@phdthesis{Stepanenko2008, author = {Stepanenko, Vladimir}, title = {Self-Assembly of Bay-Substituted Perylene Bisimide by Ligand-Metal Ion Coordination}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-32063}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2008}, abstract = {The subject of this thesis is the synthesis and characterization of PBI-based fluorescent metallosupramolecular polymers and cyclic arrays. Terpyridine receptor functionalized PBIs of predesigned geometry have been used as building blocks to construct desired macromolecular structures through metal-ion-directed self-assembly. These metallosupramolecular architectures have been investigated by NMR, UV/Vis and fluorescence spectroscopy, mass spectrometry, and atomic force microscopy.}, subject = {Supramolekulare Chemie}, language = {en} } @phdthesis{Schmidt2008, author = {Schmidt, R{\"u}diger}, title = {Perylene Bisimide and Acene Derivatives as Organic Semiconductors in OTFTs}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-29314}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2008}, abstract = {This thesis deals with the synthesis of improved organic semiconductors, the detailed investigation of the molecular properties and the solid state arrangements revealed by single crystal X-ray diffraction and finally the development of structureperformance dependencies by measuring of the charge carrier mobilities of the derivatives in thin film transistors. The two main-goals of this thesis were achieved. Well soluble acene derivatives for spin-coated TFTs were obtained, showing charge carrier mobilities in the range of polymer p-type materials. Novel core-fluorinated perylene bisimide dyes were synthesized particularly and the use of electron deficient substituents lead to PBIs with outstanding air-stable mobilities in thin film transistors prepared by vacuum deposition techniques. The relationship between performance, air stability and solid state packing was elucidated in detail by single crystal X-ray diffraction analysis.}, subject = {D{\"u}nnschichttransistor}, language = {en} }