@phdthesis{Schmitt2022,
  author    = {Schmitt, Fabian Bernhard},
  title     = {Transport properties of the three-dimensional topological insulator mercury telluride},
  doi       = {10.25972/OPUS-29173},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-291731},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2022},
  abstract  = {The subject of this thesis is the investigation of the transport properties of topological and massive surface states in the three-dimensional topological insulator Hg(Mn)Te. These surface states give rise to a variety of extraordinary transport phenomena, making this material system of great interest for research and technological applications. In this connection, many physical properties of the topological insulator Hg(Mn)Te still require in-depth exploration. The overall aim of this thesis is to analyze the quantum transport of HgTe-based devices ranging from hundreds of micrometers (macroscopic) down to a few micrometers in size (microscopic) in order to extend the overall understanding of surface states and the possibilities of their manipulation. In order to exploit the full potential of our high-quality heterostructures, it was necessary to revise and improve the existing lithographic fabrication process of macroscopic three-dimensional Hg(Mn)Te samples. A novel lithographic standard recipe for the fabrication of the HgTe-based macrostructures was developed. This recipe includes the use of an optimized Hall bar design and wet etching instead of etching with high-energy \(\mathrm{{Ar^{+}}}\)-ions, which can damage the samples. Further, a hafnium oxide insulator is applied replacing the SiO\(_{2}\)/Si\(_{3}\)N\(_{4}\) dielectric in order to reduce thermal load. Moreover, the devices are metallized under an alternating angle to avoid discontinuities of the metal layers over the mesa edges. It was revealed that the application of gate-dielectric and top-gate metals results in n-type doping of the devices. This phenomenon could be attributed to quasi-free electrons tunneling from the trap states, which form at the interface cap layer/insulator, through the cap into the active layer. This finding led to the development of a new procedure to characterize wafer materials. It was found that the optimized lithographic processing steps do not unintentionally react chemically with our heterostructures, thus avoiding a degradation of the quality of the Hg(Mn)Te layer. The implementation of new contact structures Ti/Au, In/Ti/Au, and Al/Ti/Au did not result in any improvement compared to the standard structure AuGe/Au. However, a novel sample recipe could be developed, resulting in an intermixing of the contact metals (AuGe and Au) and fingering of metal into the mesa. The extent of the quality of the ohmic contacts obtained through this process has yet to be fully established. This thesis further deals with the lithographic realization of three-dimensional HgTe-based microstructures measuring only a few micrometer in size. Thus, these structures are in the order of the mean free path and the spin relaxation length of topological surface state electrons. A lithographic process was developed enabling the fabrication of nearly any desired microscopic device structure. In this context, two techniques suitable for etching microscopic samples were realized, namely wet etching and the newly established inductively coupled plasma etching. While wet etching was found to preserve the crystal quality of the active layer best, inductively coupled plasma etching is characterized by high reproducibility and excellent structural fidelity. Hence, the etching technique employed depends on the envisaged type of experiment. Magneto-transport measurements were carried out on the macroscopic HgTe-based devices fabricated by means of improved lithographic processing with respect to the transport properties of topological and massive surface states. It was revealed that due to the low charge carrier density present in the leads to the ohmic contacts, these regions can exhibit an insulating behavior at high magnetic fields and extremely low temperatures. As soon as the filling factor of the lowest Landau levels dropped below a critical value (\(\nu_{\mathrm{{c}}}\approx0.8\)), the conductance of the leads decreased significantly. It was demonstrated that the carrier density in the leads can be increased by the growth of modulation doping layers, a back-gate-electrode, light-emitting diode illumination, and by the application of an overlapping top-gate layout. This overlapping top-gate and a back-gate made it possible to manipulate the carrier density of the surface states on both sides of the Hg(Mn)Te layer independently. With this setup, it was identified that topological and massive surface states contribute to transport simultaneously in 3D Hg(Mn)Te. A model could be developed allowing the charge carrier systems populated in the sample to be determined unambiguously. Based on this model, the process of the