@article{WyborskiPodemskiWrońskietal.2022,
  author    = {Wyborski, Paweł and Podemski, Paweł and Wroński, Piotr Andrzej and Jabeen, Fauzia and H{\"o}fling, Sven and Sęk, Grzegorz},
  title     = {Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer},
  series = {Materials},
  volume    = {15},
  journal   = {Materials},
  number    = {3},
  issn      = {1996-1944},
  doi       = {10.3390/ma15031071},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-297037},
  year      = {2022},
  abstract  = {We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.},
  language  = {en}
}
@article{SanchezThierschmannMolenkamp2017,
  author    = {S{\´a}nchez, Rafael and Thierschmann, Holger and Molenkamp, Laurens W.},
  title     = {Single-electron thermal devices coupled to a mesoscopic gate},
  series = {New Journal of Physics},
  volume    = {19},
  journal   = {New Journal of Physics},
  doi       = {10.1088/1367-2630/aa8b94},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-172982},
  year      = {2017},
  abstract  = {We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations.},
  language  = {en}
}
@article{LeeSongHanetal.2015,
  author    = {Lee, Eun-Hye and Song, Jin-Dong and Han, Il-Ki and Chang, Soo-Kyung and Langer, Fabian and H{\"o}fling, Sven and Forchel, Alfred and Kamp, Martin and Kim, Jong-Su},
  title     = {Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling},
  series = {Nanoscale Research Letters},
  volume    = {10},
  journal   = {Nanoscale Research Letters},
  number    = {114},
  doi       = {10.1186/s11671-015-0826-2},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-143692},
  year      = {2015},
  abstract  = {The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.},
  language  = {en}
}
@article{ThierschmannHenkeKnorretal.2013,
  author    = {Thierschmann, H. and Henke, M. and Knorr, J. and Maier, L. and Heyn, C. and Hansen, W. and Buhmann, H. and Molenkamp, L. W.},
  title     = {Diffusion thermopower of a serial double quantum dot},
  series = {New Journal of Physics},
  volume    = {15},
  journal   = {New Journal of Physics},
  number    = {123010},
  doi       = {10.1088/1367-2630/15/12/123010},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-129714},
  year      = {2013},
  abstract  = {We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference 1T = (20±10)mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.},
  language  = {en}
}