@article{RazinskasBiagioniHecht2018,
  author    = {Razinskas, Gary and Biagioni, Paolo and Hecht, Bert},
  title     = {Limits of Kirchhoff's laws in plasmonics},
  series = {Scientific Reports},
  volume    = {8},
  journal   = {Scientific Reports},
  number    = {1921},
  doi       = {10.1038/s41598-018-20239-x},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-176080},
  year      = {2018},
  abstract  = {The validity of Kirchhoff's laws in plasmonic nanocircuitry is investigated by studying a junction of plasmonic two-wire transmission lines. We find that Kirchhoff's laws are valid for sufficiently small values of a phenomenological parameter κ relating the geometrical parameters of the transmission line with the effective wavelength of the guided mode. Beyond such regime, for large values of the phenomenological parameter, increasing deviations occur and the equivalent impedance description (Kirchhoff's laws) can only provide rough, but nevertheless useful, guidelines for the design of more complex plasmonic circuitry. As an example we investigate a system composed of a two-wire transmission line and a nanoantenna as the load. By addition of a parallel stub designed according to Kirchhoff's laws we achieve maximum signal transfer to the nanoantenna.},
  language  = {en}
}
@article{AstakhovFuchsSoltamovetal.2013,
  author    = {Astakhov, Georgy V. and Fuchs, F. and Soltamov, V. A. and V{\"a}th, S. and Baranov, P. G. and Mokhov, E. N. and Dyakonov, V.},
  title     = {Silicon carbide light-emitting diode as a prospective room temperature source for single photons},
  series = {Scientific Reports},
  journal   = {Scientific Reports},
  doi       = {10.1038/srep01637},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-96308},
  year      = {2013},
  abstract  = {Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.},
  language  = {en}
}