@phdthesis{Schreyeck2016,
  author    = {Schreyeck, Steffen},
  title     = {Molecular Beam Epitaxy and Characterization of Bi-Based V\(_2\)VI\(_3\) Topological Insulators},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-145812},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2016},
  abstract  = {The present thesis is addressed to the growth and characterization of Bi-based V2VI3 topological insulators (TIs). The TIs were grown by molecular beam epitaxy (MBE) on differently passivated Si(111) substrates, as well as InP(111) substrates. This allows the study of the influence of the substrate on the structural and electrical properties of the TIs. The Bi2Se3 layers show a change of mosaicity-tilt and -twist for growth on the differently prepared Si(111) substrates, as well as a significant increase of crystalline quality for growth on the lateral nearly lattice matched InP(111). The rocking curve FWHMs observed for thick layers grown on InP are comparable to these of common zincblende layers, which are close to the resolution limit of standard high resolution X-ray diffraction (HRXRD) setups. The unexpected high structural crystalline quality achieved in this material system is remarkable due to the presence of weak van der Waals bonds between every block of five atomic layers, i.e. a quintuple layer (QL), in growth direction. In addition to the mosaicity also twin domains, present in films of the V2VI3 material system, are studied. The twin defects are observed in Bi2Se3 layers grown on Si(111) and lattice matched InP(111) suggesting that the two dimensional surface lattice of the substrates can not determine the stacking order ABCABC... or ACBACB... in locally separated growth seeds. Therefore the growth on misoriented and rough InP(111) is analyzed. The rough InP(111) with its facets within a hollow exceeding the height of a QL is able to provide its stacking information to the five atomic layers within a QL. By varying the roughness of the InP substrate surface, due to thermal annealing, the influence on the twinning within the layer is confirmed resulting in a complete suppression of twin domains on rough InP(111). Focusing on the electrical properties of the Bi2Se3 films, the increased structural quality for films grown on lattice matched flat InP(111)B results in a marginal reduction of carrier density by about 10\% compared to the layers grown on H-passivated Si(111), whereas the suppression of twin domains for growth on rough InP(111)B resulted in a reduction of carrier density by an order of magnitude. This implies, that the twin domains are a main crystal defect responsible for the high carrier density in the presented Bi2Se3 thin films. Besides the binary Bi2Se3 also alloys with Sb and Te are fabricated to examine the influence of the compound specific point defects on the carrier density. Therefore growth series of the ternary materials Bi2Te(3-y)Se(y), Bi(2-x)Sb(x)Se3, and Bi(2-x)Sb(x)Te3, as well as the quaternary Bi(2-x)Sb(x)Te(3-y)Se(y) are studied. To further reduce the carrier density of twin free Bi2Se3 layers grown on InP(111)B:Fe a series of Bi(2-x)Sb(x)Se3 alloys were grown under comparable growth conditions. This results in a reduction of the carrier density with a minimum in the composition range of about x=0.9-1.0. The Bi(2-x)Sb(x)Te3 alloys exhibit a pn-transition, due to the dominating n-type and p-type point defects in its binary compounds, which is determined to reduce the bulk carrier density enabling the study the TI surface states. This pn-transition plays a significant role in realizing predicted applications and exotic effects, such as the quantum anomalous Hall effect. The magnetic doping of topological insulators with transition metals is studied by incorporating Cr and V in the alloy Bi(2-x)Sb(x)Te3 by codeposition. The preferential incorporation of Cr on group-V sites is confirmed by EDX and XRD, whereas the incorporation of Cr reduces the crystalline quality of the layer. Magnetotransport measurements of the Cr-doped TIs display an anomalous Hall effect confirming the realization of a magnetic TI thin film. The quantum anomalous Hall effect is observed in V-doped Bi(2-x)Sb(x)Te3, where the V-doping results in higher Curie temperatures, as well as higher coercive fields compared to the Cr-doping of the TIs. Moreover the present thesis contributes to the understanding of the role of the substrate concerning the crystalline quality of van der Waals bonded layers, such as the V2VI3 TIs, MoS2 and WoTe2. Furthermore, the fabrication of the thin film TIs Bi(2-x)Sb(x)Te(3-y)Se(y) in high crystalline quality serves as basis to explore the physics of topological insulators.},
  subject      = {Bismutverbindungen},
  language  = {en}
}
@article{RamlerFantuzziGeistetal.2021,
  author    = {Ramler, Jaqueline and Fantuzzi, Felipe and Geist, Felix and Hanft, Anna and Braunschweig, Holger and Engels, Bernd and Lichtenberg, Crispin},
  title     = {The dimethylbismuth cation: entry into dative Bi-Bi bonding and unconventional methyl exchange},
  series = {Angewandte Chemie International Edition},
