@phdthesis{Bauernfeind2023,
  author    = {Bauernfeind, Maximilian Josef Xaver},
  title     = {Epitaxy and Spectroscopy of Two-Dimensional Adatom Systems: the Elemental Topological Insulator Indenene on SiC},
  doi       = {10.25972/OPUS-31166},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-311662},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2023},
  abstract  = {Two-dimensional (2D) topological insulators are a new class of materials with properties that are promising for potential future applications in quantum computers. For example, stanene represents a possible candidate for a topological insulator made of Sn atoms arranged in a hexagonal lattice. However, it has a relatively fragile low-energy spectrum and sensitive topology. Therefore, to experimentally realize stanene in the topologically non-trivial phase, a suitable substrate that accommodates stanene without compromising these topological properties must be found. A heterostructure consisting of a SiC substrate with a buffer layer of adsorbed group-III elements constitutes a possible solution for this problem. In this work, 2D adatom systems of Al and In were grown epitaxially on SiC(0001) and then investigated structurally and spectroscopically by scanning tunneling microscopy (STM) and photoelectron spectroscopy. Al films in the high coverage regime \( (\Theta_{ML}\approx2\) ML\( ) \) exhibit unusually large, triangular- and rectangular-shaped surface unit cells. Here, the low-energy electron diffraction (LEED) pattern is brought into accordance with the surface topography derived from STM. Another Al reconstruction, the quasi-one-dimensional (1D) Al phase, exhibits a striped surface corrugation, which could be the result of the strain imprinted by the overlayer-substrate lattice mismatch. It is suggested that Al atoms in different surface areas can occupy hexagonal close-packed and face-centered cubic lattice sites, respectively, which in turn lead to close-packed transition regions forming the stripe-like corrugations. On the basis of the well-known herringbone reconstruction from Au(111), a first structural model is proposed, which fits well to the structural data from STM. Ultimately, however, thermal treatments of the sample could not generate lower coverage phases, i.e. in particular, a buffer layer structure. Strong metallic signatures are found for In high coverage films \( (\Theta_{ML}\approx3\) to \(2\) ML\() \) by scanning tunneling spectroscopy (STS) and angle-resolved photoelectron spectroscopy (ARPES), which form a \( (7\times7) \), \( (6\times4\sqrt{3}) \), and \( (4\sqrt{3}\times4\sqrt{3}) \) surface reconstruction. In all these In phases electrons follow the nearly-free electron model. Similar to the Al films, thermal treatments could not obtain the buffer layer system. Surprisingly, in the course of this investigation a triangular In lattice featuring a \( (1\times1) \) periodicity is observed to host massive Dirac-like bands at \( K/K^{\prime} \) in ARPES. Based on this strong electronic similarity with graphene at the Brillouin zone boundary, this new structure is referred to as \textit{indenene}. An extensive theoretical analysis uncovers the emergence of an electronic honeycomb network based on triangularly arranged In \textit{p} orbitals. Due to strong atomic spin-orbit coupling and a comparably small substrate-induced in-plane inversion symmetry breaking this material system is rendered topologically non-trivial. In indenene, the topology is intimately linked to a bulk observable, i.e., the energy-dependent charge accumulation sequence within the surface unit cell, which is experimentally exploited in STS to confirm the non-trivial topological character. The band gap at \( K/K^{\prime} \), a signature of massive Dirac fermions, is estimated by ARPES to approximately 125 meV. Further investigations by X-ray standing wave, STM, and LEED confirm the structural properties of indenene. Thus, this thesis presents the growth and characterization of the novel quantum spin Hall insulator material indenene.},
  subject      = {Dreiecksgitter},
  language  = {en}
}
@phdthesis{Fuchs2015,
  author    = {Fuchs, Franziska},
  title     = {Optical spectroscopy on silicon vacancy defects in silicon carbide},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-124071},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2015},
