@article{SchikoraHausleitnerEinfeldtetal.1994,
  author    = {Schikora, D. and Hausleitner, H. and Einfeldt, S. and Becker, Charles R. and Widmer, T. and Giftige, C. and Lischka, K. and von Ortenburg, M. and Landwehr, G.},
  title     = {Epitaxial overgrowth of II-VI compounds on patterned substrates},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37985},
  year      = {1994},
  abstract  = {The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes.},
  language  = {en}
}
@article{EinfeldtHeinkeBehringeretal.1994,
  author    = {Einfeldt, S. and Heinke, H. and Behringer, M. and Becker, Charles R. and Kurtz, E. and Hommel, D. and Landwehr, G.},
  title     = {The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-38001},
  year      = {1994},
  abstract  = {The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.},
  language  = {en}
}
@inproceedings{BoegeSchaeferShanjiaetal.1994,
  author    = {Boege, P. and Sch{\"a}fer, H. and Shanjia, Xu and Xinzhang, Wu and Einfeldt, S. and Becker, Charles R. and Hommel, D. and Geick, R.},
  title     = {Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37763},
  year      = {1994},
  abstract  = {Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.},
  subject      = {Millimeterwelle},
  language  = {en}
}