@article{BunzmannKrugmannWeissenseeletal.2021, author = {Bunzmann, Nikolai and Krugmann, Benjamin and Weissenseel, Sebastian and Kudriashova, Liudmila and Ivaniuk, Khrystyna and Stakhira, Pavlo and Cherpak, Vladyslav and Chapran, Marian and Grybauskaite-Kaminskiene, Gintare and Grazulevicius, Juozas Vidas and Dyakonov, Vladimir and Sperlich, Andreas}, title = {Spin- and Voltage-Dependent Emission from Intra- and Intermolecular TADF OLEDs}, series = {Advanced Electronic Materials}, volume = {7}, journal = {Advanced Electronic Materials}, number = {3}, doi = {10.1002/aelm.202000702}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-224434}, year = {2021}, abstract = {Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) utilize molecular systems with a small energy splitting between singlet and triplet states. This can either be realized in intramolecular charge transfer states of molecules with near-orthogonal donor and acceptor moieties or in intermolecular exciplex states formed between a suitable combination of individual donor and acceptor materials. Here, 4,4′-(9H,9′H-[3,3′-bicarbazole]-9,9′-diyl)bis(3-(trifluoromethyl) benzonitrile) (pCNBCzoCF\(_{3}\)) is investigated, which shows intramolecular TADF but can also form exciplex states in combination with 4,4′,4′′-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA). Orange emitting exciplex-based OLEDs additionally generate a sky-blue emission from the intramolecular emitter with an intensity that can be voltage-controlled. Electroluminescence detected magnetic resonance (ELDMR) is applied to study the thermally activated spin-dependent triplet to singlet up-conversion in operating devices. Thereby, intermediate excited states involved in OLED operation can be investigated and the corresponding activation energy for both, intra- and intermolecular based TADF can be derived. Furthermore, a lower estimate is given for the extent of the triplet wavefunction to be ≥ 1.2 nm. Photoluminescence detected magnetic resonance (PLDMR) reveals the population of molecular triplets in optically excited thin films. Overall, the findings allow to draw a comprehensive picture of the spin-dependent emission from intra- and intermolecular TADF OLEDs.}, language = {en} } @phdthesis{Auth2020, author = {Auth, Michael Tilman}, title = {Quantitative Electron Paramagnetic Resonance Studies of Charge Transfer in Organic Semiconductors}, doi = {10.25972/OPUS-18951}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-189513}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2020}, abstract = {In the present work we investigated various charge transfer processes, as they appear in the versatile world of organic semiconductors by probing the spin states of the corresponding charge carrier species via electron paramagnetic resonance (EPR) spectroscopy. All studied material systems are carbon-based compounds, either belonging to the group of polymers, fullerenes, or single-wall carbon nanotubes (SWNTs). In the first instance, we addressed the change of the open circuit voltage (Voc) with the fullerene blend stoichiometry in fullerene-based solar cells for organic photovoltaics (OPV). The voltage depends strongly on the energy separation between the lowest unoccupied molecular orbital (LUMO) of the donor and the highest occupied molecular orbital (HOMO) of the acceptor. By exploiting the Gaussian distribution of the charge carriers in a two-level system, and thus also their spins in the EPR experiment, it could be shown that the LUMOs get closer by a few to a few hundred meV when going from pure fullerene materials to a fullerene mixture. The reason for this strong energetic effect is likely the formation of a fullerene alloy. Further, we investigated the chemical doping mechanism of SWNTs with a (6,5)-chirality and their behaviour under optical excitation. In order to determine the unintentional (pre)-doping of SWNTs, EPR spectra of the raw material as well as after different purification steps were recorded. This facilitated the determination of nanotube defects and atmospheric p-doping as the causes of the measured EPR signals. In order to deliberately transfer additional charge carriers to the nanotubes, we added the redox-active substance AuCl3 where we determined an associated doping-yield of (1.5±0.2)\%. In addition, a statistical occupation model was developed which can be used to simulate the distribution of EPR active, i.e. unpaired and localised charge carriers on the nanotubes. Finally, we investigated the charge transfer behaviour of (6,5)-SWNTs together with the polymer P3HT and the fullerene PC60BM after optical excitation.}, subject = {Organische Halbleiter}, language = {en} } @article{OPUS4-14963, title = {Determination of spin and parity of the Higgs boson in the WW\(^{*}\)→eνμν decay channel with the ATLAS detector}, series = {European Physical Journal C: Particles and Fields}, volume = {75}, journal = {European Physical Journal C: Particles and Fields}, number = {5}, organization = {ATLAS Collaboration}, doi = {10.1140/epjc/s10052-015-3436-3}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-149632}, pages = {231}, year = {2015}, abstract = {Studies of the spin and parity quantum numbers of the Higgs boson in the WW\(^{*}\)→eνμν final state are presented, based on proton-proton collision data collected by the ATLAS detector at the Large Hadron Collider, corresponding to an integrated luminosity of 20.3 fb\(^{-1}\) at a centre-of-mass energy of \(\sqrt {s}\)=8 TeV. The Standard Model spin-parity J\(^{CP}\)=0\(^{++}\) hypothesis is compared with alternative hypotheses for both spin and CP. The case where the observed resonance is a mixture of the Standard-Model-like Higgs boson and CP-even (J\(^{CP}\)=0\(^{++}\)) or CP-odd (J\(^{CP}\)=0\(^{+-}\)) Higgs boson in scenarios beyond the Standard Model is also studied. The data are found to be consistent with the Standard Model prediction and limits are placed on alternative spin and CP hypotheses, including CP mixing in different scenarios.