@article{XuShengGreineretal.1994, author = {Xu, Shanjia and Sheng, Xinqing and Greiner, P. and Becker, Charles R. and Geick, R.}, title = {High-order finite-element analysis of scattering properties of II-VI semiconductor materials}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-86283}, year = {1994}, abstract = {The sattering characteristics ot the n-VI semiconductors were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avolds the difficulty of solving the complex transcendental equation introduced in the multimode network method and calculates all the eigenvalues and eigenfunctions simultaneously which are needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and tbe network method. Very good agreement has been achieved, the accuracy and efficiency of the present method are thus verified.}, subject = {Halbleiter}, language = {en} } @phdthesis{Volkmann2004, author = {Volkmann, Thorsten}, title = {Lattice gas models and simulations of epitaxial growth}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-13812}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2004}, abstract = {In this PhD thesis, we develop models for the numerical simulation of epitaxial crystal growth, as realized, e.g., in molecular beam epitaxy (MBE). The basic idea is to use a discrete lattice gas representation of the crystal structure, and to apply kinetic Monte Carlo (KMC) simulations for the description of the growth dynamics. The main advantage of the KMC approach is the possibility to account for atomistic details and at the same time cover MBE relevant time scales in the simulation. In chapter 1, we describe the principles of MBE, pointing out relevant physical processes and the influence of experimental control parameters. We discuss various methods used in the theoretical description of epitaxial growth. Subsequently, the underlying concepts of the KMC method and the lattice gas approach are presented. Important aspects concerning the design of a lattice gas model are considered, e.g. the solid-on-solid approximation or the choice of an appropriate lattice topology. A key element of any KMC simulation is the selection of allowed events and the evaluation of Arrhenius rates for thermally activated processes. We discuss simplifying schemes that are used to approximate the corresponding energy barriers if detailed knowledge about the barriers is not available. Finally, the efficient implementation of the MC kinetics using a rejection-free algorithm is described. In chapter 2, we present a solid-on-solid lattice gas model which aims at the description of II-VI(001) semiconductor surfaces like CdTe(001). The model accounts for the zincblende structure and the relevant surface reconstructions of Cd- and Te-terminated surfaces. Particles at the surface interact via anisotropic nearest and next nearest neighbor interactions, whereas interactions in the bulk are isotropic. The anisotropic surface interactions reflect known properties of CdTe(001) like the small energy difference between the c(2x2) and (2x1) vacancy structures of Cd-terminated surfaces. A key element of the model is the presence of additional Te atoms in a weakly bound Te* state, which is motivated by experimental observations of Te coverages exceeding one monolayer at low temperatures and high Te fluxes. The true mechanism of binding excess Te to the surface is still unclear. Here, we use a mean-field approach assuming a Te* reservoir with limited occupation. In chapter 3, we perform KMC simulations of atomic layer epitaxy (ALE) of CdTe(001). We study the self-regulation of the ALE growth rate and demonstrate how the interplay of the Te* reservoir occupation with the surface kinetics results in two different regimes: at high temperatures the growth rate is limited to one half layer of CdTe per ALE cycle, whereas at low enough temperatures each cycle adds a complete layer. The temperature where the transition between the two regimes occurs depends mainly on the particle fluxes. The temperature dependence of the growth rate and the flux dependence of the transition temperature are in good qualitative agreement with experimental results. Comparing the macroscopic activation energy for Te* desorption in our model with experimental values we find semiquantitative agreement. In chapter 4, we study the formation of nanostructures with alternating stripes during submonolayer heteroepitaxy of two different adsorbate species on a given substrate. We evaluate the influence of two mechanisms: kinetic segregation due to chemically induced diffusion barriers, and strain relaxation by alternating arrangement of the adsorbate species. KMC simulations of a simple cubic lattice gas with weak inter-species binding energy show that kinetic effects are sufficient to account for stripe formation during growth. The dependence of the stripe width on control parameters is investigated. We find an Arrhenius temperature dependence, in agreement