@article{LaihoPresslSchlageretal.2016,
  author    = {Laiho, K. and Pressl, B. and Schlager, A. and Suchomel, H. and Kamp, M. and H{\"o}fling, S. and Schneider, C. and Weihs, G.},
  title     = {Uncovering dispersion properties in semiconductor waveguides to study photon-pair generation},
  series = {Nanotechnology},
  volume    = {27},
  journal   = {Nanotechnology},
  number    = {43},
  doi       = {10.1088/0957-4484/27/43/434003},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-187025},
  pages     = {434003},
  year      = {2016},
  abstract  = {We investigate the dispersion properties of ridge Bragg-reflection waveguides to deduce their phasematching characteristics. These are crucial for exploiting them as sources of parametric down-conversion (PDC). In order to estimate the phasematching bandwidth we first determine the group refractive indices of the interacting modes via Fabry-Perot experiments in two distant wavelength regions. Second, by measuring the spectra of the emitted PDC photons, we gain access to their group index dispersion. Our results offer a simple approach for determining the PDC process parameters in the spectral domain, and provide important feedback for designing such sources, especially in the broadband case.},
  language  = {en}
}
@article{MotykaDyksikRyczkoetal.2016,
  author    = {Motyka, M. and Dyksik, M. and Ryczko, K. and Weih, R. and Dallner, M. and H{\"o}fling, S. and Kamp, M. and Sęk, G. and Misiewicz, J.},
  title     = {Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing},
  series = {Applied Physics Letters},
  volume    = {108},
  journal   = {Applied Physics Letters},
  number    = {10},
  doi       = {10.1063/1.4943193},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-189795},
  year      = {2016},
  abstract  = {Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.},
  language  = {en}
}
@article{DyksikMotykaKurkaetal.2016,
  author    = {Dyksik, M. and Motyka, M. and Kurka, M. and Ryczo, K. and Dallner, M. and H{\"o}fling, S. and Kamp, M. and Sęk, G. and Misiwicz, J.},
  title     = {Photoluminescence quenching mechanisms in type IIInAs/GaInSb QWs on InAs substrates},
  series = {Optical and Quantum Electronics},
  volume    = {48},
  journal   = {Optical and Quantum Electronics},
  number    = {401},
  doi       = {10.1007/s11082-016-0667-y},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-204672},
  year      = {2016},
  abstract  = {Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.},
  language  = {en}
}
@article{EstrechoGaoBrodbecketal.2016,
  author    = {Estrecho, E. and Gao, T. and Brodbeck, S. and Kamp, M. and Schneider, C. and H{\"o}fling, S. and Truscott, A. G. and Ostrovskaya, E. A.},
  title     = {Visualising Berry phase and diabolical points in a quantum exciton-polariton billiard},
  series = {Scientific Reports},
  volume    = {6},
  journal   = {Scientific Reports},
  number    = {37653},
  doi       = {10.1038/srep37653},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-167496},
  year      = {2016},
  abstract  = {Diabolical points (spectral degeneracies) can naturally occur in spectra of two-dimensional quantum systems and classical wave resonators due to simple symmetries. Geometric Berry phase is associated with these spectral degeneracies. Here, we demonstrate a diabolical point and the corresponding Berry phase in the spectrum of hybrid light-matter quasiparticles—exciton-polaritons in semiconductor microcavities. It is well known that sufficiently strong optical pumping can drive exciton-polaritons to quantum degeneracy, whereby they form a macroscopically populated quantum coherent state similar to a Bose-Einstein condensate. By pumping a microcavity with a spatially structured light beam, we create a two-dimensional quantum billiard for the exciton-polariton condensate and demonstrate a diabolical point in the spectrum of the billiard eigenstates. The fully reconfigurable geometry of the potential walls controlled by the optical pump enables a striking experimental visualization of the Berry phase associated with the diabolical point. The Berry phase is observed and measured by direct imaging of the macroscopic exciton-polariton probability densities.},
  language  = {en}
}