, A. and Sȩk, G. and Misiewicz, J. and Reithmaier, J. P. and Somers, A. and H{\"o}fling, S.},
  title     = {The issue of 0D-like ground state isolation in GaAs- and InP-based coupled quantum dots-quantum well systems},
  series = {Journal of Physics: Conference Series},
  volume    = {906},
  journal   = {Journal of Physics: Conference Series},
  number    = {1},
  issn      = {1742-6588},
  doi       = {10.1088/1742-6596/906/1/012019},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-262876},
  year      = {2017},
  abstract  = {The issue of quantum mechanical coupling between a semiconductor quantum dot and a quantum well is studied in two families of GaAs- and InP- based structures at cryogenic temperatures. It is shown that by tuning the quantum well parameters one can strongly disturb the 0D-character of the coupled system ground state, initially located in a dot. The out-coupling of either an electron or a hole state from the quantum dot confining potential is viewed by a significant elongation of the photoluminescence decay time constant. Band structure calculations show that in the GaAs-based coupled system at its ground state a hole remains isolated in the dot, whereas an electron gets delocalized towards the quantum well. The opposite picture is built for the ground state of a coupled system based on InP.},
  language  = {en}
}
@article{SuchomelBrodbeckLiewetal.2017,
  author    = {Suchomel, H. and Brodbeck, S. and Liew, T. C. H. and Amthor, M. and Klaas, M. and Klembt, S. and Kamp, M. and H{\"o}fling, S. and Schneider, C.},
  title     = {Prototype of a bistable polariton field-effect transistor switch},
  series = {Scientific Reports},
  volume    = {7},
  journal   = {Scientific Reports},
  number    = {5114},
  doi       = {10.1038/s41598-017-05277-1},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-158323},
  year      = {2017},
  abstract  = {Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior.},
  language  = {en}
}
@article{RudnoRudzińskiSyperekAndrezejewskietal.2017,
  author    = {Rudno-Rudziński, W. and Syperek, M. and Andrezejewski, J. and Maryński, A. and Misiewicz, J. and Somers, A. and H{\"o}fling, S. and Reithmaier, J. P. and Sęk, G.},
  title     = {Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 μm emission},
  series = {AIP Advances},
  volume    = {7},
  journal   = {AIP Advances},
  number    = {1},
  doi       = {10.1063/1.4975634},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-181787},
  year      = {2017},
  abstract  = {We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm. These quantum dashes (QDashes) are separated by a 2.3 nm-width barrier from an InGaAs quantum well (QW), lattice matched to InP. We have tailored quantum-mechanical coupling between the states confined in QDashes and a QW by changing the QW thickness. By combining modulation spectroscopy and photoluminescence excitation, we have determined the energies of all relevant optical transitions in the system and proven the carrier transfer from the QW to the QDashes, which is the fundamental requirement for the tunnel injection scheme. A transformation between 0D and mixed-type 2D-0D character of an electron and a hole confinement in the ground state of the hybrid system have been probed by time-resolved photoluminescence that revealed considerable changes in PL decay time with the QW width changes. The experimental discoveries have been explained by band structure calculations in the framework of the eight-band k·p model showing that they are driven by delocalization of the lowest energy hole state. The hole delocalization process from the 0D QDash confinement is unfavorable for optical devices based on such tunnel injection structures.},
  language  = {en}
}