@article{RyczkoMisiewiczHoflingetal.2017,
  author    = {Ryczko, K. and Misiewicz, J. and Hofling, S. and Kamp, M. and Sęk, G.},
  title     = {Optimizing the active region of interband cascade lasers for passive mode-locking},
  series = {AIP Advances},
  volume    = {7},
  journal   = {AIP Advances},
  number    = {1},
  doi       = {10.1063/1.4973937},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-181790},
  year      = {2017},
  abstract  = {The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into "W-shaped" type II QWs offers significant difference in optical transitions' oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.},
  language  = {en}
}