with experimental investigations of phase separation in binary or ternary material systems. Canonical MC simulations show that the observed stripes are not stable under equilibrium conditions: the adsorbate species separate into very large domains. Off-lattice simulations which account for the lattice misfit of the involved particle species show that, under equilibrium conditions, the competition between binding and strain energy results in regular stripe patterns with a well-defined width depending on both misfit and binding energies. In KMC simulations, the stripe-formation and the experimentally reported ramification of adsorbate islands are reproduced. To clarify the origin of the island ramification, we investigate an enhanced lattice gas model whose parameters are fitted to match characteristic off-lattice diffusion barriers. The simulation results show that a satisfactory explanation of experimental observations within the lattice gas framework requires a detailed incorporation of long-range elastic interactions. In the appendix we discuss supplementary topics related to the lattice gas simulations in chapter 4.}, subject = {Kristallwachstum}, language = {en} } @phdthesis{Slobodskyy2006, author = {Slobodskyy, Taras}, title = {Semimagnetic heterostructures for spintronics}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-21011}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2006}, abstract = {F{\"u}r zuk{\"u}nftige Technologien ist die Erforschung von der verwendeten Teilchen n{\"o}tig. Spintronik ist ein modernes Gebiet der Physik, welches neben der Ladung auch die Spineigenschaften als zus¨atzlichen Freiheitsgrad nutzbar macht. Der "conductivity mismatch" stellt ein fundamentales Problem f{\"u}r elektrische Spininjektion aus einem ferromagnetischem Metal in einen diffusiven Halbleiter dar. Daher m{\"u}ssen andere Methoden f{\"u}r die Injektion spin-polarisierter Ladungstr{\"a}ger benutzt werden. Mit einem Tunnelkontakt ist es m{\"o}glich, eine hoch spin-polarisierte, Raumtemperatur Tunnel-Injektion zu erzielen. Wir benutzten einen neuen Ansatz und verwendeten magnetische RTDs zur Spinmanipulation. In dieser Arbeit wurden die Eigenschaften von magnetischen, resonanten Tunneldioden (RTDs) aus rheinen II-VI-Halbleitern in ihrer Verwendung f{\"u}r die Spintronik beschrieben. Wachstumsbedingungen wurden optimiert, um das Peak-to-Valley-Verh{\"a}ltnis zu vergr{\"o}ßern. Das Design der RTDs wurde optimiert, um spinbezogene Transporteffekte beobachten zu k{\"o}nen. Mit einem externen Magnetfeld war Spinmanipulation m{\"o}glich. Selbstorganisierte CdSe Quanten-Strukturen wurden hergestelt und mit optischen Techniken untersucht. Sie w{\"u}rden in (Zn,Be)Se Tunnelbarrieren eingebettet, so dass ihre Eigenschaften durch resonantes Tunneln zug{\"a}nglich wurden.}, subject = {Heterostruktur-Bauelement}, language = {en} } @phdthesis{Pappert2007, author = {Pappert, Katrin}, title = {Anisotropies in (Ga,Mn)As - Measurement, Control and Application in Novel Devices}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-23370}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2007}, abstract = {Ferromagnetic semiconductors (FS) promise the integration of magnetic memory functionalities and semiconductor information processing into the same material system. The prototypical FS (Ga,Mn)As has become the focus of semiconductor spintronics research over the past years. The spin-orbit mediated coupling of magnetic and semiconductor properties in this material gives rise to many novel transport-related phenomena which can be harnessed for device applications. In this thesis we address challenges faced in the development of an all-semiconductor memory architecture. A starting point for information storage in FS is the knowledge of their detailed magnetic anisotropy. The first part of this thesis concentrates on the investigation of the magnetization behaviour in compressively strained (Ga,Mn)As by electrical means. The angle between current and magnetization is monitored in magnetoresistance(MR) measurements along many in-plane directions using the Anisotropic MR(AMR) or Planar Hall effect(PHE). It is shown, that a full angular set of such measurements displayed in a color coded resistance polar plot can be used to identify and quantitatively determine the symmetry components of the magnetic anisotropy of (Ga,Mn)As at 4 K. We compile such "anisotropy fingerprints" for many (Ga,Mn)As layers from Wuerzburg and other laboratories and find the presence of three symmetry terms in all layers. The biaxial anisotropy term with easy axes along the [100] and [010] crystal direction dominates the magnetic behaviour. An additional uniaxial term with an anisotropy constant of ~10\% of the biaxial one has its easy axis along either of the two <110> directions. A second contribution of uniaxial symmetry with easy axis along one of the biaxial easy axes has a strength of only ~1\% of the biaxial