@article{SyperekAndrzejewskiRudnoRudzińskietal.2017,
  author    = {Syperek, M. and Andrzejewski, J. and Rudno-Rudziński, W. and Maryński, A. and Sȩk, G. and Misiewicz, J. and Reithmaier, J. P. and Somers, A. and H{\"o}fling, S.},
  title     = {The issue of 0D-like ground state isolation in GaAs- and InP-based coupled quantum dots-quantum well systems},
  series = {Journal of Physics: Conference Series},
  volume    = {906},
  journal   = {Journal of Physics: Conference Series},
  number    = {1},
  issn      = {1742-6588},
  doi       = {10.1088/1742-6596/906/1/012019},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-262876},
  year      = {2017},
  abstract  = {The issue of quantum mechanical coupling between a semiconductor quantum dot and a quantum well is studied in two families of GaAs- and InP- based structures at cryogenic temperatures. It is shown that by tuning the quantum well parameters one can strongly disturb the 0D-character of the coupled system ground state, initially located in a dot. The out-coupling of either an electron or a hole state from the quantum dot confining potential is viewed by a significant elongation of the photoluminescence decay time constant. Band structure calculations show that in the GaAs-based coupled system at its ground state a hole remains isolated in the dot, whereas an electron gets delocalized towards the quantum well. The opposite picture is built for the ground state of a coupled system based on InP.},
  language  = {en}
}