@phdthesis{Maier2010,
  author    = {Maier, Florian C.},
  title     = {Spectromicroscopic characterisation of the formation of complex interfaces},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-65062},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2010},
  abstract  = {Within the framework of this thesis the mechanisms of growth and reorganisation of surfaces within the first few layers were investigated that are the basis for the fabrication of high quality thin films and interfaces. Two model systems, PTCDA/Ag(111) and CdSe/ZnSe quantum dots (QD), were chosen to study such processes in detail and to demonstrate the power and improvements of the aberration corrected spectromicroscope SMART [1] simultaneously. The measurements benefit especially from the enhanced transmission of the microscope and also from its improved resolution. SMART, the first double-aberration corrected instrument of its kind [2], provided comprehensive methods (LEEM/PEEM, μ-LEED, μ-XPS) to study in-situ and in real time the surface reorganisation and to determine morphology, local structure and local chemical composition of the resulting thin film. Complementarily, a commercial AFM [3] was used ex-situ. XPEEM and μ-XPS measurements were made possible by attaching SMART to the high flux density beamline of the soft-X-ray source BESSY-II [4]. PTCDA/Ag(111) - Growth and structure of the first two layers Although PTCDA/Ag(111) is one of the most intensely studied model systems for the growth of organic semiconductor thin films, it still offers new insights into a complex growth behaviour. This study enlightens the temperature dependant influence of morphological features as small as monatomic Ag steps on the growth process of the first two layers. At low temperatures, single Ag steps act as diffusion barriers. But interdiffusion was observed already for the 2nd layer whereas domain boundaries in the 1st PTCDA-layer persist for crystallite growth in the 2nd layer. 1st layer islands are more compact and the more dendritic development of the 2nd layer indicates reduced interaction strength between 2nd and 1st layer. These findings were explained by a model consisting of structural and potential barriers. The second part of the PTCDA study reveals a variety of phases that appears only if at least two layers are deposited. Besides the six known rotational domains of the interface system PTCDA/Ag(111) [5], a further manifold of structures was discovered. It does not only show a surprising striped image contrast, but the 2nd layer also grows in an elongated way along these so-called 'ripples'. The latter show a rather large period and were found in a wide temperature range. Additionally the μ-LEED pattern of such a domain shows a new super-superstructure as well. This phase is explained by a structural model that introduces a rotated, more relaxed domain in the 2nd layer that does not exist in the first layer. Its structural parameters are similar to those of the bulk unitcells of PTCDA. The model is confirmed by the observation of two different rotational domains that grow on top of one single 'substrate' domain in the 1st layer. The orientations of the ripple phases fit as well to the predictions of the model. The growth direction along the ripples corresponds to the short diagonal of the super-superstructure unitcell with diamond-like shape. CdSe/ZnSe - Inverse structuring by sublimation of an α-Te cap With the second model system the formation of CdSe quantum dots (QD) from strained epi-layers was investigated. In this case the structures do not form during deposition, but rather during sublimation of the so-called 'ignition cap'. For these pilot experiments not only the process of QD formation itself was of interest, but also the portability of the preparation and the prevention of contaminations. It was found that the α-Se is well suited for capping and the last step of the QD preparation, the sublimation of the α-Te cap, needs a sufficiently high rate in rise of temperature. Subsequently the cap, the process of desorption and the final surface with the quantum structures were investigated in detail. The cap was deposited by the MBE-group in W{\"u}rzburg as an amorphous Te layer but was found to contain a variety of structures. Holes, cracks, and micro-crystallites within an α-Te matrix were identified. Sublimation of the "ignition cap" was observed in real-time. Thus the discovered cap-structures could be correlated with the newly formed features as, e.g., QDs on the bare CdSe surface. Since CdSe/ZnSe QDs prefer to form in the neighbourhood of the Te μ-crystallites, Te was found to play a major role in their formation process. Different explanations as the impact of Te as a surfactant, an enhanced mobility of adatoms or as stressor nuclei are discussed. The spectromicroscopic characterisation of the CdSe surface with QDs revealed the crystallographic directions. An increased Cd signal of the film was found at positions of former holes. Several possibilities as segregation or surface termination are reviewed, that might explain this slight Cd variation. Therewith, an important step to a detailed understanding of the complex reorganisation process in coating systems could be achieved.},
  subject      = {Halbleiterschicht},
  language  = {en}
}