anisotropy and is therefore barely visible in standard SQUID measurements. An all-electrical writing scheme would be desirable for commercialization. We report on a current assisted magnetization manipulation experiment in a lateral (Ga,Mn)As nanodevice at 4 K (far below Tc). Reading out the large resistance signal from DW that are confined in nanoconstrictions, we demonstrate the current assisted magnetization switching of a small central island through a hole mediated spin transfer from the adjacent leads. One possible non-perturbative read-out scheme for FS memory devices could be the recently discovered Tunneling Anisotropic MagnetoResistance (TAMR) effect. Here we clarify the origin of the large amplification of the TAMR amplitude in a device with an epitaxial GaAs tunnel barrier at low temperatures. We prove with the help of density of states spectroscopy that a thin (Ga,Mn)As injector layer undergoes a metal insulator transition upon a change of the magnetization direction in the layer plane. The two states can be distinguished by their typical power law behaviour in the measured conductance vs voltage tunneling spectra. While all hereto demonstrated (Ga,Mn)As devices inherited their anisotropic magnetic properties from their parent FS layer, more sophisticated FS architectures will require locally defined FS elements of different magnetic anisotropy on the same wafer. We show that shape anisotropy is not applicable in FS because of their low volume magnetization. We present a method to lithographically engineer the magnetic anisotropy of (Ga,Mn)As by submicron patterning. Anisotropic strain relaxation in submicron bar structures (nanobars) and the related deformation of the crystal lattice introduce a new uniaxial anisotropy term in the energy equation. We demonstrate by both SQUID and transport investigations that this lithographically induced uniaxial anisotropy overwrites the intrinsic biaxial anisotropy at all temperatures up to Tc. The final section of the thesis combines all the above into a novel device scheme. We use anisotropy engineering to fabricate two orthogonal, magnetically uniaxial, nanobars which are electrically connected through a constriction. We find that the constriction resistance depends on the relative orientation of the nanobar magnetizations, which can be written by an in-plane magnetic field. This effect can be explained with the AMR effect in connection with the field line patterns in the respective states. The device offers a novel non-volatile information storage scheme and a corresponding non-perturbative read-out method. The read out signal is shown to increase drastically in samples with partly depleted constriction region. This could be shown to originate in a magnetization direction driven metal insulator transition of the material in the constriction region.}, subject = {Anisotropie}, language = {en} } @phdthesis{Rueth2011, author = {R{\"u}th, Michael}, title = {A Comprehensive Study of Dilute Magnetic Semiconductor Resonant Tunneling Diodes}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-71472}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2011}, abstract = {We investigate transport measurements on all II-VI semiconductor resonant tunneling diodes (RTDs). Being very versatile, the dilute magnetic semiconductor (DMS) system (Zn,Be,Mn,Cd)Se is a perfect testbed for various spintronic device designs, as it allows for separate control of electrical and magnetic properties. In contrast to the ferromagnetic semiconductor (Ga,Mn)As, doping ZnSe with Mn impurities does not alter the electrical properties of the semiconductor, as the magnetic dopant is isoelectric in the ZnSe host.}, subject = {Semimagnetischer Halbleiter}, language = {en} } @phdthesis{Frey2011, author = {Frey, Alexander}, title = {Spin-Dependent Tunneling and Heterovalent Heterointerface Effects in Diluted Magnetic II-VI Semiconductor Heterostructures}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-78133}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2011}, abstract = {The contribution of the present thesis consists of three parts. They are centered around investigating certain semiconductor heterointerfaces relevant to spin injection, exploring novel, diluted magnetic single barrier tunneling structures, and further developing diluted magnetic II-VI resonant tunneling diodes.