  volume    = {60},
  journal   = {Angewandte Chemie International Edition},
  doi       = {10.1002/anie.202109545},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-256543},
  pages     = {24388-24394},
  year      = {2021},
  abstract  = {The dimethyl bismuth cation, [BiMe\(_2\)(SbF\(_6\))], has been isolated and characterized. Reaction with BiMe\(_3\) allows access to the first compound featuring Bi→Bi donor-acceptor bonding. In solution, dynamic behavior with methyl exchange via an unusual S\(_E\)2 mechanism is observed, underlining the unique properties of bismuth species as soft Lewis acids with the ability to undergo reversible Bi-C bond cleavage.},
  language  = {en}
}
@article{RamlerLichtenberg2020,
  author    = {Ramler, Jacqueline and Lichtenberg, Crispin},
  title     = {Molecular Bismuth Cations: Assessment of Soft Lewis Acidity},
  series = {Chemistry - A European Journal},
  volume    = {26},
  journal   = {Chemistry - A European Journal},
  number    = {45},
  doi       = {10.1002/chem.202001674},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-225808},
  pages     = {10250 -- 10258},
  year      = {2020},
  abstract  = {Three-coordinate cationic bismuth compounds [Bi(diaryl)(EPMe\(_{3}\))][SbF\(_{6}\)] have been isolated and fully characterized (diaryl=[(C\(_{6}\)H\(_{4}\))\(_{2}\)C\(_{2}\)H\(_{1}\)]\(^{2-}\), E=S, Se). They represent rare examples of molecular complexes with Bi⋅⋅⋅EPR\(_{3}\) interactions (R=monoanionic substituent). The \(^{31}\)P NMR chemical shift of EPMe3 has been found to be sensitive to the formation of LA⋅⋅⋅EPMe\(_{3}\) Lewis acid/base interactions (LA=Lewis acid). This corresponds to a modification of the Gutmann-Beckett method and reveals information about the hardness/softness of the Lewis acid under investigation. A series of organobismuth compounds, bismuth halides, and cationic bismuth species have been investigated with this approach and compared to traditional group 13 and cationic group 14 Lewis acids. Especially cationic bismuth species have been shown to be potent soft Lewis acids that may prefer Lewis pair formation with a soft (S/Se-based) rather than a hard (O/N-based) donor. Analytical techniques applied in this work include (heteronuclear) NMR spectroscopy, single-crystal X-ray diffraction analysis, and DFT calculations.},
  language  = {en}
}
@article{RamlerKrummenacherLichtenberg2020,
  author    = {Ramler, Jacqueline and Krummenacher, Ivo and Lichtenberg, Crispin},
  title     = {Well-Defined, Molecular Bismuth Compounds: Catalysts in Photochemically Induced Radical Dehydrocoupling Reactions},
  series = {Chemistry - A European Journal},
  volume    = {26},
  journal   = {Chemistry - A European Journal},
  number    = {64},
  doi       = {10.1002/chem.202002219},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-224577},
  pages     = {14551 -- 14555},
  year      = {2020},
  abstract  = {A series of diorgano(bismuth)chalcogenides, [Bi(di-aryl)EPh], has been synthesised and fully characterised (E=S, Se, Te). These molecular bismuth complexes have been exploited in homogeneous photochemically-induced radical catalysis, using the coupling of silanes with TEMPO as a model reaction (TEMPO=(tetramethyl-piperidin-1-yl)-oxyl). Their catalytic properties are complementary or superior to those of known catalysts for these coupling reactions. Catalytically competent intermediates of the reaction have been identified. Applied analytical techniques include NMR, UV/Vis, and EPR spectroscopy, mass spectrometry, single-crystal X-ray diffraction analysis, and (TD)-DFT calculations.},
  language  = {en}
}
@article{HanftRadackiLichtenberg2021,
  author    = {Hanft, Anna and Radacki, Krzysztof and Lichtenberg, Crispin},
  title     = {Cationic Bismuth Aminotroponiminates: Charge Controls Redox Properties},
  series = {Chemistry - A European Journal},
  volume    = {27},
  journal   = {Chemistry - A European Journal},
  number    = {20},
  doi       = {10.1002/chem.202005186},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-225669},
  pages     = {6230 -- 6239},
  year      = {2021},
  abstract  = {The behavior of the redox-active aminotroponiminate (ATI) ligand in the coordination sphere of bismuth has been investigated in neutral and cationic compounds, [Bi(ATI)\(_{3}\)] and [Bi(ATI)\(_{2}\)L\(_{n}\)][A] (L=neutral ligand; n=0, 1; A=counteranion). Their coordination chemistry in solution and in the solid state has been analyzed through (variable-temperature) NMR spectroscopy, line-shape analysis, and single-crystal X-ray diffraction analyses, and their Lewis acidity has been evaluated by using the Gutmann-Beckett method (and modifications thereof). Cyclic voltammetry, in combination with DFT calculations, indicates that switching between ligand- and metal-centered redox events is possible by altering the charge of the compounds from 0 in neutral species to +1 in cationic compounds. This adds important facets to the rich redox chemistry of ATIs and to the redox chemistry of bismuth compounds, which is, so far, largely unexplored.},
  language  = {en}
}