@article{SessiBiswasBathonetal.2016,
  author    = {Sessi, Paolo and Biswas, Rudro R. and Bathon, Thomas and Storz, Oliver and Wilfert, Stefan and Barla, Alessandro and Kokh, Konstantin A. and Tereshchenko, Oleg E. and Fauth, Kai and Bode, Matthias and Balatsky, Alexander V.},
  title     = {Dual nature of magnetic dopants and competing trends in topological insulators},
  series = {Nature Communications},
  volume    = {7},
  journal   = {Nature Communications},
  doi       = {10.1038/ncomms12027},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-172704},
  year      = {2016},
  abstract  = {Topological insulators interacting with magnetic impurities have been reported to host several unconventional effects. These phenomena are described within the framework of gapping Dirac quasiparticles due to broken time-reversal symmetry. However, the overwhelming majority of studies demonstrate the presence of a finite density of states near the Dirac point even once topological insulators become magnetic. Here, we map the response of topological states to magnetic impurities at the atomic scale. We demonstrate that magnetic order and gapless states can coexist. We show how this is the result of the delicate balance between two opposite trends, that is, gap opening and emergence of a Dirac node impurity band, both induced by the magnetic dopants. Our results evidence a more intricate and rich scenario with respect to the once generally assumed, showing how different electronic and magnetic states may be generated and controlled in this fascinating class of materials.},
  language  = {en}
}
@article{FiedlerElKarehEremeevetal.2014,
  author    = {Fiedler, Sebastian and El-Kareh, Lydia and Eremeev, Sergey V. and Tereshchenko, Oleg E. and Seibel, Christoph and Lutz, Peter and Kokh, Konstantin A. and Chulkov, Evgueni V. and Kuznetsova, Tatyana V. and Grebennikov, Vladimir I. and Bentmann, Hendrik and Bode, Matthias and Reinert, Friedrich},
  title     = {Defect and structural imperfection effects on the electronic properties of BiTeI surfaces},
  series = {New Journal of Physics},
  volume    = {16},
  journal   = {New Journal of Physics},
  number    = {075013},
  issn      = {1367-2630},
  doi       = {10.1088/1367-2630/16/7/075013},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-119467},
  year      = {2014},
  abstract  = {The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas originating from bulk stacking faults and find a characteristic length scale of ~100 nm for these areas. We show that the two terminations exhibit distinct types of atomic defects in the surface and subsurface layers. For electronic states resided on the I terminations we observe an energy shift depending on the time after cleavage. This aging effect is successfully mimicked by depositon of Cs adatoms found to accumulate on top of the I terminations. As shown theoretically on a microscopic scale, this preferential adsorbing behaviour results from considerably different energetics and surface diffusion lengths at the two terminations. Our investigations provide insight into the importance of structural imperfections as well as intrinsic and extrinsic defects on the electronic properties of BiTeI surfaces and their temporal stability.},
  language  = {en}
}
@article{MaassBentmannSeibeletal.2016,
  author    = {Maaß, Henriette and Bentmann, Hendrik and Seibel, Christoph and Tusche, Christian and Eremeev, Sergey V. and Peixoto, Thiago R.F. and Tereshchenko, Oleg E. and Kokh, Konstantin A. and Chulkov, Evgueni V. and Kirschner, J{\"u}rgen and Reinert, Friedrich},
  title     = {Spin-texture inversion in the giant Rashba semiconductor BiTeI},
  series = {Nature Communications},
  volume    = {7},
  journal   = {Nature Communications},
  doi       = {10.1038/ncomms11621},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-173769},
  year      = {2016},
  abstract  = {Semiconductors with strong spin-orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimentally challenging and yet essential for exploiting spin-orbit effects for spin manipulation. Here we employ a state-of-the-art photoelectron momentum microscope with a multichannel spin filter to directly image the spin texture of the layered polar semiconductor BiTeI within the full two-dimensional momentum plane. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the valence and conduction band electrons in BiTeI have spin textures of opposite chirality and of pronounced orbital dependence beyond the standard Rashba model, the latter giving rise to strong optical selection-rule effects on the photoelectron spin polarization. These observations open avenues for spin-texture manipulation by atomic-layer and charge carrier control in polar semiconductors.},
  language  = {en}
}