@article{SoltamovKasperPoshakinskiyetal.2019,
  author    = {Soltamov, V. A. and Kasper, C. and Poshakinskiy, A. V. and Anisimov, A. N. and Mokhov, E. N. and Sperlich, A. and Tarasenko, S. A. and Baranov, P. G. and Astakhov, G. V. and Dyakonov, V.},
  title     = {Excitation and coherent control of spin qudit modes in silicon carbide at room temperature},
  series = {Nature Communications},
  volume    = {10},
  journal   = {Nature Communications},
  doi       = {10.1038/s41467-019-09429-x},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-239149},
  year      = {2019},
  abstract  = {One of the challenges in the field of quantum sensing and information processing is to selectively address and coherently manipulate highly homogeneous qubits subject to external perturbations. Here, we present room-temperature coherent control of high-dimensional quantum bits, the so-called qudits, associated with vacancy-related spins in silicon carbide enriched with nuclear spin-free isotopes. In addition to the excitation of a spectrally narrow qudit mode at the pump frequency, several other modes are excited in the electron spin resonance spectra whose relative positions depend on the external magnetic field. We develop a theory of multipole spin dynamics and demonstrate selective quantum control of homogeneous spin packets with sub-MHz spectral resolution. Furthermore, we perform two-frequency Ramsey interferometry to demonstrate absolute dc magnetometry, which is immune to thermal noise and strain inhomogeneity.},
  language  = {en}
}
@article{GottschollDiezSoltamovetal.2021,
  author    = {Gottscholl, Andreas and Diez, Matthias and Soltamov, Victor and Kasper, Christian and Krauße, Dominik and Sperlich, Andreas and Kianinia, Mehran and Bradac, Carlo and Aharonovich, Igor and Dyakonov, Vladimir},
  title     = {Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors},
  series = {Nature Communications},
  volume    = {12},
  journal   = {Nature Communications},
  number    = {1},
  doi       = {10.1038/s41467-021-24725-1},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-261581},
  year      = {2021},
  abstract  = {Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (V\(_B\)\(^-\)) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the V\(_B\)\(^-\). Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.},
  language  = {en}
}
@article{FuchsStenderTrupkeetal.2015,
  author    = {Fuchs, F. and Stender, B. and Trupke, M. and Simin, D. and Pflaum, J. and Dyakonov, V. and Astakhov, G.V.},
  title     = {Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide},
  series = {Nature Communications},
  volume    = {6},
  journal   = {Nature Communications},
  number    = {7578},
  doi       = {10.1038/ncomms8578},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-148502},
  year      = {2015},
  abstract  = {Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.},
  language  = {en}
}