@article{DyksikMotykaSęketal.2015,
  author    = {Dyksik, Mateusz and Motyka, Marcin and Sęk, Grzegorz and Misiewicz, Jan and Dallner, Matthias and Weih, Robert and Kamp, Martin and H{\"o}fling, Sven},
  title     = {Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range},
  series = {Nanoscale Research Letters},
  volume    = {10},
  journal   = {Nanoscale Research Letters},
  number    = {402},
  doi       = {10.1186/s11671-015-1104-z},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-139733},
  year      = {2015},
  abstract  = {The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.},
  language  = {en}
}