}, language = {en} } @phdthesis{Maass2017, author = {Maaß, Henriette}, title = {Spin-dependence of angle-resolved photoemission from spin-orbit split surface states}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-151025}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2017}, abstract = {Spin- and angle-resolved photoelectron spectroscopy is the prime method to investigate spin polarized electronic states at solid state surfaces. In how far the spin polarization of an emitted photoelectron reflects the intrinsic spin character of an electronic state is the main question in the work at hand. It turns out that the measured spin polarization is strongly influenced by experimental conditions, namely by the polarization of the incoming radiation and the excitation energy. The photoemission process thus plays a non-negligible role in a spin-sensitive measurement. This work is dedicated to unravel the relation between the result of a spin-resolved measurement and the spin character in the ground state and, therefore, to gain a deep understanding of the spin-dependent photoemission process. Materials that exhibit significant spin-splittings in their electronic structure, owing to a strong spin-orbit coupling, serve as model systems for the investigations in this work. Therefore, systems with large Rashba-type spin-splittings as BiTeI(0001) and the surface alloys BiAg2/Ag(111) and PbAg2/Ag(111) are investigated. Likewise, the surface electronic structure of the topological insulators Bi2Te2Se(0001) and Bi2Te3(0001) are analyzed. Light polarization dependent photoemission experiments serve as a probe of the orbital composition of electronic states. The knowledge of the orbital structure helps to disentangle the spin-orbital texture inherent to the different surface states, when in addition the spin-polarization is probed. It turns out that the topological surface state of Bi2Te2Se(0001) as well as the Rashba-type surface state of BiTeI(0001) exhibit chiral spin-textures associated with the p-like in-plane orbitals. In particular, opposite chiralities are coupled to either tangentially or radially aligned p-like orbitals, respectively. The results presented here are thus evidence that a coupling between spin- and orbital part of the wave function occurs under the influence of spin-orbit coupling, independent of the materials topology. Systematic photon energy dependent measurements of the out-of-plane spin polarization of the topological surface state of Bi2Te3(0001) reveal a strong dependence and even a reversal of the sign of the photoelectron spin polarization with photon energy. Similarly, the measured spin component perpendicular to the wave vector of the surface state of BiAg2/Ag(111) shows strong modulations and sign reversals when the photon energy is changed. In BiAg2/Ag(111) the variations in the photoelectron spin polarization are accompanied by significant changes and even a complete suppression of the photoemission intensity from the surface state, indicating that the variations of the spin polarization are strongly related to the photoemission cross section. This relation is finally analyzed in detail by employing a simple model, which is based on an evaluation of the transition matrix elements that describe the presented experiments. The model shows that the underlying cause for the observed photoelectron spin reversals can be found in the coupling of the spin structure to the spatial part of the initial state wave function, revealing the crucial role of spin-orbit interaction in the initial state wave function. The model is supported by ab initio photoemission calculations, which show strong agreement with the experimental results.}, subject = {Photoelektronenspektroskopie}, language = {en} } @phdthesis{Fuchs2015, author = {Fuchs, Franziska}, title = {Optical spectroscopy on silicon vacancy defects in silicon carbide}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-124071}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2015}, abstract = {This work sheds light on different aspects of the silicon vacancy in SiC: (1) Defect creation via irradiation is shown both with electrons and neutrons. Optical properties have been determined: the excitation of the vacancy is most efficient at excitation wavelengths between 720nm and 800nm. The PL decay yields a characteristic excited state lifetime of (6.3±0.6)ns. (2) Defect engineering, meaning the controlled creation of vacancies in SiC with varying neutron fluence. The defect density could be engineered over eight orders of magnitude. On the one hand, in the sample with highest emitter density, the huge PL signal could even be enhanced by factor of five via annealing mechanisms. On the other hand, in the low defect density samples, single defects with photostable room temperature NIR emission were doubtlessly proven. Their lifetime of around 7ns confirmed the value of the transient measurement. (3) Also electrical excitation of the defects has been demonstrated in a SiC LED structure. (4) The investigations revealed for the first time that silicon vacancies can even exist SiC nanocrystals down to sizes of about 60 nm. The defects in the nanocrystals show stable PL emission in the NIR and even magnetic resonance in the 600nm fraction. In conclusion, this work ascertains on the one hand basic properties of the silicon vacancy in silicon carbide. On the other hand, proof-of-principle measurements test the potential for various defect-based applications of the vacancy in SiC, and confirm the feasibility of e.g. electrically driven single photon sources or nanosensing applications in the near future.}, subject = {Siliciumcarbid}, language = {en} }