re-entrant quantum Hall effect observed for the first time in three-dimensional topological insulators could be explained by an interplay of n-type topological and p-type massive surface states. A well-pronounced \(\nu=-1\rightarrow\nu=-2\rightarrow\nu=-1\) sequence of quantum Hall plateaus was found in manganese-doped HgTe-based samples. It is postulated that this is the condensed-matter realization of the parity anomaly in three-dimensional topological insulators. The actual nature of this phenomenon can be the subject of further research. In addition, the measurements have shown that inter-scattering occurs between counter-propagating quantum Hall edge states. The good quantization of the Hall conductance despite this inter-scattering indicates that only the unpaired edge states determine the transport properties of the system as a whole. The underlying inter-scattering mechanism is the topic of a publication in preparation. Furthermore, three-dimensional HgTe-based microstructures shaped like the capital letter "H" were investigated regarding spin transport phenomena. The non-local voltage signals occurring in the measurements could be attributed to a current-induced spin polarization of the topological surface states due to electrons obeying spin-momentum locking. It was shown that the strength of this non-local signal is directly connected to the magnitude of the spin polarization and can be manipulated by the applied top-gate voltage. It was found that in these microstructures, the massive surface and bulk states, unlike the topological surface states, cannot contribute to this spin-associated phenomenon. On the contrary, it was demonstrated that the population of massive states results in a reduction of the spin polarization, either due to the possible inter-scattering of massive and topological surface states or due to the addition of an unpolarized electron background. The evidence of spin transport controllable by a top-gate-electrode makes the three-dimensional material system mercury telluride a promising candidate for further research in the field of spintronics.},
  subject      = {Topologischer Isolator},
  language  = {en}
}
@article{StephanTascilarYalcinMutluetal.2023,
  author    = {Stephan, Marlene and Tascilar, Koray and Yalcin-Mutlu, Melek and Hagen, Melanie and Haschka, Judith and Reiser, Michaela and Hartmann, Fabian and Kleyer, Arnd and Hueber, Axel J. and Manger, Bernhard and Figueiredo, Camille and Cobra, Jayme Fogagnolo and Tony, Hans-Peter and Finzel, Stephanie and Kleinert, Stefan and Wendler, J{\"o}rg and Schuch, Florian and Ronneberger, Monika and Feuchtenberger, Martin and Fleck, Martin and Manger, Karin and Ochs, Wolfgang and Schmitt-Haendle, Matthias and Lorenz, Hannes Martin and N{\"u}sslein, Hubert and Alten, Rieke and Henes, Joerg and Kr{\"u}ger, Klaus and Schett, Georg and Rech, J{\"u}rgen},
  title     = {Physical function of RA patients tapering treatment — a post hoc analysis of the randomized controlled RETRO trial},
  series = {Journal of Clinical Medicine},
  volume    = {12},
  journal   = {Journal of Clinical Medicine},
  number    = {11},
  issn      = {2077-0383},
  doi       = {10.3390/jcm12113723},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-319349},
  year      = {2023},
  abstract  = {Several studies have shown that tapering or stopping disease-modifying anti-rheumatic drugs (DMARDs) in rheumatoid arthritis (RA) patients in sustained remission is feasible. However, tapering/stopping bears the risk of decline in physical function as some patients may relapse and face increased disease activity. Here, we analyzed the impact of tapering or stopping DMARD treatment on the physical function of RA patients. The study was a post hoc analysis of physical functional worsening for 282 patients with RA in sustained remission tapering and stopping DMARD treatment in the prospective randomized RETRO study. HAQ and DAS-28 scores were determined in baseline samples of patients continuing DMARD (arm 1), tapering their dose by 50\% (arm 2), or stopping after tapering (arm 3). Patients were followed over 1 year, and HAQ and DAS-28 scores were evaluated every 3 months. The effect of treatment reduction strategy on functional worsening was assessed in a recurrent-event Cox regression model with a study-group (control, taper, and taper/stop) as the predictor. Two-hundred and eighty-two patients were analyzed. In 58 patients, functional worsening was observed. The incidences suggest a higher probability of functional worsening in patients tapering and/or stopping DMARDs, which is likely due to higher relapse rates in these individuals. At the end of the study, however, functional worsening was similar among the groups. Point estimates and survival curves show that the decline in functionality according to HAQ after tapering or discontinuation of DMARDs in RA patients with stable remission is associated with recurrence, but not with an overall functional decline.},
  language  = {en}
}