@phdthesis{Albert2012,
  author    = {Albert, Ferdinand},
  title     = {Vertikale und laterale Emissionseigenschaften von Halbleiter-Quantenpunkt-Mikroresonatoren im Regime der schwachen und starken Licht-Materie-Wechselwirkung},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-93016},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2012},
  abstract  = {Die vorliegende Arbeit besch{\"a}ftigt sich mit der Licht-Materie-Wechselwirkung in Quantenpunkt-Mikroresonatoren und deren vertikalen und lateralen Emissionseigenschaften. Quantenpunkte sind nanoskopische Strukturen, in denen die Beweglichkeit der Ladungstr{\"a}ger unterhalb der de-Broglie-Wellenl{\"a}nge eingeschr{\"a}nkt ist, wodurch die elektronische Zustandsdichte diskrete Werte annimmt. Sie werden daher auch als k{\"u}nstliche Atome bezeichnet. Um die Emissionseigenschaften der Quantenpunkte zu modifizieren, werden sie im Rahmen dieser Arbeit als aktive Schicht in Mikros{\"a}ulenresonatoren eingebracht. Diese bestehen aus einer GaAs lambda-Kavit{\"a}t, die zwischen zwei Braggspiegeln aus alternierenden GaAs und AlAs Schichten eingefasst ist. Diese Resonatoren bieten sowohl eine vertikale Emission {\"u}ber Fabry-Perot Moden, als auch eine laterale Emission {\"u}ber Fl� ustergaleriemoden. Die Licht-Materie-Wechselwirkung zwischen den Resonatormoden und lokalisierten Ladungstr{\"a}gern in den Quantenpunkten, genannt Exzitonen, kann in zwei Regime unterteilt werden. Im Regime der starken Kopplung wird der spontane Emissionsprozess in einem Quantenpunkt reversibel und das emittierte Photon kann wieder durch den Quantenpunkt absorbiert werden. Die theoretische Beschreibung der Kopplung eines Exzitons an die Resonatormode erfolgt {\"u}ber das Jaynes-Cummings Modell und kann im Tavis-Cummings Modell auf mehrere Emitter erweitert werden. Ist die D{\"a}mpfung des Systems zu gross, so befindet man sich im Regime der schwachen Kopplung, in dem die Emissionsrate des Quantenpunkts durch den Purcell-Effekt erh{\"o}ht werden kann. In diesem Regime k{\"o}nnen Mikrolaser mit hohen Einkopplungsraten der spontanen Emission in die Resonatormode und niedrigen Schwellpumpstr{\"o}men realisiert werden. Zur Charakterisierung der Proben werden vor allem die Methoden der Mikro-Elektrolumineszenz und der Photonenkorrelationsmessungen eingesetzt.},
  subject      = {Drei-F{\"u}nf-Halbleiter},
  language  = {de}
}
@phdthesis{AlBaidhani2018,
  author    = {Al-Baidhani, Mohammed},
  title     = {Spectroscopy as a tool to investigate the high energy optical properties of nanostructured magnetically doped topological insulator},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-157221},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2018},
  abstract  = {In this dissertation the electronic and high-energy optical properties of thin nanoscale films of the magnetic topological insulator (MTI) (V,Cr)y(BixSb1-x)2-yTe3 are studied by means of X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). Magnetic topological insulators are presently of broad interest as the combination of ferromagnetism and spin-orbit coupling in these materials leads to a new topological phase, the quantum anomalous Hall state (QAHS), with dissipation less conduction channels. Determining and controlling the physical properties of these complex materials is therefore desirable for a fundamental understanding of the QAHS and for their possible application in spintronics. EELS can directly probe the electron energy-loss function of a material from which one can obtain the complex dynamic dielectric function by means of the Kramers-Kronig transformation and the Drude-Lindhard model of plasmon oscillations. The XPS core-level spectra in (V,Cr)y(BixSb1-x)2-yTe3 are analyzed in detail with regards to inelastic background contributions. It is shown that the spectra can be accurately described based on the electron energy-loss function obtained from an independent EELS measurement. This allows for a comprehensive and quantitative analysis of the XPS data, which will facilitate future core-level spectroscopy studies in this class of topological materials. From the EELS data, furthermore, the bulk and surface optical properties were estimated, and compared to ab initio calculations based on density functional theory (DFT) performed in the GW approximation for Sb2Te3. The experimental results show a good agreement with the calculated complex dielectric function and the calculated energy-loss function. The positions of the main plasmon modes reported here are expected to be generally similar in other materials in this class of nanoscale TI films. Hence, the present work introduces EELS as a powerful method to access the high-energy optical properties of TI thin films. Based on the presented results it will be interesting to explore more systematically the effects of stoichiometry, magnetic doping, film thickness and surface morphology on the electron-loss function, potentially leading to a better understanding of the complex interplay of structural, electronic, magnetic and optical properties in MTI nanostructures.},
