@article{BraunSchneiderMaieretal.2014,
  author    = {Braun, T. and Schneider, C. and Maier, S. and Igusa, R. and Iwamoto, S. and Forchel, A. and H{\"o}fling, S. and Arakawa, Y. and Kamp, M.},
  title     = {Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots},
  series = {AIP Advances},
  volume    = {4},
  journal   = {AIP Advances},
  number    = {9},
  issn      = {2158-3226},
  doi       = {10.1063/1.4896284},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-115448},
  year      = {2014},
  abstract  = {In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s).},
  language  = {en}
}