}, subject = {Zwei-Sechs-Halbleiter}, language = {en} } @phdthesis{Ruff2013, author = {Ruff, Andreas}, title = {On the importance of electronic correlations in potassium-doped organic semiconductors}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-83635}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2013}, abstract = {The present thesis is concerned with the impact of alkali metal-doping on the electronic structure of semiconducting organic thin films. The organic molecular systems which have been studied are the polycyclic aromatic hydrocarbons picene, pentacene, and coronene. Motivated by reports about exceptional behavior like superconductivity and electronic correlations of their alkali metal-doped compounds, high quality films fabricated from the above named molecules have been studied. The electronic structure of the pristine materials and their doped compounds has been investigated using photoelectron spectroscopy. Core level and valence band studies of undoped films yield excellent photoemission spectra agreeing with or even outperforming previously reported data from the literature. Alkali metal-doping manifests itself in a uniform manner in the electronic structure for all probed samples: Opposed to reports from the literature about metallicity and even superconductivity in alkali metal-doped picene, pentacene, and coronene, all films exhibit insulating nature with an energy gap of the order of one electron-volt. Remarkably, this is independent of the doping concentration and the type of dopant, i.e., potassium, cesium, or sodium. Based on the interplay between narrow bandwidths in organic semiconductors and sufficiently high on-molecule Coulomb repulsion, the non-metallicity is attributed to the strong influence of electronic correlations leading to the formation of a Mott insulator. In the case of picene, this is consolidated by calculations using a combination of density functional theory and dynamical mean-field theory. Beyond the extensive considerations regarding electronic correlations, further intriguing aspects have been observed. The deposition of thin picene films leads to the formation of a non-equilibrium situation between substrate and film surface. Here, the establishment of a homogeneous chemical potential is hampered due to the only weak van der Waals-interactions between the molecular layers in the films. Consequently, spectral weight is measurable above the reference chemical potential in photoemission. Furthermore, it has been found that the acceptance of additional electrons in pentacene is limited. While picene and coronene are able to host up to three extra electrons, in pentacene the limit is already reached for one electron. Finally, further extrinsic effects, coming along with alkali metal-doping, have been scrutinized. The oxidation of potassium atoms induced by the reaction with molecular oxygen in the residual gas of the ultra-high vacuum system turned out to significantly influence the electronic structure of alkali metal-doped picene and coronene. Moreover, also the applied X-ray and UV irradiation caused a certain impact on the photoemission spectra. Surprisingly, both effects did not play a role in the studies of potassium-doped pentacene.}, subject = {Organischer Halbleiter}, language = {en} } @phdthesis{Pohl2013, author = {Pohl, Christoph}, title = {Silicon Based MBE of Manganese-Silicide and Silicon-Suboxide}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-83757}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2013}, abstract = {The present thesis deals with the fabrication, optimization of growth process and characterization of silicon based materials with molecular beam epitaxy. Two material systems are investigated in the course of this work: silicon/silicon suboxide multilayer structures and mono manganese silicide thin films. Mono manganese silicide (MnSi) is grown on Si(111) substrates with an hydrogen passivated surface, that is prepared by wet chemical processes. The growth start is performed by deposition of an amorphous Mn wetting layer that is subsequently annealed to form a MnSi seed layer on which the MnSi molecular beam epitaxy (MBE) is achieved. An amorphous or a crystalline Si cap layer is deposited onto the MnSi film to finalize the growth process and protect the sample from oxidation. With Raman spectroscopy it is shown that the crystalline cap layer is in fact single crystalline silicon. Results of x-ray diffraction and Raman spectroscopy confirm the growth of mono manganese silicide in contrast to other existing manganese silicide phases. In addition, in-plane and out-of-plane residual strain, and twinning of the MnSi thin film is detected with x-ray diffraction of symmetric and asymmetric reflections. Orientation between the Si substrate and the MnSi film is determined with the parallel lattice planes MnSi(210) and Si(511). Transport measurements show a T^2 dependence of the resistivity below 30K and metallic behavior above, a magneto resistance of 0.9\% and an unusual memory like effect of the resistance for an in-plane magnetic field sweep measurement. Silicon/Silicon suboxide (SiOx) multilayer structures are grown on Si(100) by interrupting the Si growth and oxidizing the surface with molecular oxygen. During oxidation the RHEED pattern changes from the Si(2x1) reconstruction to an amorphous pattern. When silicon growth is resumed a spotty RHEED pattern emerges, indicating a rough, three dimensional surface. The rough surface can be smoothed out with Si growth at