TY  - JOUR
A1  - Wyborski, Paweł
A1  - Podemski, Paweł
A1  - Wroński, Piotr Andrzej
A1  - Jabeen, Fauzia
A1  - Höfling, Sven
A1  - Sęk, Grzegorz
T1  - Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer
JF  - Materials
N2  - We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.
KW  - molecular beam epitaxy
KW  - quantum dot
KW  - metamorphic buffer layer
KW  - band structure
KW  - photoluminescence
KW  - photoreflectance
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-297037
SN  - 1996-1944
VL  - 15
IS  - 3
ER  -