@article{WaagHeinkeScholletal.1993,
  author    = {Waag, A. and Heinke, H. and Scholl, S. and Becker, Charles R. and Landwehr, G.},
  title     = {Growth of MgTe and Cd\(_{1-x}\)Mg\(_x\)Te thin films by molecular beam epitaxy},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37917},
  year      = {1993},
  abstract  = {We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd\(_{l-x}\)Mg, Te by molecular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cd\(_{l_x}\),Mg\(_x\)Te epilayers were grown with a Mg concentration between 0 and 68\%, which corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7\%. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the rather good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range.},
  language  = {en}
}
@article{HerrmannHappMoellmannetal.1993,
  author    = {Herrmann, K. H. and Happ, M. and M{\"o}llmann, K.-P. and Tomm, J. W. and Becker, Charles R. and Kraus, M. M. and Yuan, S. and Landwehr, G.},
  title     = {A new model for the absorption coefficient of narrow gap (Hg,Cd)Te that simultaneously considers band tails and band filling},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37894},
  year      = {1993},
  abstract  = {A semiempirical model is presented that correlates the broadening of the absorption edge with both transitions below the energy gap and with transitions by the Kane band model. This model correctly fits both the absorption and luminescence spectra of narrow-gap (Hg,Cd)Te samples that have been grown by the traveling heater method as well as by molecular-beam epitaxy. The accuracy of the band-gap determination is enhanced by this model.},
  language  = {en}
}