@article{LeeSongHanetal.2015, author = {Lee, Eun-Hye and Song, Jin-Dong and Han, Il-Ki and Chang, Soo-Kyung and Langer, Fabian and H{\"o}fling, Sven and Forchel, Alfred and Kamp, Martin and Kim, Jong-Su}, title = {Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling}, series = {Nanoscale Research Letters}, volume = {10}, journal = {Nanoscale Research Letters}, number = {114}, doi = {10.1186/s11671-015-0826-2}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-143692}, year = {2015}, abstract = {The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.}, language = {en} } @phdthesis{Maier2010, author = {Maier, Florian C.}, title = {Spectromicroscopic characterisation of the formation of complex interfaces}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-65062}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2010}, abstract = {Within the framework of this thesis the mechanisms of growth and reorganisation of surfaces within the first few layers were investigated that are the basis for the fabrication of high quality thin films and interfaces. Two model systems, PTCDA/Ag(111) and CdSe/ZnSe quantum dots (QD), were chosen to study such processes in detail and to demonstrate the power and improvements of the aberration corrected spectromicroscope SMART [1] simultaneously. The measurements benefit especially from the enhanced transmission of the microscope and also from its improved resolution. SMART, the first double-aberration corrected instrument of its kind [2], provided comprehensive methods (LEEM/PEEM, μ-LEED, μ-XPS) to study in-situ and in real time the surface reorganisation and to determine morphology, local structure and local chemical composition of the resulting thin film. Complementarily, a commercial AFM [3] was used ex-situ. XPEEM and μ-XPS measurements were made possible by attaching SMART to the high flux density beamline of the soft-X-ray source BESSY-II [4]. PTCDA/Ag(111) - Growth and structure of the first two layers Although PTCDA/Ag(111) is one of the most intensely studied model systems for the growth of organic semiconductor thin films, it still offers new insights into a complex growth behaviour. This study enlightens the temperature dependant influence of morphological features as small as monatomic Ag steps on the growth process of the first two layers. At low temperatures, single Ag steps act as diffusion barriers. But interdiffusion was observed already for the 2nd layer whereas domain boundaries in the 1st PTCDA-layer persist for crystallite growth in the 2nd layer. 1st layer islands are more compact and the more dendritic development of the 2nd layer indicates reduced interaction strength between 2nd and 1st layer. These findings were explained by a model consisting of structural and potential barriers. The second part of the PTCDA study reveals a variety of phases that appears only if at least two layers are deposited. Besides the six known rotational domains of the interface system PTCDA/Ag(111) [5], a further manifold of structures was discovered. It does not only show a surprising striped image contrast, but the 2nd layer also grows in an elongated way along these so-called 'ripples'. The latter show a rather large period and were found in a wide temperature range. Additionally the μ-LEED pattern of such a domain shows a new super-superstructure as well. This phase is explained by a structural model that introduces a rotated, more relaxed domain in the 2nd layer that does not exist in the first layer. Its structural parameters are similar to those of the bulk unitcells of PTCDA. The model is confirmed by the observation of two different rotational domains that grow on top of one single 'substrate' domain in the 1st layer. The orientations of the ripple phases fit as well to the predictions of the model. The growth direction along the ripples corresponds to the short diagonal of the super-superstructure unitcell with diamond-like shape. CdSe/ZnSe - Inverse structuring by sublimation of an α-Te cap With the second model system the formation of CdSe quantum dots (QD) from strained epi-layers was investigated. In this case the structures do not form during deposition, but rather during sublimation of the so-called 'ignition cap'. For these pilot experiments not only the process of QD formation itself was of interest, but also the portability of the preparation and the prevention of contaminations. It was found that the α-Se is well suited for capping and the last step of the QD preparation, the sublimation of the α-Te cap, needs a sufficiently high rate in rise of temperature. Subsequently the cap, the process of desorption and the final surface with the quantum structures were investigated in detail. The cap was deposited by the MBE-group in W{\"u}rzburg as an amorphous Te layer but was found to contain a variety of structures. Holes, cracks, and micro-crystallites within an α-Te matrix were identified. Sublimation of the "ignition cap" was observed in real-time. Thus the discovered cap-structures could be correlated with the newly formed features as, e.g., QDs on the bare CdSe surface. Since CdSe/ZnSe QDs prefer to form in the neighbourhood of the Te μ-crystallites, Te was found to play a major role in their formation process. Different explanations as the impact of Te as a surfactant, an enhanced mobility of adatoms or as stressor nuclei are discussed. The spectromicroscopic characterisation of the CdSe surface with QDs revealed the crystallographic directions. An increased Cd signal of the film was found at positions of former holes. Several possibilities as segregation or surface termination are reviewed, that might explain this slight Cd variation. Therewith, an important step to a detailed understanding of the complex reorganisation process in coating systems could be achieved.}, subject = {Halbleiterschicht}, language = {en} } @article{SanchezThierschmannMolenkamp2017, author = {S{\´a}nchez, Rafael and Thierschmann, Holger and Molenkamp, Laurens W.