@article{PollingerSchmittSanderetal.2017, author = {Pollinger, Florian and Schmitt, Stefan and Sander, Dirk and Tian, Zhen and Kirschner, J{\"u}rgen and Vrdoljak, Pavo and Stadler, Christoph and Maier, Florian and Marchetto, Helder and Schmidt, Thomas and Sch{\"o}ll, Achim and Umbach, Eberhard}, title = {Nanoscale patterning, macroscopic reconstruction, and enhanced surface stress by organic adsorption on vicinal surfaces}, series = {New Journal of Physics}, volume = {19}, journal = {New Journal of Physics}, doi = {10.1088/1367-2630/aa55b8}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-171947}, year = {2017}, abstract = {Self-organization is a promising method within the framework of bottom-up architectures to generate nanostructures in an efficient way. The present work demonstrates that self- organization on the length scale of a few to several tens of nanometers can be achieved by a proper combination of a large (organic) molecule and a vicinal metal surface if the local bonding of the molecule on steps is significantly stronger than that on low-index surfaces. In this case thermal annealing may lead to large mass transport of the subjacent substrate atoms such that nanometer-wide and micrometer-long molecular stripes or other patterns are being formed on high-index planes. The formation of these patterns can be controlled by the initial surface orientation and adsorbate coverage. The patterns arrange self-organized in regular arrays by repulsive mechanical interactions over long distances accompanied by a significant enhancement of surface stress. We demonstrate this effect using the planar organic molecule PTCDA as adsorbate and Ag(10 8 7) and Ag(775)surfaces as substrate. The patterns are directly observed by STM, the formation of vicinal surfaces is monitored by highresolution electron diffraction, the microscopic surface morphology changes are followed by spectromicroscopy, and the macroscopic changes of surface stress are measured by a cantilever bending method. The in situ combination of these complementary techniques provides compelling evidence for elastic interaction and a significant stress contribution to long-range order and nanopattern formation.}, language = {en} } @article{ElsaesserSchieblMukhinetal.2017, author = {Els{\"a}sser, S. and Schiebl, M. and Mukhin, A. A. and Balbashov, A. M. and Pimenov, A. and Geurts, J.}, title = {Impact of temperature-dependent local and global spin order in \(R\)MnO\(_3\) compounds for spin-phonon coupling and electromagnon activity}, series = {New Journal of Physics}, volume = {19}, journal = {New Journal of Physics}, doi = {10.1088/1367-2630/aa55ed}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-171978}, year = {2017}, abstract = {The orthorhombic rare-earth manganite compounds \(R\)MnO\(_3\) show a global magnetic order for \(T\) < \(T\)\(_N\), and several representatives are multiferroic with a cycloidal spin ground state order for \(T\) < \(T\)\(_c\)\(_y\)\(_c\)\(_l\) < \(T\)\(_N\) \(\approx\) 40 K. We deduce from the temperature dependence of spin-phonon coupling in Raman spectroscopy for a series of \(R\)MnO\(_3\) compounds that their spin order locally persists up to about twice \(T\)\(_N\). Along the same line, our observation of the persistence of the electromagnon in GdMnO\(_3\) up to \(T\) \(\approx\) 100 K is attributed to a local cycloidal spin order for \(T\) > \(T\)\(_c\)\(_y\)\(_c\)\(_l\), in contrast to the hitherto assumed incommensurate sinusoidal phase in the intermediate temperature range. The development of the magnetization pattern can be described in terms of an order-disorder transition at \(T\)\(_c\)\(_y\)\(_c\)\(_l\) within a pseudospin model of localized spin cycloids with opposite chirality.}, language = {en} } @article{SanchezThierschmannMolenkamp2017, author = {S{\´a}nchez, Rafael and Thierschmann, Holger and Molenkamp, Laurens W.}, title = {Single-electron thermal devices coupled to a mesoscopic gate}, series = {New Journal of Physics}, volume = {19}, journal = {New Journal of Physics}, doi = {10.1088/1367-2630/aa8b94}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-172982}, year = {2017}, abstract = {We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations.}, language = {en} } @phdthesis{Then2017, author = {Then, Patrick}, title = {Waveguide-based single molecule detection in flow}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-140548}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2017}, abstract = {In this work fluorescence-based single molecule detection at low concetration is investigated, with an emphasis on the usage of active transport and waveguides. Active transport allows to overcome the limits of diffusion-based systems in terms of the lowest detectable threshold of concentration. The effect of flow in single molecule experiments is investigated and a theoretical model is derived for laminar flow. Waveguides on the other hand promise compact detection schemes and show great potential for their possible integration into lab-on-a-chip applications. Their properties in single molecule experiments are analyzed with help of a method based on the reciprocity theorem of electromagnetic theory.}, subject = {Optik}, language = {en} } @article{SkryabinKartashovEgorovetal.2017, author = {Skryabin, D.V. and Kartashov, Y.V. and Egorov, O.A. and Sich, M. and Chana, J.K. and Tapia Rodriguez, L.E. and Walker, P.M. and Clarke, E. and Royall, B. and Skolnick, M.S. and Krizhanovskii, D.N.}, title = {Backward Cherenkov radiation emitted by polariton solitons in a microcavity wire}, series = {Nature Communications}, volume = {8}, journal = {Nature Communications}, doi = {10.1038/s41467-017-01751-6}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-173046}, year = {2017}, abstract = {Exciton-polaritons in semiconductor microcavities form a highly nonlinear platform to study a variety of effects interfacing optical, condensed matter, quantum and statistical physics. We show that the complex polariton patterns generated by picosecond pulses in microcavity wire waveguides can be understood as the Cherenkov radiation emitted by bright polariton solitons, which is enabled by the unique microcavity polariton dispersion, which has momentum intervals with positive and negative group velocities. Unlike in optical fibres and semiconductor waveguides, we observe that the microcavity wire Cherenkov radiation is predominantly emitted with negative group velocity and therefore propagates backwards relative to the propagation direction of the emitting soliton. We have developed a theory of the microcavity wire polariton solitons and of their Cherenkov radiation and conducted a series of experiments, where we have measured polariton-soliton pulse compression, pulse breaking and emission of the backward Cherenkov radiation.}, language = {en} } @article{RudnoRudzińskiSyperekAndrezejewskietal.2017, author = {Rudno-Rudziński, W. and Syperek, M. and Andrezejewski, J. and Maryński, A. and Misiewicz, J. and Somers, A. and H{\"o}fling, S. and Reithmaier, J. P. and Sęk, G.}, title = {Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 μm emission}, series = {AIP Advances}, volume = {7}, journal = {AIP Advances}, number = {1}, doi = {10.1063/1.4975634}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-181787}, year = {2017}, abstract = {We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm. These quantum dashes (QDashes) are separated by a 2.3 nm-width barrier from an InGaAs quantum well (QW), lattice matched to InP. We have tailored quantum-mechanical coupling between the states confined in QDashes and a QW by changing the QW thickness. By combining modulation spectroscopy and photoluminescence excitation, we have determined the energies of all relevant optical transitions in the system and proven the carrier transfer from the QW to the QDashes, which is the fundamental requirement for the tunnel injection scheme. A transformation between 0D and mixed-type 2D-0D character of an electron and a hole confinement in the ground state of the hybrid system have been probed by time-resolved photoluminescence that revealed considerable changes in PL decay time with the QW width changes. The experimental discoveries have been explained by band structure calculations in the framework of the eight-band k·p model showing that they are driven by delocalization of the lowest energy hole state. The hole delocalization process from the 0D QDash confinement is unfavorable for optical devices based on such tunnel injection structures.}, language = {en} } @article{RyczkoMisiewiczHoflingetal.2017, author = {Ryczko, K. and Misiewicz, J. and Hofling, S. and Kamp, M. and Sęk, G.}, title = {Optimizing the active region of interband cascade lasers for passive mode-locking}, series = {AIP Advances}, volume = {7}, journal = {AIP Advances}, number = {1}, doi = {10.1063/1.4973937}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-181790}, year = {2017}, abstract = {The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into "W-shaped" type II QWs offers significant difference in optical transitions' oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.}, language = {en} }