@phdthesis{Dengel2013,
  author    = {Dengel, Radu-Gabriel},
  title     = {Fabrication of magnetic artificial atoms},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-103162},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2013},
  abstract  = {This thesis presents the detailed development of the fabrication process and the first observations of artificial magnetic atoms from the II-VI diluted magnetic semiconductor alloy (Zn,Cd,Be,Mn)Se. In order to manufacture the vertical quantum dot device which exhibits artificial atom behavior a number of development steps are conducted. First, the II-VI heterostructure is adjusted for the linear transport regime. Second, state of the art vertical quantum dot fabrication techniques in the III-V material system are investigated regarding their portability to the II-VI heterostructure. And third, new approaches to the fabrication process are developed, taking into account the complexity of the heterostructure and its physical properties. Finally a multi-step fabrication process is presented, which is built up from electron beam and optical lithography, dry and wet etching and insulator deposition. This process allows for the processing of pillars with diameters down to 200 nm with an insulating dielectric and gate. Preliminary transport data on the fabricated vertical quantum dots are presendted confirming the magnetic nature of the resulting artificial atoms.},
  subject      = {Zwei-Sechs-Halbleiter},
  language  = {en}
}
@article{ThierschmannHenkeKnorretal.2013,
  author    = {Thierschmann, H. and Henke, M. and Knorr, J. and Maier, L. and Heyn, C. and Hansen, W. and Buhmann, H. and Molenkamp, L. W.},
  title     = {Diffusion thermopower of a serial double quantum dot},
  series = {New Journal of Physics},
  volume    = {15},
  journal   = {New Journal of Physics},
  number    = {123010},
  doi       = {10.1088/1367-2630/15/12/123010},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-129714},
  year      = {2013},
  abstract  = {We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference 1T = (20±10)mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.},
  language  = {en}
}