}, title = {Single-electron thermal devices coupled to a mesoscopic gate}, series = {New Journal of Physics}, volume = {19}, journal = {New Journal of Physics}, doi = {10.1088/1367-2630/aa8b94}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-172982}, year = {2017}, abstract = {We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations.}, language = {en} } @phdthesis{Dengel2013, author = {Dengel, Radu-Gabriel}, title = {Fabrication of magnetic artificial atoms}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-103162}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2013}, abstract = {This thesis presents the detailed development of the fabrication process and the first observations of artificial magnetic atoms from the II-VI diluted magnetic semiconductor alloy (Zn,Cd,Be,Mn)Se. In order to manufacture the vertical quantum dot device which exhibits artificial atom behavior a number of development steps are conducted. First, the II-VI heterostructure is adjusted for the linear transport regime. Second, state of the art vertical quantum dot fabrication techniques in the III-V material system are investigated regarding their portability to the II-VI heterostructure. And third, new approaches to the fabrication process are developed, taking into account the complexity of the heterostructure and its physical properties. Finally a multi-step fabrication process is presented, which is built up from electron beam and optical lithography, dry and wet etching and insulator deposition. This process allows for the processing of pillars with diameters down to 200 nm with an insulating dielectric and gate. Preliminary transport data on the fabricated vertical quantum dots are presendted confirming the magnetic nature of the resulting artificial atoms.}, subject = {Zwei-Sechs-Halbleiter}, language = {en} } @article{WyborskiPodemskiWrońskietal.2022, author = {Wyborski, Paweł and Podemski, Paweł and Wroński, Piotr Andrzej and Jabeen, Fauzia and H{\"o}fling, Sven and Sęk, Grzegorz}, title = {Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer}, series = {Materials}, volume = {15}, journal = {Materials}, number = {3}, issn = {1996-1944}, doi = {10.3390/ma15031071}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-297037}, year = {2022}, abstract = {We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.}, language = {en} } @article{ThierschmannHenkeKnorretal.2013, author = {Thierschmann, H. and Henke, M. and Knorr, J. and Maier, L. and Heyn, C. and Hansen, W. and Buhmann, H. and Molenkamp, L. W.}, title = {Diffusion thermopower of a serial double quantum dot}, series = {New Journal of Physics}, volume = {15}, journal = {New Journal of Physics}, number = {123010}, doi = {10.1088/1367-2630/15/12/123010}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-129714}, year = {2013}, abstract = {We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference 1T = (20±10)mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.}, language = {en} } @phdthesis{Gross2019, author = {Groß, Heiko}, title = {Controlling Light-Matter Interaction between Localized Surface Plasmons and Quantum Emitters}, doi = {10.25972/OPUS-19209}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-192097}, school = {Universit{\"a}t W{\"u}rzburg}, year = {2019}, abstract = {Metal nanostructures have been known for a long time to exhibit optical resonances via localized surface plasmons. The high electric fields in close proximity to the metal surface have prospects to dramatically change the dynamics of electronic transitions, such as an enhanced spontaneous decay rate of a single emitter. However, there have been two major issues which impede advances in the experimental realization of enhanced light-matter interaction. (i) The fabrication of high-quality resonant structures requires state-of-the-art patterning techniques in combination with superior materials. (ii) The tiny extension of the optical near-field requires precise control of the single emitter with respect to the nanostructure. This work demonstrates a solution to these problems by combining scanning probe and optical confocal microscopy. Here, a novel type of scanning probe is introduced which features a tip composed of the edge of a single crystalline gold sheet. The patterning via focused ion beam milling makes it possible to introduce a plasmonic nanoresonator directly at the apex of the tip. Numerical simulations demonstrate that the optical properties of this kind of scanning probe are ideal to analyze light-matter interaction. Detailed experimental studies investigate the coupling mechanism between a localized plasmon and single colloidal quantum dots by dynamically changing coupling strength via their spatial separation. The results have shown that weak interaction affects the shape of the fluorescence spectrum as well as the polarization. For the best probes it has been found that it is possible to reach the strong coupling regime at the single emitter level at room temperature. The resulting analysis of the experimental data and the proposed theoretical models has revealed the differences between the established far-field coupling and near-field coupling. It has been found that the broad bandwidth of plasmonic resonances are able to establish coherent coupling to multiple transitions simultaneously giving rise to an enhanced effective coupling strength. It has also been found that the current model to numerically calculate the effective mode volume is inaccurate in case of mesoscopic emitters and strong coupling. Finally, light-matter interaction is investigated by the means of a quantum-dot-decorated microtubule which is traversing a localized nearfield by gliding on kinesin proteins. This biological transport mechanism allows the parallel probing of a meta-surface with nm-precision. The results that have been put forward throughout this work have shed new light on the understanding of plasmonic light-matter interaction and might trigger ideas on how to more efficiently combine the power of localized electric fields and novel excitonic materials.}, subject = {Plasmon}, language = {en} }