3441
1992
eng
article
1
2009-12-07
--
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Contactless measurement of the conductivity of II-VI epitaxial layers by means of the partially filled waveguide method
We report the contactless determination of the conductivity, the mobility and the carrier concentration of II-VI semiconductors by means of the technique of the partially filled waveguide at a microwave frequency of 9 GHz. The samples are CdHgTe epitaxial layers, grown on CdZnTe substrates by molecular beam epitaxy. The conductivity is determined from the transmission coefficient of the sample in the partially filled waveguide. For the analysis of the experimental data, the complex transmission coefficient is calculated by a rigorous multi-mode matching procedure. By varying the conductivity of the sample, we obtain an optimum fit of the calculated data to the experimental results. Comparison with conductivity data determined by the van der Pauw method shows that our method allows to measure the conductivity with good accuracy. The behaviour of the transmission coefficient of the sample is discussed in dependence on the layer conductivity, the layer thickness and the dielectric constant of the substrate. The calculations require to consider in detail the distribution of the electromagnetic fields in the sample region. The usual assumption of a hardly disturbed TE\(_{10}\) mode cannot be used in our case. By applying a magnetic field in extraordinary Voigt configuration. galvanomagnetic measurements have been carried out which yield the mobility and thus the carrier concentration. These results are also in good agreement with van der Pauw transport measurements.
urn:nbn:de:bvb:20-opus-37838
3783
Applied Physics A, Bd. A55, S. 279-288
P. Greiner
L. Polignone
Charles R. Becker
R. Geick
Physik
Conductivity phenomena in semiconductors and insulators (see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves)
III-V and II-VI semiconductors
Microwave and radio-frequency interactions
open_access
Physikalisches Institut
Universität Würzburg
https://opus.bibliothek.uni-wuerzburg.de/files/3441/Becker_Contactless_measurement.pdf
3143
1977
eng
article
1
2009-09-05
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Antiferromagnetic resonance in CoO/NiO mixed crystals
We have studied the lowest magnetic excitation of Ni\(_{1-x}\)Co\(_x\)O mixed crystals for 0.94 \(\leq\) x \(\leq\) 1. Together with previous results for 0.02 \(\leq\) x \(\leq\) 0.07 and neutron data for x = 0.14 and x = 0.30, the results are discussed by means of a model, especially the variation of AFMR frequency and preferred spin direction with Co concentration x.
urn:nbn:de:bvb:20-opus-31239
3123
Physica B (1977) 86-88, S. 1257-1258
G. Geis
R. Geick
Charles R. Becker
V. Wagner
Physik
open_access
Physikalisches Institut
Universität Würzburg
https://opus.bibliothek.uni-wuerzburg.de/files/3143/Becker_Antiferromagnetic_crystals.pdf
2674
1975
eng
article
1
2009-01-08
--
--
Antiferromagnetic Resonance in NiO:Co\(^{2+}\) and NiO:Fe\(^{2+}\)
No abstract available.
urn:nbn:de:bvb:20-opus-30772
3077
phys. stat. sol. (1975) 67, 653-663.
Charles R. Becker
Ph. Lau
R. GEICK
V. Wagner
Physik
open_access
Physikalisches Institut
Universität Würzburg
https://opus.bibliothek.uni-wuerzburg.de/files/2674/Becker_Antiferromagnetic_resonance.pdf
3177
1993
eng
article
1
2009-09-21
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Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps
No abstract available
urn:nbn:de:bvb:20-opus-37964
3796
In : International Journal of Infrared and Millimeter Waves (1993) 14, 10, 2155-2190.
Xu Shanjia
Wu Xinzhang
P. Boege
H. Schäfer
Charles R. Becker
R. Geick
Physik
open_access
Physikalisches Institut
Universität Würzburg
https://opus.bibliothek.uni-wuerzburg.de/files/3177/Becker_Scattering_characteristics.pdf
3178
1992
eng
article
1
2009-09-21
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Microwave transmission and reflection of stratified lossy dielectric segments partially filled waveguide
The microwave transmission and reßection is evaluated for stratified lossy dielectric segments partially filling the rectangular waveguide by the method which combines the multimode network theory with the rigorous mode matching procedure. As an example, we investigate in detail the microwave scattering properties of II-VI-epitaxial layer on a lossy dielectric substrate inserted in the rectangular waveguide. The experimental data verify the accuracy and the effectiveness of the present method. Extensive numerical results are presented to establish useful guidelines for the contactless microwave measurement of the conductivity of the epitaxiallayer.
urn:nbn:de:bvb:20-opus-37958
3795
International Journal of Infrared and Millimeter Waves (1992), 13, 4, 569-587.
Xu Shanjia
Wu Xinzhang
P. Greiner
Charles R. Becker
R. Geick
Physik
open_access
Physikalisches Institut
Universität Würzburg
https://opus.bibliothek.uni-wuerzburg.de/files/3178/Becker_Microwave_transmission.pdf
3187
1994
eng
conferenceobject
1
2009-09-22
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Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method
Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.
urn:nbn:de:bvb:20-opus-37763
3776
In: Millimeter and Submillimeter Waves and Applications : proceedings of the International Conference on Millimeter and Submillimeter Waves and Applications, 10 - 14 January 1994, San Diego, California / Mohammed N. Afsar. - Bellingham u.a. : SPIE, 1994. - ISBN: 0-8194-1515-4. - (SPIE:2211) 649-658
P. Boege
H. Schäfer
Xu Shanjia
Wu Xinzhang
S. Einfeldt
Charles R. Becker
D. Hommel
R. Geick
deu
swd
Millimeterwelle
deu
swd
Kongreß
deu
swd
San Diego <Calif.
deu
swd
1994>
Physik
open_access
Physikalisches Institut
Universität Würzburg
https://opus.bibliothek.uni-wuerzburg.de/files/3187/Becker_conductivity_measurement.pdf
7154
1994
eng
article
1
2013-08-09
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High-order finite-element analysis of scattering properties of II-VI semiconductor materials
The sattering characteristics ot the n-VI semiconductors were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avolds the difficulty of solving the complex transcendental equation introduced in the multimode network method and calculates all the eigenvalues and eigenfunctions simultaneously which are needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and tbe network method. Very good agreement has been achieved, the accuracy and efficiency of the present method are thus verified.
7936
urn:nbn:de:bvb:20-opus-86283
Chinese Journal of Infrared and Millimeter Waves, 1994, 12, 3, 201-209
Deutsches Urheberrecht
Shanjia Xu
Xinqing Sheng
P. Greiner
Charles R. Becker
R. Geick
deu
swd
Halbleiter
eng
uncontrolled
II-VI semiconductor
eng
uncontrolled
scattering characteristics
eng
uncontrolled
high-order finite element
eng
uncontrolled
mode matching method
Physik
open_access
Physikalisches Institut
Universität Würzburg
https://opus.bibliothek.uni-wuerzburg.de/files/7154/Becker_7154.pdf