  subject      = {Topologischer Isolator},
  language  = {en}
}
@phdthesis{Adler2021,
  author    = {Adler, Florian Rudolf},
  title     = {Electronic Correlations in Two-dimensional Triangular Adatom Lattices},
  doi       = {10.25972/OPUS-24175},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-241758},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2021},
  abstract  = {Two-dimensional triangular lattices of group IV adatoms on semiconductor substrates provide a rich playground for the investigation of Mott-Hubbard physics. The possibility to combine various types of adatoms and substrates makes members of this material class versatile model systems to study the influence of correlation strength, band filling and spin-orbit coupling on the electronic structure - both experimentally and with dedicated many-body calculation techniques. The latter predict exotic ground states such as chiral superconductivity or spin liquid behavior for these frustrated lattices, however, experimental confirmation is still lacking. In this work, three different systems, namely the \(\alpha\)-phases of Sn/SiC(0001), Pb/Si(111), and potassium-doped Sn/Si(111) are investigated with scanning tunneling microscopy and photoemission spectroscopy in this regard. The results are potentially relevant for spintronic applications or quantum computing. For the novel group IV triangular lattice Sn/SiC(0001), a combined experimental and theoretical study reveals that the system features surprisingly strong electronic correlations because they are boosted by the substrate through its partly ionic character and weak screening capabilities. Interestingly, the spectral function, measured for the first time via angle-resolved photoemission, does not show any additional superstructure beyond the intrinsic \(\sqrt{3} \times \sqrt{3} R30^{\circ}\) reconstruction, thereby raising curiosity regarding the ground-state spin pattern. For Pb/Si(111), preceding studies have noted a phase transition of the surface reconstruction from \(\sqrt{3} \times \sqrt{3} R30^{\circ}\) to \(3 \times 3\) at 86 K. In this thesis, investigations of the low-temperature phase with high-resolution scanning tunneling microscopy and spectroscopy unveil the formation of a charge-ordered ground state. It is disentangled from a concomitant structural rearrangement which is found to be 2-up/1-down, in contrast to previous predictions. Applying an extended variational cluster approach, a phase diagram of local and nonlocal Coulomb interactions is mapped out. Based on a comparison of theoretical spectral functions with scattering vectors found via quasiparticle interference, Pb/Si(111) is placed in said phase diagram and electronic correlations are found to be the driving force of the charge-ordered state. In order to realize a doped Mott insulator in a frustrated geometry, potassium was evaporated onto the well-known correlated Sn/Si(111) system. Instead of the expected insulator-to-metal transition, scanning tunneling spectroscopy data indicates that the electronic structure of Sn/Si(111) is only affected locally around potassium atoms while a metallization is suppressed. The potassium atoms were found to be adsorbed on empty \(T_4\) sites of the substrate which eventually leads to the formation of two types of K-Sn alloys with a relative potassium content of 1/3 and 1/2, respectively. Complementary measurements of the spectral function via angle-resolved photoemission reveal that the lower Hubbard band of Sn/Si(111) gradually changes its shape upon potassium deposition. Once the tin and potassium portion on the surface are equal, this evolution is complete and the system can be described as a band insulator without the need to include Coulomb interactions.},
  subject      = {Rastertunnelmikroskopie},
  language  = {en}
}