@phdthesis{Fischer2023,
  author    = {Fischer, Mathias},
  title     = {Transient Phenomena and Ionic Kinetics in Hybrid Metal Halide Perovskite Solar Cells},
  doi       = {10.25972/OPUS-32220},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-322204},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2023},
  abstract  = {The fact that photovoltaics is a key technology for climate-neutral energy production can be taken as a given. The question to what extent perovskite will be used for photovoltaic technologies has not yet been fully answered. From a photophysical point of view, however, it has the potential to make a useful contribution to the energy sector. However, it remains to be seen whether perovskite-based modules will be able to compete with established technologies in terms of durability and cost efficiency. The additional aspect of ionic migration poses an additional challenge. In the present work, primarily the interaction between ionic redistribution, capacitive properties and recombination dynamics was investigated. This was done using impedance spectroscopy, OCVD and IV characteristics as well as extensive numerical drift-diffusion simulations. The combination of experimental and numerical methods proved to be very fruitful. A suitable model for the description of solar cells with respect to mobile ions was introduced in chapter 4.4. The formal mathematical description of the model was transferred by a non-dimensionalization and suitable numerically solvable form. The implementation took place in the Julia language. By intelligent use of structural properties of the sparse systems of equations, automatic differentiation and the use of efficient integration methods, the simulation tool is not only remarkably fast in finding the solution, but also scales quasi-linearly with the grid resolution. The software package was released under an open source license. In conventional semiconductor diodes, capacitance measurements are often used to determine the space charge density. In the first experimental chapter 5, it is shown that although this is also possible for the ionic migration present in perovskites, it cannot be directly understood as doping related, since the space charge distribution strongly depends on the preconditions and can be manipulated by an externally applied voltage. The exact form of this behavior depends on the perovskite composition. This shows, among other things, that experimental results can only be interpreted within the framework of conventional semiconductors to a very limited extent. Nevertheless, the built-in 99 potential of the solar cell can be determined if the experiments are carried out properly. A statement concerning the type and charge of the mobile ions is not possible without further effort, while their number can be determined. The simulations were applied to experimental data in chapter 6. Thus, it could be shown that mobile ions make a significant contribution to the OCVD of perovskite solar cells. j-V characteristics and OCVD transients measured as a function of temperature and illumination intensities could be quantitatively modeled simultaneously using a single global set of parameters. By the simulations it was further possible to derive a simple experimental procedure to determine the concentration and the diffusivity of the mobile ions. The possibility of describing different experiments in a uniform temperaturedependent manner strongly supports the model of mobile ions in perovskites. In summary, this work has made an important contribution to the elucidation of ionic contributions to the (photo)electrical properties of perovskite solar cells. Established experimental techniques for conventional semiconductors have been reinterpreted with respect to ionic mass transport and new methods have been proposed to draw conclusions on the properties for ionic transport. As a result, the published simulation tools can be used for a number of further studies.},
  subject      = {Simulation},
  language  = {en}
}
@phdthesis{Hauschild2015,
  author    = {Hauschild, Dirk},
  title     = {Electron and soft x-ray spectroscopy of indium sulfide buffer layers and the interfaces in Cu(In,Ga)(S,Se)2-based thin-film solar cells},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-126766},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2015},
  abstract  = {In this thesis, thin-film solar cells on the basis of Cu(In,Ga)(S,Se)2 (CIGSSe) were investigated. Until today, most high efficient CIGSSe-based solar cells use a toxic and wetchemical deposited CdS buffer layer, which doesn't allow a dry inline production. However, a promising and well-performing alternative buffer layer, namely indium sulfide, has been found which doesn't comprise these disadvantages. In order to shed light on these well-performing devices, the surfaces and in particular the interfaces which play a major role for the charge carrier transport are investigated in the framework of this thesis. Both, the chemical and electronic properties of the solar cells' interfaces were characterized. In case of the physical vapor deposition of an InxSy-based buffer layer, the cleaning step of the CdS chemical-bath deposition is not present and thus changes of the absorber surface have to be taken into account. Therefore, adsorbate formation, oxidation, and segregation of absorber elements in dependence of the storing temperature and the humidity are investigated in the first part of this thesis. The efficiencies of CIGSSe-based solar cells with an InxSy buffer layer depend on the nominal indium concentration x and display a maximum for x = 42 \%. In this thesis, InxSy samples with a nominal indium concentration of 40.2\% ≤ x ≤ 43.2\% were investigated by surface-sensitive and surface-near bulk-sensitive techniques, namely with photoemission spectroscopy (PES) and x-ray emission spectroscopy (XES). The surfaces of the films were found to be sulfur-poor and indium-rich in comparison with stoichiometric In2S3. Moreover, a direct determination of the band alignment at the InxSy/CISSe interface in dependence of the nominal indium concentration x was conducted with the help of PES and inverse PES (IPES) and a flat band alignment was found for x = 42 \%. In order to study the impact of a heat treatment as it occurs during subsequent cell process steps, the indium sulfide-buffered absorbers were annealed for 30 minutes under UHV conditions at 200 °C after the initial data set was taken. Besides a reported enhanced solar cell performance, a significant copper diffusion from the absorber into the buffer layer takes place due to the thermal treatment. Accordingly, the impact of the copper diffusion on the hidden InxSy/CISSe interface was discussed and for x = 40.2\% a significant cliff (downwards step in the conduction band) is observed. For increasing x, the alignment in the conduction band turns into a small upwards step (spike) for the region 41\% ≤ x ≤ 43.2\%. This explains the optimal solar cell performance for this indium contents. In a further step, the sodium-doped indium sulfide buffer which leads to significantly higher efficient solar cells was investigated. It was demonstrated by PES/IPES that the enhanced performance can be ascribed to a significant larger surface band gap in comparison with undoped InxSy. The occurring spike in the Na:InxSy/CISSe band alignment gets reduced due to a Se diffusion induced by the thermal treatment. Furthermore, after the thermal treatment the sodium doped indium sulfide layer experiences a copper diffusion which is reduced by more than a factor of two compared to pure InxSy. Next, the interface between the Na:InxSy buffer layer and the i-ZnO (i = intrinsic, non-deliberately doped), as a part of the transparent front contact was analyzed. The i-ZnO/Na:InxSy interface shows significant interdiffusion, leading to the formation of, e.g., ZnS and hence to a reduction of the nominal cliff in the conduction band alignment. In the last part of this thesis, the well-established surface-sensitive reflective electron energy loss spectroscopy (REELS) was utilized to study the CIGSSe absorber, the InxSy buffer, and annealed InxSy buffer surfaces. By fitting the characteristic inelastic scattering cross sections λK(E) with Drude-Lindhard oscillators the dielectric function was identified. The determined dielectric functions are in good agreement with values from bulk-sensitive optical measurements on indium sulfide layers. In contrast, for the chalcopyrite-based absorber significant differences appear. In particular, a substantial larger surface band gap of the CIGSSe surface of E^Ex_Gap = (1.4±0.2) eV in comparison with bulk values is determined. This provides for the first time an independent verification of earlier PES/IPES results. Finally, the electrons' inelastic mean free paths l for the three investigated surfaces are compared for different primary energies with theoretical values and the universal curve.},
  subject      = {Photoelektronenspektroskopie},
  language  = {en}
}