@article{CzerniukBrueggemannTepperetal.2014,
  author    = {Czerniuk, T. and Br{\"u}ggemann, C. and Tepper, J. and Brodbeck, S. and Schneider, C. and Kamp, M. and H{\"o}fling, S. and Glavin, B. A. and Yakovlev, D. R. and Akimov, A. V. and Bayer, M.},
  title     = {Lasing from active optomechanical resonators},
  series = {Nature Communications},
  volume    = {5},
  journal   = {Nature Communications},
  doi       = {10.1038/ncomms5038},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-121559},
  pages     = {4038},
  year      = {2014},
  abstract  = {Planar microcavities with distributed Bragg reflectors (DBRs) host, besides confined optical modes, also mechanical resonances due to stop bands in the phonon dispersion relation of the DBRs. These resonances have frequencies in the 10- to 100-GHz range, depending on the resonator's optical wavelength, with quality factors exceeding 1,000. The interaction of photons and phonons in such optomechanical systems can be drastically enhanced, opening a new route towards the manipulation of light. Here we implemented active semiconducting layers into the microcavity to obtain a vertical-cavity surface-emitting laser (VCSEL). Thereby, three resonant excitations--photons, phonons and electrons--can interact strongly with each other providing modulation of the VCSEL laser emission: a picosecond strain pulse injected into the VCSEL excites long-living mechanical resonances therein. As a result, modulation of the lasing intensity at frequencies up to 40 GHz is observed. From these findings, prospective applications of active optomechanical resonators integrated into nanophotonic circuits may emerge.},
  language  = {en}
}
@article{BraunSchneiderMaieretal.2014,
  author    = {Braun, T. and Schneider, C. and Maier, S. and Igusa, R. and Iwamoto, S. and Forchel, A. and H{\"o}fling, S. and Arakawa, Y. and Kamp, M.},
  title     = {Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots},
  series = {AIP Advances},
  volume    = {4},
  journal   = {AIP Advances},
  number    = {9},
  issn      = {2158-3226},
  doi       = {10.1063/1.4896284},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-115448},
  year      = {2014},
  abstract  = {In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s).},
  language  = {en}
}