  abstract  = {This work sheds light on different aspects of the silicon vacancy in SiC: (1) Defect creation via irradiation is shown both with electrons and neutrons. Optical properties have been determined: the excitation of the vacancy is most efficient at excitation wavelengths between 720nm and 800nm. The PL decay yields a characteristic excited state lifetime of (6.3±0.6)ns. (2) Defect engineering, meaning the controlled creation of vacancies in SiC with varying neutron fluence. The defect density could be engineered over eight orders of magnitude. On the one hand, in the sample with highest emitter density, the huge PL signal could even be enhanced by factor of five via annealing mechanisms. On the other hand, in the low defect density samples, single defects with photostable room temperature NIR emission were doubtlessly proven. Their lifetime of around 7ns confirmed the value of the transient measurement. (3) Also electrical excitation of the defects has been demonstrated in a SiC LED structure. (4) The investigations revealed for the first time that silicon vacancies can even exist SiC nanocrystals down to sizes of about 60 nm. The defects in the nanocrystals show stable PL emission in the NIR and even magnetic resonance in the 600nm fraction. In conclusion, this work ascertains on the one hand basic properties of the silicon vacancy in silicon carbide. On the other hand, proof-of-principle measurements test the potential for various defect-based applications of the vacancy in SiC, and confirm the feasibility of e.g. electrically driven single photon sources or nanosensing applications in the near future.},
  subject      = {Siliciumcarbid},
  language  = {en}
}
@phdthesis{Kasper2021,
  author    = {Kasper, Christian Andreas},
  title     = {Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide},
  doi       = {10.25972/OPUS-23779},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-237797},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2021},
  abstract  = {In this work the creation of silicon vacancy spin defects in silicon carbide with predictable properties is demonstrated. Neutron and electron irradiation was used to create silicon vacancy ensembles and proton beam writing to create isolated vacancies at a desired position. The coherence properties of the created silicon vacancies as a function of the emitter density were investigated and a power-law function established. Sample annealing was implemented to increase the coherence properties of existing silicon vacancies. Further, spectral hole burning was used to implement absolute dc-magnetometry.},
  subject      = {St{\"o}rstelle},
  language  = {en}
}
@phdthesis{Simin2017,
  author    = {Simin, Dmitrij},
  title     = {Quantum Sensing with Highly Coherent Spin Centers in Silicon Carbide},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-156199},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2017},
  abstract  = {In the present work, the energetic structure and coherence properties of the silicon vacancy point defect in the technologically important material silicon carbide are extensively studied by the optically detected magnetic resonance (ODMR) technique in order to verify its high potential for various quantum applications. In the spin vacancy, unique attributes are arising from the C3v symmetry and the spin-3/2 state, which are not fully described by the standard Hamiltonian of the uniaxial model. Therefore, an advanced Hamiltonian, describing well the appearing phenomena is established and the relevant parameters are experimentally determined. Utilizing these new accomplishments, several quantum metrology techniques are proposed. First, a vector magnetometry scheme, utilizing the appearance of four ODMR lines, allows for simultaneous detection of the magnetic field strength and the tilting angle of the magnetic field from the symmetry axis of the crystal. The second magnetometry protocol utilizes the appearance of energetic level anticrossings (LAC) in the ground state (GS) energy levels. Relying only on the change in photoluminescence in the vicinity of this GSLACs, this all-optical method does not require any radio waves and hence provides a much easier operation with less error sources as for the common magnetometry schemes utilizing quantum points. A similar all-optical method is applied for temperature sensing, utilizing the thermal shift of the zero field splitting and consequently the anticrossing in the excited state (ES). Since the GSLACs show no dependence on temperature, the all-optical magnetometry and thermometry (utilizing the ESLACs) can be conducted subsequently on the same defect. In order to quantify the achievable sensitivity of quantum metrology, as well as to prove the potential of the Si-vacancy in SiC for quantum processing, the coherence properties are investigated by the pulsed ODMR technique. The spin-lattice relaxation time T1 and the spin-spin relaxation time T2 are thoroughly analyzed for their dependence on the external magnetic field and temperature. For actual sensing implementations, it is crucial to obtain the best signal-to-noise ratio without loss in coherence time. Therefore, the irradiation process, by which the defects are created in the crystal, plays a decisive role in the device performance. In the present work, samples irradiated with electrons or neutrons with different fluences and energies, producing different defect densities, are analyzed in regard to their T1 and T2 times at room temperature. Last but not least, a scheme to substantially prolong the T2 coherence time by locking the spin polarization with the dynamic decoupling Carr-Purcell-Meiboom-Gill (CPMG) pulse sequence is applied.},
  subject      = {Siliciumcarbid},
  language  = {en}
}