substrate temperatures between 600°C and 700°C. Measurements with transmission electron microscopy show that a silicon suboxide layer of about 1nm embedded in single crystalline silicon is formed with the procedure. Multilayer structures are achieved by repeating the oxidation procedure when the Si spacer layer has a smooth and flat surface. The oxygen content of the suboxide layers can be varied between 7.6\% and 26.8\%, as determined with secondary ion mass spectrometry and custom-built simulations models for the x-ray diffraction. Structural stability of the multilayer structures is investigated by x-ray diffraction before and after rapid thermal annealing. For temperatures up to 1000°C the multilayer structures show no modification of the SiOx layer in x-ray diffraction.}, subject = {Molekularstrahlepitaxie}, language = {en} } @phdthesis{Constantino2013, author = {Constantino, Jennifer Anne}, title = {Characterization of Novel Magnetic Materials: Ultra-Thin (Ga,Mn)As and Epitaxial-Growth MnSi Thin Films}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-90578}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2013}, abstract = {The study of magnetic phases in spintronic materials is crucial to both our fundamental understanding of magnetic interactions and for finding new effects for future applications. In this thesis, we study the basic electrical and magnetic transport properties of both epitaxially-grown MnSi thin films, a helimagnetic metal only starting to be developed within our group, and parabolic-doped ultra-thin (Ga,Mn)As layers for future studies and applications.}, subject = {Galliumarsenid}, language = {en} } @phdthesis{Pfeuffer2016, author = {Pfeuffer, Rebekka Christina}, title = {Growth and characterization of II-VI semiconductor nanowires grown by Au catalyst assisted molecular beam epitaxy}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-141385}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2016}, abstract = {In the present PhD thesis the control of the morphology, such as the diameter, the length, the orientation, the density, and the crystalline quality of 1D ZnSe NWs grown by MBE for optical and transport applications has been achieved.}, subject = {Zinkselenid}, language = {en} } @phdthesis{Namal2018, author = {Namal, Imge}, title = {Fabrication and Optical and Electronic Characterization of Conjugated Polymer-Stabilized Semiconducting Single-Wall Carbon Nanotubes in Dispersions and Thin Films}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-162393}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2018}, abstract = {In order to shrink the size of semiconductor devices and improve their efficiency at the same time, silicon-based semiconductor devices have been engineered, until the material almost reaches its performance limits. As the candidate to be used next in semiconducting devices, single-wall carbon nanotubes show a great potential due to their promise of increased device efficiency and their high charge carrier mobilities in the nanometer size active areas. However, there are material based problems to overcome in order to imply SWNTs in the semiconductor devices. SWNTs tend to aggregate in bundles and it is not trivial to obtain an electronically or chirally homogeneous SWNT dispersion and when it is done, a homogeneous thin film needs to be produced with a technique that is practical, easy and scalable. This work was aimed to solve both of these problems. In the first part of this study, six different polymers, containing fluorene or carbazole as the rigid part and bipyridine, bithiophene or biphenyl as the accompanying copolymer unit, were used to selectively disperse semiconducting SWNTs. With the data obtained from absorption and photoluminescence spectroscopy of the corresponding dispersions, it was found out that the rigid part of the copolymer plays a primary role in determining its dispersion efficiency and electronic sorting ability. Within the two tested units, carbazole has a higher π electron density. Due to increased π-π interactions, carbazole containing copolymers have higher dispersion efficiency. However, the electronic sorting ability of fluorene containing polymers is superior. Chiral selection of the polymers in the dispersion is not directly foreseeable from the selection of backbone units. At the end, obtaining a monochiral dispersion is found to be highly dependent on the used raw material in combination to the preferred polymer. Next, one of the best performing polymers due to high chirality enrichment and electronic sorting ability was chosen in order to disperse SWNTs. Thin films of varying thickness between 18 ± 5 to 755o±o5 nm were prepared using vacuum filtration wet transfer method in order to analyze them optically and electronically. The scalability and efficiency of the integrated thin film production method were shown using optical, topographical and electronic measurements. The relative photoluminescence quantum yield of the radiative decay from the SWNT thin films was found to be constant for the thickness scale. Constant roughness on the film surface and linearly increasing concentration of SWNTs were also supporting the scalability of this thin film production method. Electronic measurements on bottom gate top contact transistors have shown an increasing charge carrier mobility for linear and saturation regimes. This was caused by the missing normalization of the mobility for the thickness of the active layer. This emphasizes the importance of considering this dimension for comparison of different field effect transistor mobilities.