@article{PeixotoBentmannRuessmannetal.2020,
  author    = {Peixoto, Thiago R. F. and Bentmann, Hendrik and R{\"u}ßmann, Philipp and Tcakaev, Abdul-Vakhab and Winnerlein, Martin and Schreyeck, Steffen and Schatz, Sonja and Vidal, Raphael Crespo and Stier, Fabian and Zabolotnyy, Volodymyr and Green, Robert J. and Min, Chul Hee and Fornari, Celso I. and Maaß, Henriette and Vasili, Hari Babu and Gargiani, Pierluigi and Valvidares, Manuel and Barla, Alessandro and Buck, Jens and Hoesch, Moritz and Diekmann, Florian and Rohlf, Sebastian and Kall{\"a}ne, Matthias and Rossnagel, Kai and Gould, Charles and Brunner, Karl and Bl{\"u}gel, Stefan and Hinkov, Vladimir and Molenkamp, Laurens W. and Friedrich, Reinert},
  title     = {Non-local effect of impurity states on the exchange coupling mechanism in magnetic topological insulators},
  series = {NPJ Quantum Materials},
  volume    = {5},
  journal   = {NPJ Quantum Materials},
  doi       = {10.1038/s41535-020-00288-0},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-230686},
  year      = {2020},
  abstract  = {Since the discovery of the quantum anomalous Hall (QAH) effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)\(_2\)Te\(_3\) and V:(Bi,Sb)\(_2\)Te\(_3\), the search for the magnetic coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic circular dichroism and density functional theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)\(_2\)Te\(_3\). State-of-the-art first-principles calculations find pronounced differences in their 3d densities of states, and show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results explain, in an unified picture, the origins of the observed magnetic properties, and establish the essential role of impurity-state-mediated exchange interactions in the magnetism of MTI.},
  language  = {en}
}
@article{MaassBentmannSeibeletal.2016,
  author    = {Maaß, Henriette and Bentmann, Hendrik and Seibel, Christoph and Tusche, Christian and Eremeev, Sergey V. and Peixoto, Thiago R.F. and Tereshchenko, Oleg E. and Kokh, Konstantin A. and Chulkov, Evgueni V. and Kirschner, J{\"u}rgen and Reinert, Friedrich},
  title     = {Spin-texture inversion in the giant Rashba semiconductor BiTeI},
  series = {Nature Communications},
  volume    = {7},
  journal   = {Nature Communications},
  doi       = {10.1038/ncomms11621},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-173769},
  year      = {2016},
  abstract  = {Semiconductors with strong spin-orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimentally challenging and yet essential for exploiting spin-orbit effects for spin manipulation. Here we employ a state-of-the-art photoelectron momentum microscope with a multichannel spin filter to directly image the spin texture of the layered polar semiconductor BiTeI within the full two-dimensional momentum plane. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the valence and conduction band electrons in BiTeI have spin textures of opposite chirality and of pronounced orbital dependence beyond the standard Rashba model, the latter giving rise to strong optical selection-rule effects on the photoelectron spin polarization. These observations open avenues for spin-texture manipulation by atomic-layer and charge carrier control in polar semiconductors.},
  language  = {en}
}
@article{FiedlerElKarehEremeevetal.2014,
  author    = {Fiedler, Sebastian and El-Kareh, Lydia and Eremeev, Sergey V. and Tereshchenko, Oleg E. and Seibel, Christoph and Lutz, Peter and Kokh, Konstantin A. and Chulkov, Evgueni V. and Kuznetsova, Tatyana V. and Grebennikov, Vladimir I. and Bentmann, Hendrik and Bode, Matthias and Reinert, Friedrich},
  title     = {Defect and structural imperfection effects on the electronic properties of BiTeI surfaces},
  series = {New Journal of Physics},
  volume    = {16},
  journal   = {New Journal of Physics},
  number    = {075013},
  issn      = {1367-2630},
  doi       = {10.1088/1367-2630/16/7/075013},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-119467},
  year      = {2014},
  abstract  = {The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas originating from bulk stacking faults and find a characteristic length scale of ~100 nm for these areas. We show that the two terminations exhibit distinct types of atomic defects in the surface and subsurface layers. For electronic states resided on the I terminations we observe an energy shift depending on the time after cleavage. This aging effect is successfully mimicked by depositon of Cs adatoms found to accumulate on top of the I terminations. As shown theoretically on a microscopic scale, this preferential adsorbing behaviour results from considerably different energetics and surface diffusion lengths at the two terminations. Our investigations provide insight into the importance of structural imperfections as well as intrinsic and extrinsic defects on the electronic properties of BiTeI surfaces and their temporal stability.},
  language  = {en}
}
@article{ElKarehBihlmayerBuchteretal.2014,
  author    = {El-Kareh, Lydia and Bihlmayer, Gustav and Buchter, Arne and Bentmann, Hendrik and Bl{\"u}gel, Stefan and Reinert, Friedrich and Bode, Matthias},
  title     = {A combined experimental and theoretical study of Rashba-split surface states on the ( √3x√3) Pb/Ag (111)R30° surface},
  doi       = {doi:10.1088/1367-2630/16/4/045017},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-112786},
  year      = {2014},
