@article{MotykaDyksikRyczkoetal.2016,
  author    = {Motyka, M. and Dyksik, M. and Ryczko, K. and Weih, R. and Dallner, M. and H{\"o}fling, S. and Kamp, M. and Sęk, G. and Misiewicz, J.},
  title     = {Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing},
  series = {Applied Physics Letters},
  volume    = {108},
  journal   = {Applied Physics Letters},
  number    = {10},
  doi       = {10.1063/1.4943193},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-189795},
  year      = {2016},
  abstract  = {Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.},
  language  = {en}
}