}, subject = {Feldeffekttransistor}, language = {en} } @phdthesis{Lundt2019, author = {Lundt, Nils}, title = {Strong light-matter coupling with 2D materials}, doi = {10.25972/OPUS-18733}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-187335}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2019}, abstract = {This publication is dedicated to investigate strong light-matter coupling with excitons in 2D materials. This work starts with an introduction to the fundamentals of excitons in 2D materials, microcavities and strong coupling in chapter 2. The experimental methods used in this work are explained in detail in chapter 3. Chapter 4 covers basic investigations that help to select appropriate materials and cavities for the following experiments. In chapter 5, results on the formation of exciton-polaritons in various materials and cavity designs are presented. Chapter 6 covers studies on the spin-valley properties of exciton-polaritons including effects such as valley polarization, valley coherence and valley-dependent polariton propagation. Finally, the formation of hybrid-polaritons and their condensation are presented in chapter 7.}, subject = {Exziton-Polariton}, language = {en} } @phdthesis{HechtgebWagener2019, author = {Hecht [geb. Wagener], Reinhard Johannes}, title = {Processing and Characterization of Bulk Heterojunction Solar Cells Based on New Organic n-Type Semiconductors}, doi = {10.25972/OPUS-16138}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-161385}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2019}, abstract = {This thesis established the fabrication of organic solar cells of DA dye donors and fullerene acceptors under ambient conditions in our laboratory, however, with reduced power conversion efficiencies compared to inert conditions. It was shown that moisture had the strongest impact on the stability and reproducibility of the solar cells. Therefore, utilization of robust materials, inverted device architectures and fast fabrication/characterization are recommended if processing takes place in air. Furthermore, the dyad concept was successfully explored in merocyanine dye-fullerene dyads and power conversion efficiencies of up to 1.14 \% and 1.59 \% were measured under ambient and inert conditions, respectively. It was determined that the major drawback in comparison to comparable BHJ devices was the inability of the dyad molecules to undergo phase separation. Finally, two series of small molecules were designed in order to obtain electron transport materials, using the acceptor-core-acceptor motive. By variation of the acceptor units especially the LUMO levels could be lowered effectively. Investigation of the compounds in organic thin film transistors helped to identify promising molecules with electron transport properties. Electron transport mobilities of up to 7.3 × 10-2 cm2 V-1 s-1 (ADA2b) and 1.39 × 10-2 cm2 V-1 s-1 (AπA1b) were measured in air for the ADA and AπA dyes, respectively. Investigation of selected molecules in organic solar cells proved that these molecules work as active layer components, even though power conversion efficiencies cannot compete with fullerene based devices yet. Thus, this thesis shows new possibilities that might help to develop and design small molecules as substitutes for fullerene acceptors.}, subject = {Heterosolarzelle}, language = {en} } @phdthesis{Schlereth2020, author = {Schlereth, Raimund}, title = {New techniques and improvements in the MBE growth of Hg-containing narrow gap semiconductors}, doi = {10.25972/OPUS-20079}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-200790}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2020}, abstract = {The subject of this thesis is the growth of Hg\(_{1-x}\)Cd\(_2\)Te layers via molecular beam epitaxy (MBE). This material system gives rise to a number of extraordinary physical phenomena related to its electronic band structure and therefore is of fundamental interest in research. The main results can be divided into three main areas, the implementation of a temperature measurement system based on band edge thermometry (BET), improvements of CdTe virtual substrate growth and the investigation of Hg\(_{1-x}\)Cd\(_2\)Te for different compositions.}, subject = {Halbleiter}, language = {en} }