@article{LeeSongHanetal.2015,
  author    = {Lee, Eun-Hye and Song, Jin-Dong and Han, Il-Ki and Chang, Soo-Kyung and Langer, Fabian and H{\"o}fling, Sven and Forchel, Alfred and Kamp, Martin and Kim, Jong-Su},
  title     = {Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling},
  series = {Nanoscale Research Letters},
  volume    = {10},
  journal   = {Nanoscale Research Letters},
  number    = {114},
  doi       = {10.1186/s11671-015-0826-2},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-143692},
  year      = {2015},
  abstract  = {The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.},
  language  = {en}
}