  abstract  = {We report on a combined low-temperature scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) investigation of the ( √3x√3) Pb/Ag (111)R30° surface alloy which provides a giant Rashba-type spin splitting. With STS we observed spectroscopic features that are assigned to two hole-like Rashba-split bands in the unoccupied energy range. By means of STS and quantum interference mapping we determine the band onsets, splitting strengths, and dispersions for both bands. The unambiguous assignment of scattering vectors is achieved by comparison to ARPES measurements. While intra-band scattering is found for both Rashba bands, inter-band scattering is only observed in the occupied energy range. Spin- and orbitally-resolved band structures were obtained by DFT calculations. Considering the scattering between states of different spin- and orbital character, the apparent deviation between experimentally observed scattering events and the theoretically predicted spin polarization could be resolved.},
  language  = {en}
}
@article{BentmannReinert2013,
  author    = {Bentmann, Hendrik and Reinert, Friedrich},
  title     = {Enhancing and reducing the Rashba-splitting at surfaces by adsorbates: Na and Xe on Bi/Cu(111)},
  series = {New Journal of Physics},
  volume    = {15},
  journal   = {New Journal of Physics},
  number    = {115011},
  doi       = {10.1088/1367-2630/15/11/115011},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-129722},
  year      = {2013},
  abstract  = {The surface alloy Bi/Cu(111) shows a paradigmatic free-electron-like surface state with a very large Rashba-type spin-orbit splitting. Using angle-resolved photoemission we investigate how adsorbates of different chemical nature influence the size of the spin splitting in this system. We find that the adsorption of small amounts of monovalent Na atoms leads to an enhancement of the spin splitting while an overlayer of the closed-shell rare gas Xe causes a reduction. The latter result is in contrast to the Au(111) surface for which an increased splitting size after Xe-adsorption was observed. We discuss these experimental findings in terms of the characteristic differences of the surface state wave functions and their spatial deformation in the presence of different types of adsorbates. Our results provide insight into the complex interplay of atomic and interface potential gradients governing the Rashba effect.},
  language  = {en}
}
@phdthesis{Bentmann2012,
  author    = {Bentmann, Hendrik},
  title     = {Spin-Bahn-Kopplung in Grenzschichten: Mikroskopische Zusammenh{\"a}nge und Strategien zur Manipulation},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-76963},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2012},
  abstract  = {Die vorliegende Arbeit befasst sich mit dem Einfluss der Spin-Bahn-Kopplung (SBK) auf die zweidimensionale elektronische Struktur von Festk{\"o}rperoberfl{\"a}chen und -grenzfl{\"a}chen. Aufgrund der strukturellen Inversionsasymmetrie kann die SBK in derartigen Systemen eine Spinaufspaltung der elektronischen Zust{\"a}nde herbeif{\"u}hren und eine charakteristische impulsabh{\"a}ngige Spinstruktur induzieren (Rashba-Effekt). Die Studien in dieser Arbeit sind zum einen darauf gerichtet, das physikalische Verst{\"a}ndnis der mikroskopischen Zusammenh{\"a}nge, die die Spinaufspaltung und die Spinorientierung elektronischer Zust{\"a}nde an Grenzfl{\"a}chen bestimmen, zu verbessern. Des Weiteren sollen M{\"o}glichkeiten zur Manipulation der SBK durch kontrollierte Variationen chemischer und struktureller Grenzfl{\"a}chenparameter erforscht werden. Als Modellsysteme f{\"u}r diese Fragestellungen dienen die isostrukturellen Oberfl{\"a}chenlegierungen BiCu2 und BiAg2, deren elektronische Struktur mittels winkelaufgel{\"o}ster Photoelektronenspektroskopie (ARPES) und spinaufgel{\"o}ster ARPES untersucht wird. Die Resultate der Experimente werden mithilfe von ab initio-Rechnungen und einfacheren Modellbetrachtungen interpretiert. Die Arbeit schließt mit einer ausblickenden Pr{\"a}sentation von Experimenten zu dem topologischen Isolator Bi2Se3(0001). Vergleichende ARPES-Messungen zu BiAg2/Ag(111) und BiCu2/Cu(111) zeigen, dass bereits geringe Unterschiede in der Grenzschichtmorphologie die Gr{\"o}ße der Spinaufspaltung in der elektronischen Struktur um ein Vielfaches ver{\"a}ndern k{\"o}nnen. Zudem belegen spinaufgel{\"o}ste Experimente eine invertierte Spinorientierung der elektronischen Zust{\"a}nde in BiCu2 im Vergleich mit dem Referenzsystem Au(111). Beide Resultate k{\"o}nnen durch eine theoretische Analyse des Potentialprofils und der elektronischen Ladungsverteilung senkrecht zu der Grenzfl{\"a}che in Kombination mit einfachen Modellbetrachtungen verstanden werden. Es stellt sich heraus, dass Asymmetrien in der Ladungsverteilung das direkte mikroskopische Bindeglied zwischen der Spinstruktur des elektronischen Systems und den strukturellen und chemischen Parametern der Grenzschicht bilden. Weitergehende ARPES-Experimente zeigen, dass die spinabh{\"a}ngige elektronische Struktur zudem signifikant durch die Symmetrie des Potentials parallel zu der Grenzfl{\"a}chenebene beeinflusst wird. Eine Manipulation der SBK wird in BiCu2 durch die Deposition von Adatomen erreicht. Hierdurch gelingt es, die Spinaufspaltung sowohl zu vergr{\"o}ßern (Na-Adsorption) als auch zu verringern (Xe-Adsorption). ARPES-Experimente an dem tern{\"a}ren Schichtsystem BiAg2/Ag/Au(111) belegen erstmalig eine Kopplung zwischen elektronischen B{\"a}ndern mit entgegengesetztem Spincharakter in einem zweidimensionalen System mit Spinaufspaltung (Interband-Spin-Bahn-Kopplung). Der zugrundeliegende Kopplungsmechanismus steht in bemerkenswerter Analogie zu den Auswirkungen der SBK auf die spinpolarisierte elektronische Struktur in ferromagnetischen Systemen. Variationen in der Schichtdicke des Ag-Substratfilms erlauben es, die St{\"a}rke der Interband-SBK zu manipulieren.},
  subject      = {Spin-Bahn-Wechselwirkung},
  language  = {de}
}