@article{HeStolteBurschkaetal.2015,
  author    = {He, Tao and Stolte, Matthias and Burschka, Christian and Hansen, Nis Hauke and Musiol, Thomas and K{\"a}lblein, Daniel and Pflaum, Jens and Tao, Xutang and Brill, Jochen and W{\"u}rthner, Frank},
  title     = {Single-crystal field-effect transistors of new Cl\(_{2}\)-NDI polymorph processed by sublimation in air},
  series = {Nature Communications},
  volume    = {6},
  journal   = {Nature Communications},
  number    = {5954},
  doi       = {10.1038/ncomms6954},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-149255},
  year      = {2015},
  abstract  = {Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-film transistors by sublimation of 2,6-dichloro-naphthalene diimide in air. Under these conditions, a new polymorph with two-dimensional brick-wall packing mode (\(\beta\)-phase) is obtained that is distinguished from the previously reported herringbone packing motif obtained from solution (\(\alpha\)-phase). We are able to fabricate single-crystal field-effect transistors with electron mobilities in air of up to 8.6 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\) (\(\alpha\)-phase) and up to 3.5 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\) (\(\beta\)-phase) on n-octadecyltriethoxysilane-modified substrates. On silicon dioxide, thin-film devices based on \(\beta\)-phase can be manufactured in air giving rise to electron mobilities of 0.37 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\). The simple crystal and thin-film growth procedures by sublimation under ambient conditions avoid elaborate substrate modifications and costly vacuum equipment-based fabrication steps.},
  language  = {en}
}
@article{MuetzelFarrellShoyamaetal.2022,
  author    = {M{\"u}tzel, Carina and Farrell, Jeffrey M. and Shoyama, Kazutaka and W{\"u}rthner, Frank},
  title     = {12b,24b-Diborahexabenzo[a,c,fg,l,n,qr]pentacene: A Low-LUMO Boron-Doped Polycyclic Aromatic Hydrocarbon},
  series = {Angewandte Chemie International Edition},
  volume    = {61},
  journal   = {Angewandte Chemie International Edition},
  number    = {8},
  doi       = {10.1002/anie.202115746},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-318808},
  year      = {2022},
  abstract  = {Herein we devise and execute a new synthesis of a pristine boron-doped nanographene. Our target boron-doped nanographene was designed based on DFT calculations to possess a low LUMO energy level and a narrow band gap derived from its precise geometry and B-doping arrangement. Our synthesis of this target, a doubly B-doped hexabenzopentacene (B\(_{2}\)-HBP), employs six net C-H borylations of an alkene, comprising consecutive hydroboration/electrophilic borylation/dehydrogenation and BBr\(_{3}\)/AlCl\(_{3}\)/2,6-dichloropyridine-mediated C-H borylation steps. As predicted by our calculations, B\(_{2}\)-HBP absorbs strongly in the visible region and emits in the NIR up to 1150 nm in o-dichlorobenzene solutions. Furthermore, B\(_{2}\)-HBP possesses a very low LUMO level, showing two reversible reductions at -1.00 V and -1.17 V vs. Fc\(^{+}\)/Fc. Our methodology is surprisingly selective despite its implementation of unfunctionalized precursors and offers a new approach to the synthesis of pristine B-doped polycyclic aromatic hydrocarbons.},
  language  = {en}
}